• Journal of Surface Science and Engineering
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• v.36 no.2
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• pp.200-205
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• 2003

Thermoelectric p-type $Fe_{0.98}$ $Mn_{ 0.02}$$Si_2$ bulk specimens have been produced by mechanical alloying and consolidation by vacuum hot pressing. The subsequent isothermal annealing was not able to fully transform the mestastable as -milled powders into the $\beta$ $-FeSi_2$ phase, so that the obtained matrix consisted of not only thermoelectric semiconducting $\beta$-FeSi$_2$ but also some residual, untransformed metallic $\alpha$ $- Fe_2$$Si_{ 5}$ and $\varepsilon$-FeSi mixtures. Interestingly, $\beta$ - $FeSi_2$ was more easily obtained in the low density specimen when compared to the high density specimen. The oxidation at 700 and $800^{\circ}C$ in air led to the phase transformation of the above described iron - silicides and the formation of a thin silica surface layer.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1724-1726
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• 2000

We have investigated a molecular orientation effect of septithiophene(7T), the conjugated linear septenary of thiophene, on its optical and electrical properties. Vacuum evaporation of septithiophene on a substrate induces a upright orientation. We rubbed the pre-layer to lie down molecules. As a result, we could get a horizontal molecular orientation. Dichroic ratio is about 2 at 418nm from UV/visible absorption spectrum. To investigate the electrical characteristics, we fabricated devices with septithiophene as a semiconducting material. The conductivity with horizontal septithiophene orientation is about one order gloater than that of upright septithiophene.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.49-49
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• 2010

Nanopiezotronics is an emerging area of nanotechnology with a variety of applications that include piezoelectric field-effect transistors and diodes, self-powered nanogenerators and biosystems, and wireless nano/biosensors. By exploiting coupled piezoelectric and semiconducting characteristics, it is possible for nanowires, nanobelts, or nanorods to generate rectifying current and potential under external mechanical energies such as body movement (handling, winding, pushing, and bending) and muscle stretching, vibrations (acoustic and ultrasonic waves), and hydraulic forces (body fluid and blood flow). Fully transparent, flexible (TF) nanogenerators that are operated by external mechanical forces will be presented. By controlling the density of the seed layer for ZnO nanorod growth, transparent ZnO nanorod arrays were grown on ITO/PES films, and a TF conductive electrode was stacked on the ZnO nanorods. The resulting integrated TF nanodevice (having transparency exceeding 70 %) generated a noticeable current when it was pushed by application of an external load. The output current density was clearly dependent on the force applied. Furthermore, the output current density depended strongly on the morphology and the work function of the top electrode. ZnO nanorod-based nanogenerators with a PdAu, ITO, CNT, and graphene top electrodes gave output current densities of approximately $1-10\;uA/cm^2$ at a load of 0.9 kgf. Our results suggest that our TF nanogenerators are suitable for self-powered TF device applications such as flexible self-powered touch sensors, wearable artificial skins, fully rollable display mobile devices, and battery supplements for wearable cellular phones.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.1-490.1
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• 2014

The ZnO nanowire (NW)-based nanogenerators (NGs) can have rectifying current and potential generated by the coupled piezoelectric and semiconducting properties of ZnO by variety of external stimulation such as pushing, bending and stretching. So, ZnO NGs needed to enhance durability for stable properties of NGs. The durability of the metal electrodes used in the typical ZnO nanogenerators(NGs) is unstable for both electrical and mechanical stability. Indium tin oxide (ITO) is used as transparent flexible electrode but because of high cost and limited supply of indium, the fragility and lack of flexibility of ITO layers, alternatives are being sought. It is expected that carbon nanotube and Ag nanowire conductive coatings could be a prospective replacement. In this work, we demonstrated transparent flexible ZnO NGs by using CNT/Ag nanowire hybrid electrode, in which electrical and mechanical stability of top electrode has been improved. We grew vertical type ZnO NW by hydrothermal method and ZnO NW was coated with hybrid silicone coating solution as capping layer to enhance adhesion and durability of ZNW. We coated the CNT/Ag nanowire hybrid electrode by using bar coating system on a capping layer. Power generation of the ZnO NG is measured by using a picoammeter, a oscilloscope and confirmed surface condition with FE-SEM. As a results, the NGs using the CNT/Ag NW hybrid electrode show 75% transparency at wavelength 550 nm and small change of the resistance of the electrode after bending test. It will be discussed the effect of the improved flexibility of top electrode on power generation enhancement of ZnO NGs.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.201-210
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• 2014

The influence of electron irradiation and hydrogen adsorption on the electronic structure of the $SrTiO_3$ (001) surface was investigated by ultraviolet photoemission spectroscopy (UPS). Upon electron irradiation of the surface, UPS revealed an electronic state within the band gap (in-gap state: IGS) with the surface kept at $1{\times}1$. This is considered to originate from oxygen vacancies at the topmost surface formed by electron-stimulated desorption of oxygen. Electron irradiation also caused a downward shift of the valence band maximum indicating downward band-bending and formation of a conductive layer on the surface. With oxygen dosage on the electron-irradiated surface, on the other hand, the IGS intensity was decreased along with upward band-bending, which points to disappearance of the conductive layer. The results indicate that electron irradiation and oxygen dosage allow us to control the surface electronic structure between semiconducting (nearly-vacancy free: NVF) and metallic (oxygen de cient: OD) regimes by changing the density of the oxygen vacancy. When the NVF surface was exposed to atomic hydrogen, in-gap states were induced along with downward band bending. The hydrogen saturation coverage was evaluated to be $3.1{\pm}0.8{\times}10^{14}cm^{-2}$ with nuclear reaction analysis. From the IGS intensity and H coverage, we argue that H is positively charged as $H^{{\sim}0:3+}$ on the NVF surface. On the OD surface, on the other hand, the IGS intensity due to oxygen vacancies was found to decrease to half the initial value with molecular hydrogen dosage. H is expected to be negatively charged as $H^-$ on the OD surface by occupying the oxygen vacancy site.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.37-41
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• 2017

Cuprous oxide ($Cu_2O$) is one of the potential candidates as an absorber layer in ultra-low-cost solar cells. $Cu_2O$ is highly desirable semiconducting oxide material for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and high absorption coefficient that absorbs visible light of wavelength up to 650 nm. In addition, $Cu_2O$ has other several advantages such as non-toxicity, low cost and also can be prepared with simple and cheap methods on large scale. In this work, we deposited the $Cu_2O$ thin films by electrodeposition on gold coated $SiO_2/Si$ wafers. We changed the process conditions such as pH of the solution, applied potential on working electrode, and solution temperature. Finally, we confirmed the structural properties of the thin films by XRD and SEM.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.399-405
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• 2018

We report the fabrication of organic field-effect transistors (OFETs) via spray coating of electrochemically exfoliated graphene (EEG) and conducting polymer hybrid as electrodes. To reduce the roughness and sheet resistance of the EEG electrodes, subsequent coating of conducting polymer (poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)) and acid treatment was performed. After that, active channel layer was developed by spin coating of semiconducting poly(3-hexylthiophene) on the hybrid electrodes to define the bottom gate bottom contact configuration. The OFET devices with the EEG/PEDOT:PSS hybrid electrodes showed a reasonable electrical performances (field effect mobility = $0.15cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^2$, and threshold voltage = -1.57V). Furthermore, the flexible OFET devices based on the Polydimethlsiloxane (PDMS) substrate and ion gel dielectric layer exhibited higher electrical performances (field effect mobility = $6.32cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^3$, and threshold voltage = -1.06V) and excellent electrical stability until 1000 cycles of bending test, which means that the hybrid electrode is applicable to various organic electronic devices, such as flexible OFETs, supercapacitors, organic sensors, and actuators.