• Korean Journal of Materials Research
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• v.28 no.4
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.402-406
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• 2019

Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiN_x thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiN_x thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiN_x film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10^-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiN_x thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiN_x exhibited improved operating lifetime

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.16.1-16.1
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• 2009

We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.186-195
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• 2000

In this paper, partial discharge (PD) measurement was performed to evaluate the quality of the cable joint and termination constructions. The resistive coupling technique for PD detection using resistivity of semiconducting layer of the cable in the accessories, such as joints and terminations. With high frequency PD (HEPD) measurement, an excellent sensitivity below 20pC could be achieved under unshielded condition. The localization of the defects in the accessories could be identified. During heating cycle, PDs were monitored and analyzed. At that time, the PDs were dependent on the temperature of the heating cycle and showed cyclic behaviors, which were attributed to local delamination of the interfaces, between epoxy unit and stress relief cone(SRC) and between SRC and cable, due to the difference of thermal expansion. As a conclusion, HFPD measurement technique was proven to be an effective diagnostic method for qualification of extra high voltage (EHV) cable accessories. With this technique, the optimal design of the components of the accessories could be verified not only in an early stage but also under operating condition. This technique would result in the improvement of the reliability of the EHV cable accessories.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1349_1350
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• 2009

Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.13-18
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• 2000

We have fabricated LB ultra-thin films of maleate system by LB technique and evaluated the deposited status of LB ultra-thin films by I-V characteristics such as capacitance. It was found that the thickness of LB ultra-thin per layer is $27~30[{\AA}]$ by XRD. And, we have known that the conductivity along the horizontal direction of LB ultra-thin films was about $10^{-8}[S/cm]$, it corresponds to the semiconducting materials. Also, the I-V characteristics along the vertical direction of LB ultra-thin films was dominated by Schottky type current, the activation energy obtained by current-temperature characteristics was about 0.84[eV] and the conductivity was about $10^{-14}[S/cm]$, it corresponds to the insulator. And, the anisotropic conduction mechanism of the LB ultra-thin films in vertical direction and horizontal direction is determined by the hydrophilic group and the hydrophobic group in LB ultra-thin films. The above results are applicable to the semiconductor devices such as switching device, which function at the molecular level.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.4
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• pp.14-17
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• 2006

A thin GaN semiconducting film that grows on sapphires due to metalorganic chemical vapor deposition was machined for nanophotonic applications. The thin film had multilayered superlattice structures, including nanoscaled InGaN layers. Eight alternating InGaN/GaN multilayers provided a blue light emission source. Nanoscaled holes, 150 nm in diameter, were patterned on polymethylmethacrylate (PMMA) film using an electron beam lithography system. The PMMA film blocked the etching species. Air holes, 75 nm in diameter, which acted as blue light diffraction sources, were etched on the top GaN layer by an inductively coupled plasma etcher. Hexagonal lattice photonic crystals were fabricated with 230-, 460-, 690-, and 920-nm pitches. The 450-nm wavelength blue light provided the nanodiffraction destructive and constructive interferences phenomena, which were dependent on the pitch of the holes.

• Applied Microscopy
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• v.46 no.1
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• pp.20-26
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• 2016

Our work on $Sc_2O_3-W$ matrix dispenser cathodes had been reviewed in this paper. The cathode with uniform distribution of $Sc_2O_3$ had been obtained using liquid-liquid doping method. The cathode had excellent emission property, i.e., the emission current density in pulse condition could reach over $35A/cm^2$. It was found that the cathode surface was covered by a Ba-Sc-O active substance multilayer with a thickness of about 100 nm, which was different from the monolayer and semiconducting layer in thickness. Furthermore, the observation results displayed that nanoparticles appeared at the growth steps and the surface of tungsten grains of the fully activated cathode. The calculation result indicated that the nanoparticles could cause the increase of local electric field strengths. We proposed the emission model that both the Ba-Sc-O multilayer and the nanoparticles distributing mainly on the growth steps of the W grains contributed to the emission. The future work on this cathode has been discussed.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.200-205
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• 2003

Thermoelectric p-type $Fe_{0.98}$ $Mn_{ 0.02}$$Si_2$ bulk specimens have been produced by mechanical alloying and consolidation by vacuum hot pressing. The subsequent isothermal annealing was not able to fully transform the mestastable as -milled powders into the $\beta$ $-FeSi_2$ phase, so that the obtained matrix consisted of not only thermoelectric semiconducting $\beta$-FeSi$_2$ but also some residual, untransformed metallic $\alpha$ $- Fe_2$$Si_{ 5}$ and $\varepsilon$-FeSi mixtures. Interestingly, $\beta$ - $FeSi_2$ was more easily obtained in the low density specimen when compared to the high density specimen. The oxidation at 700 and $800^{\circ}C$ in air led to the phase transformation of the above described iron - silicides and the formation of a thin silica surface layer.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1724-1726
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• 2000

We have investigated a molecular orientation effect of septithiophene(7T), the conjugated linear septenary of thiophene, on its optical and electrical properties. Vacuum evaporation of septithiophene on a substrate induces a upright orientation. We rubbed the pre-layer to lie down molecules. As a result, we could get a horizontal molecular orientation. Dichroic ratio is about 2 at 418nm from UV/visible absorption spectrum. To investigate the electrical characteristics, we fabricated devices with septithiophene as a semiconducting material. The conductivity with horizontal septithiophene orientation is about one order gloater than that of upright septithiophene.