• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.101-105
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• 2001

For high voltage XLPE power cables, semiconducting layers have been applied to prevent discharge at the interface between conductor and insulation, and/or insulation and external shielding layer. The semiconducting layers may be also effective to release electrical stress in the interface. The property of semiconducting layers are significantly related to the quality and reliability of power cables. Generally, these semiconducting layers are formed by extruding, the conductibility of the material is given by the carbon black mixed with base polymer. The life of power cables is depended on the smoothness of the interface between insulation and semiconducting layer. If the smoothness is no good, the life of power cables is shorter because the electrical stress and water tree is increased. The causes of no good smoothness are the void of the interface, the protrusions, the contaminants and impurities of the semiconducting layer. The selection and dispersion of the Carbon Black is the significant factor to determine the life of power cable in the manufacturing of semiconducting compound.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.875-877
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• 2007

Zinc tin oxide (ZTO) sol-gel solution was synthesized for ink-jet printable semiconducting ink. Bottom-contact type TFT was produced by printing the ZTO layer between the source and drain electrodes. The transistor involving the ink-jet printed ZTO had the $mobility\;{\sim}\;0.01\;cm^2V^{-1}s^{-1}$. We demonstrated the direct-writing of semiconducting oxide for solution processed TFT fabrication.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.25-29
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• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.868-872
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• 2006

In this work, the effects of the corona treatment on surface properties of semiconducting silicone rubber were investigated in terms of contact angles, ATR-FTIR(Attenuated total reflection fourier transform infrared spectroscopy) and XPS(X-ray photoelectron spectroscopy). And the adhesive characteristics were studied by measuring the T-peel strengths. Based on chemical analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and C-OH on semiconducting silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiOx,\;x=3{\sim}4$. The Corona treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.73.1-76
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• 2000

The performance of insulate materials gets worse with stress time in power system and because this causes lowering of function and accidents in equipment, development and performance improvement of excellent insulate materials are needed to make stable system. In this paper, to study the influence of degradation in XLPE, inner semiconducting layer and outer semiconducting layer, we studied dielectric characteristics at temperature 25~10$0^{\circ}C$ and frequency 20~1[MHz].

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.907-918
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• 2006

In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data was conducted. As the result it was shown that the equivalent circuit model considered the grain-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the characteristics of varistor. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.74-75
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• 2006

In organic opto-electronic applications, such as light emitting diodes (LEDs) and photovoltaic devices (PVDs), the morphology of the active layer is of crucial importance. To control the morphology of the active layer the self-assembling properties of block copolymers was used. Several rod-coil semiconducting diblock copolymers consisting of a conjugated block and a second coil block functionalized with electron transporting and/or accepting materials (such as $C_{60}$) were synthesized. The conjugated block acting as light absorbing, electron donating and hole transporting material. The donor/acceptor photovoltaic devices performance with active layer the above mentioned semiconducting block copolymers will be presented.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1797-1800
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• 1996

In this study, the insulation selected in degra-dated-power cable has been observed and aging process about the insulation has been investigated. Most Insulation aging process initiates in the interface of semiconducting layer and the type of the process is the fractal form that was observed between the the semiconducting layer and insulation layer. It is possible to estimate degree of the degration of cable with breakdown test and obtained data have been used to get parameters in order to use Weibull distribution. With this method it is considered to be possible to estimate situation of degration and life prediction.