• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.99-104
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• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• Journal of Powder Materials
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• v.29 no.5
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• pp.376-381
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• 2022

Tungsten disulfide (WS₂) nanosheets have attracted considerable attention because of their unique optical and electrical properties. Several methods for fabrication of WS₂ nanosheets have been developed. However, methods for mass production of high-quality WS₂ nanosheets remain challenging. In this study, WS₂ nanosheets were fabricated using mechano-chemical ball milling based on the synergetic effects of chemical intercalation and mechanical exfoliation. The ball-milling time was set as a variable for the optimized fabricating process of WS₂ nanosheets. Under the optimized conditions, the WS₂ nanosheets had lateral sizes of 500-600 nm with either a monolayer or bilayer. They also exhibited high crystallinity in the 2H semiconducting phase. Thus, the proposed method can be applied to the exfoliation of other transition metal dichalcogenides using suitable chemical intercalants. It can also be used with high-performance WS₂-based photodiodes and transistors used in practical semiconductor applications.

• Electronics and Telecommunications Trends
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• v.38 no.1
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• pp.17-25
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• 2023

Topological insulators (TIs) emerge as one of the most fascinating and amazing material in physics and electronics. TIs intrinsically possess both gapless conducting surface and insulating internal properties, instead of being only one property such as conducting, semiconducting, and insulating. The conducting surface state of TIs is the consequence of band inversion induced by strong spin-orbit coupling. Combined with broken inversion symmetry, the surface electronic band structure consists of spin helical Dirac cone, which allows spin of carriers governed by the direction of its momentum, and prohibits backscattering of the carriers. It is called by topological surface states (TSS). In this paper, we investigated the TIs materials and their unique properties and denoted the fabrication method of TIs such as deposition and exfoliation techniques. Since it is hard to observe the TSS, we introduced several specialized analysis tools such as angle-resolved photoemission spectroscopy, spin-momentum locking, and weak antilocalization. Finally, we reviewed the various fields to utilize the unique properties of TIs and summarized research trends of their applications.

• Progress in Superconductivity and Cryogenics
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• v.25 no.4
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• pp.10-13
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• 2023

To confirm the room-temperature superconductivity at ambient pressure as claimed in recent arXiv preprints by Lee et al., we followed the original authors' systematic solid-state synthesis recipe to reproduce Cu-doped Pb-apatite, known as LK-99. Using X-ray diffraction and Raman spectroscopy, we identified inclusion of various impurities alongside the apatite phase in our sample. While the sample exhibited an overall semiconducting behavior in electrical transport, an intriguing resistivity anomaly at 380 K was observed, possibly originating from a structural phase transition of the Cu_2-δS impurity. Based on the transport and magnetization measurements, we conclude that the sample is a non-magnetic semiconductor, with absence of superconductivity.

• Analytical Science and Technology
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• v.37 no.1
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• pp.39-46
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• 2024

Alizarin dye, a persistent and hazardous contaminant in aquatic environments, presents a pressing environmental concern. In the quest for efficient removal methods, adsorption has emerged as a versatile and sustainable approach. This study focuses on the development and application of Zinc Oxide/Nickel Oxide (ZnO/NiO) nano-composites as adsorbents for alizarin dye removal. These semiconducting metal oxide nano-composites exhibit synergistic properties, offering enhanced adsorption capabilities. Key parameters affecting alizarin removal, such as contact time, adsorbent dosage, pH, and temperature, were systematically investigated. Notably, the ZnO/NiO nano-composite demonstrated superior performance, with a maximum alizarin removal percentage of 76.9 % at pH 6. The adsorption process followed a monolayer pattern, as suggested by the Langmuir model. The pseudo-second-order kinetics model provided a good fit to the experimental data. Thermodynamic analysis indicated that the process is endothermic and thermodynamically favorable. These findings underscore the potential of ZnO/NiO nano-composites as effective and sustainable adsorbents for alizarin dye removal, with promising applications in wastewater treatment and environmental remediation.

• Korean Journal of Materials Research
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• v.18 no.12
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• pp.655-659
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• 2008

The NO gas sensing properties of ZnO-carbon nanotube (ZnO-CNT) composites fabricated by the coaxial coating of single-walled CNTs with ZnO were investigated using pulsed laser deposition. Upon examination, the morphology and crystallinity of the ZnO-CNT composites showed that CNTs were uniformly coated with polycrystalline ZnO with a grain size as small as 5-10 nm. Gas sensing measurements clearly indicated a remarkable enhancement of the sensitivity of ZnO-CNT composites for NO gas compared to that of ZnO films while maintaining the strong sensing stability of the composites, properties that CNT-based sensing materials do not have. The enhanced gas sensing properties of the ZnO-CNT composites are attributed to an increase in the surface adsorption area of the ZnO layer via the coating by CNTs of a high surface-to-volume ratio structure. These results suggest that the ZnO-CNT composite is a promising template for novel solid-state semiconducting gas sensors.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1068-1073
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• 2001

An n-type iron$silicide(Fe_{0.98}Co_{0.02}Si_2)$has been produced by mechanical alloying process and consolidated by vacuum hot pressing. Although as-milled powders after 120 hours of milling did not show an alloying progress,${\beta}-FeSi_2$phase transformation was induced by isothermal annealing at$830{\circ}C$for 1 hour, and the fully transformed${\beta}-FeSi_2$phase was obtained after 4 hours of annealing. Near fully dense specimen was obtained after vacuum hot pressing at$ 1100{\circ}C$with a stress of 60MPa. However, as-consolidated iron silicides were consisted of untransformed mixture of ${\Alpha}-Fe_2Si_5$and ${\varepsilon-FeSi$phases. Thus, isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting${\beta}-FeSi_2$phase. The condition for${\beta}-FeSi_2$transformation was investigated by utilizing DTA, SEM, and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at$830{\circ}C$and the transformation behaviour was investigated as a function of annealing time. The mechanical properties of${\beta}-FeSi_2$materials before and after isothermal annealing were characterized in this study.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• Korean Chemical Engineering Research
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• v.50 no.4
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• pp.729-732
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• 2012

Herein we report the in-situ synthesis and direct decoration of chalcogenide naoparticles (NPs) onto multiwalled carbon nanotubes (MWCNTs) through an ionic liquid-assisted sonochemical method (ILASM). The as-obtained MWCNT/$BMimBF_4$/CdTe, MWCNT/$BMimBF_4$/ZnTe and MWCNT/$BMimBF_4$/ZnSe nanocomposites were characterized by TEM images and EDS spectra. In particular, the morphologies of nanocomposites such as bump-like, rough, and smooth core-shell structures were strongly influenced by the type of precursors and the interactions with MWCNT. This synthetic strategy opens a new way to directly synthesize and deposit semiconducting NPs (s-NPs) onto CNTs, which consist of binary components obtained from two precursors with different reaction rates.

• Journal of the Korean Chemical Society
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• v.59 no.3
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• pp.215-224
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• 2015

Unsymmetrical tetradentate Schiff base N-(2-hydroxy-5-methylacetophenone)-N'-(2-hydroxy acetophenone) ethylene diamine (H₂L) and its complexes with Cr(III), Mn(II), Fe(III), Co(II), Ni(II) and Cu(II) have been synthesized and characterized by elemental analyses, magnetic susceptibility measurements, IR, electronic spectra and thermogravimetric analyses. ¹H, ¹³C-NMR and FAB Mass spectra of ligand clearly indicate the presence of OH and azomethine groups. Elemental analyses of the complexes indicate that the metal to ligand ratio is 1:1 in all complexes. Infrared spectra of complexes indicate a dibasic quadridentate nature of the ligand and its coordination to metal ions through phenolic oxygen and azomethine nitrogen atoms. The thermal behavior of these complexes showed the loss of lattice water in the first step followed by decomposition of the ligand in subsequent steps. The thermal data have also been analyzed for the kinetic parameters by using Horowitz-Metzger method. The dependence of the electrical conductivity on the temperature has been studied over the temperature range 313-403 K and the complexes are found to show semiconducting behavior. XRD and SEM images of some representative complexes have been recorded. The antimicrobial activity of the ligand and its complexes has been screened against various microorganisms and all of them were found to be active against the test organisms. The Fe(III) and Ni(II) complex have been tested for the catalytic oxidation of styrene.