• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1645-1647
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• 1999

Epoxy compound has been used as insulation material in electrical equipment because of its properties 1) Nowadays, becoming higher voltage system, the properties of interface between epoxy and its metal insert become more important. In this paper, we suggest two types semiconducting paste. One is epoxy type and the other is olephine type. After sprayed the semiconducting paste on metal insert sanded, we procedure the test one is the adhesion strength test, the other is electrical breakdown strength test. So we knew that the epoxy type paste became more higher adhesion strength than olephine type paste because of its homogeneity at the interfaces. And at the breakdown strength test, olephine type paste became less higher than epoxy type paste because of its volatility. So in this study, we suggest the optimum interface condition by adjusting the semiconducting paste and surface roughness.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권11호
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• pp.514-519
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• 2006

To improve the mean-life and the reliability of power cable, we have investigated specific heat (Cp) and thermal conductivity of XLPE insulator and semiconducting materials in 154[kV] underground power transmission cable. Specimens were made of sheet form with the seven of specimens for measurement. Specific heat (Cp) and thermal conductivity were measured by DSC (Differential Scanning Calorimetry) and Nano Flash Diffusivity. Specific-heat measurement temperature ranges of XLPE insulator were from $20[^{\circ}C]\;to\;90[^{\circ}C]$, and the heating rate was $1[^{\circ}C/min]$. And the measurement temperatures of thermal conductivity were $25[^{\circ}C],\;55[^{\circ}C]\;and\;90[^{\circ}C]$. In case of semiconducting materials, the measurement temperature ranges of specific heat were from $20[^{\circ}C]\;to\;60[^{\circ}C]$, and the heating rate was $1[^{\circ}C/min]$. And the measurement temperatures of thermal conductivity were $25[^{\circ}C]\;and\;55[^{\circ}]C$. From these experimental results both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature. We could know that a small amount of CNT has a excellent thermal properties.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권10호
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• pp.443-448
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• 2005

To measure modulus, damping properties and smoothness of semiconducting materials in power cable, we have investigated those of semiconducting materials showed by changing the content of carbon black. Then they were produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[kg/cm$^{2}$]. The content of conductive carbon black was the variable, and their contents were 20, 30 and 40[wt$\%$], respectively. The modulus and tans were measured by DMA 2980. The ranges of measurement temperature were from -50[$^{\circ}C$] to 100[$^{\circ}C$] and measurement frequency was 1[Hz3. The modulus of specimens was increased according to a increment of a carbon black content. And modulus was rapidly decreased at the glass transition temperature. The tans of specimens was decreased according to a increment of a carbon black content. The smoothness was measured by JSM-6400. EEA resin from SEM measurement was best the dispersion of carbon back in base resin.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.868-872
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• 2006

In this work, the effects of the corona treatment on surface properties of semiconducting silicone rubber were investigated in terms of contact angles, ATR-FTIR(Attenuated total reflection fourier transform infrared spectroscopy) and XPS(X-ray photoelectron spectroscopy). And the adhesive characteristics were studied by measuring the T-peel strengths. Based on chemical analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and C-OH on semiconducting silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiOx,\;x=3{\sim}4$. The Corona treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength.

• Journal of Magnetics
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• 제13권3호
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• pp.92-96
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• 2008

There are few reports of high frequency loss behavior in the near-field for magnetic films with semiconducting properties, even though semiconducting magnetic materials, such as soft magnetic amorphous alloys and nanocrystalline thin films, have been demonstrated. The electromagnetic loss behavior of multilayer magnetic films with semiconducting properties on the microstrip line in quasi-microwave frequency band was analyzed numerically using a commercial finite-element based electromagnetic solver. The large increase in the absorption performance and broadband characteristics of the semiconducting/insulating layer magnetic films examined in this study were attributed to an increase in the loss factor of resistive loss. The electromagnetic reflection increased significantly with increasing conductivity, and the loss power deteriorated significantly. The numerical results of the magnetic field distribution showed that a strong radiated signal on the microstrip line was emitted with increasing conductivity and decreasing film thickness due to re-reflection of the radiated wave from the surface of the magnetic film, even though the emitted levels varied with film thickness.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.28-29
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• 2006

To improve Mechanical and Thermal Properties of semiconducting materials in power cable, we have investigated those of semiconducting materials showed by changing the content of carbon black and Carbon Nanotube. Density were measured by EW-200SG. High temperature, heat degradation initiation temperature, and heat weight loss were measured by TGA (Thermogravimetric Analysis). The dimension of measurement temperature was $0[^{\circ}C]$ J to $700[^{\circ}C]$, and rising temperature was $10[^{\circ}C/min]$. Heat degradation initiation temperature from the TGA results was decreased according to increasing the content of Carbon Nanotube. That is, heat stabilities of EVA containing the weak VA (vinyl acetate) against heat was measured the lowest. From the results of the experiment applied in this study, it is evident that a small amount of Carbon nanotube additives significantly improved the Mechanical and Thermal Properties of semiconducting materials.

• 전기학회논문지
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• 제63권5호
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• pp.629-635
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• 2014

This paper describes propagation characteristics obtained by considering semiconducting screen and cross-bonding in underground transmission cables. The semiconducting screen of power cable has effect on propagation characteristics including attenuation, velocity and surge impedance. However, it is very difficult to apply the semiconduction screen for EMTP model because of the number of conductors limitation. Therefore, CIGRE WG 21-05 proposed advanced insulation structure and analysis technique of simplified approach including inner and outer semiconducting screen. In this paper, the various propagation characteristics analyse using this structure and technique for 154kV XLPE $2000mm^2$ cable. The frequency independent model of EMTP CABLE PARAMETER is used for just pattern analysis of propagation characteristics. For exact data analysis, the frequency dependent model of J-marti is used for EMTP modeling. From these result, various propagation characteristics of 154kV XLPE $2000mm^2$ cable according to semi conducting screen consideration, frequency range, cable length and pulse width are analysed. In addition, in this paper, the effects of cross-bonding are also variously discussed according to cross-bonding methods, direct connection and impedance of lead cable.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.6-10
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• 2006

To improve mean-life and reliability of power cable, we have investigated specific heat (Cp) and thermal conductivity of XLPE insulator and semiconducting materials in 154(kV) underground power transmission cable. Specimens were respectively made of sheet form with EVA, EEA and EBA added $30[wt\%],$ carbon black, and the other was made of sheet form by cutting XLPE insulator in 154(kV) power cable. Specific heat (Cp) and thermal conductivity were measured by DSC (Differential Scanning Calorimetry) and Nano Flash Diffusivity. Specific-heat measurement temperature ranges of XLPE insulator were from $20[^{\circ}C]\;to\;90[^{\circ}C],$ and the heating rate was $1[^{\circ}C/mon].$ And the measurement temperatures of thermal conductivity were $25[^{\circ}C],\;55[^{\circ}C]\;and\;90[^{\circ}C].$ In case of semiconducting materials, the measurement temperature ranges of specific heat were from $20[^{\circ}C]\;to\;60[^{\circ}C],$ and the heating rate was $1[^{\circ}C/mon].$ And the measurement temperatures of thermal conductivity were $25[^{\circ}C],\;55[^{\circ}C].$ In addition we measured matrix of semiconducting materials to show formation and growth of carbon black in base resins through the SEM. From these experimental results, both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.160-161
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• 2006

To Improve the mean-life and the reliability of power cable, we have investigated thermal conductivity of XLPE insulator and semiconducting materials in l54[kV] underground power transmission cable. Specimens were made of sheet form with the nine of specimens for measurement. Thermal conductivity were measured by Nano Flash Diffusivity thermal conductivity measurement temperature ranges of XLPE insulator were from 20[$^{\circ}C$] to 90[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/mm]. In case of semiconducting materials. the measurement temperature ranges of thermal conductivity were from 20[$^{\circ}C$] to 60[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min].

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1154-1157
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• 2006

Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using an organic patterning methodology. Laser assisted lift-off (LALO) technique, ablating selectively the hydrophobic layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly (9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFTs fabricated using the LALO technique and is applicable for the larger area display.