• JSTS:Journal of Semiconductor Technology and Science
• /
• 제16권5호
• /
• pp.630-634
• /
• 2016

We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using $sp3d5s^*$ is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional $Schr{\ddot{o}}dinger$-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic ($I_{ON}$ > $100 {\mu}A/{\mu}m$) that broken-gap TFETs normally have.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2001년도 ICCAS
• /
• pp.149.2-149
• /
• 2001

In this paper, we present an agent-based transportation routing method in a semi-conductor production line. The main characteristic of the proposed method is that each AGV agent individually searches candidates of its route with reference of the pheromone information based on the use of an analogy of Ant System. The proposed method is applied to several routing problems. The performances of the proposed method are compared with those of a Genetic Algorithm. The effectiveness of the proposed method is conrmed by many numerical examples. In order to demonstrate the effectiveness of the proposed method for an actual problem, the proposed method is applied to a dynamic motion planning. The proposed method ...

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2011년도 추계학술대회 논문집
• /
• pp.337-342
• /
• 2011

This paper presents the performance of a full vehicle MR suspension system at different tire pressure. The pressure of tire is related to tire stiffness, which is significantly affects the performance of suspension system. Therefore, in this research, the effectiveness of tire pressure on full vehicle MR suspension is evaluated. As a first step, the characteristic of tire with respect to pressure is experimentally tested and modeled. After that, the governing equation of MR damper and full vehicle MR suspension system are derived. The skyhook controller is implemented and the vibration control performance of full vehicle MR suspension is evaluated via simulation with respect to the tire pressure.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 하계학술대회 논문집 A
• /
• pp.237-239
• /
• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 E
• /
• pp.1770-1772
• /
• 1997

In this paper, Voltage-time characteristics of lightning impulse and switching surge breakdown in SF6 is studied on the gap and various pressure. The characteristics is categorized into three pattern depending on the configuration of the gap and gas pressure. The properties of the voltage-time characteristics in these patterns are generalized as semi-empirical formula which will be useful in the quantitation voltage evaluation of insulation coordination and the abnormal voltage protection of SF6 insulated power equipment.

• 대한전자공학회논문지
• /
• 제27권2호
• /
• pp.93-97
• /
• 1990

도핑된 半導體 界面의 界面電荷 近似式과 構造를 提案하였다. III-V族 化合物 半導體인 p-GaP,p-InP,n-GaAs와 $C_sNO_3$ 水性 電解質 界面에서 整流現象은 循環電流-電壓特性으로 定性的 解析을 하였다. 半導體 界面의 電流-電壓 特性曲線, 이온 吸着과 電位障壁 過程은 連續循環電壓方法으로 實證하였다. 도핑된 半導體-電解質 界面에서 pn 또는 np 接合構造와 그에 따른 整流形은 空間電荷에 의하여 決定된다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2000년도 하계학술대회 논문집 B
• /
• pp.1330-1332
• /
• 2000

In general, the expected life of power semiconductor elements is known for semi-permanent, but actual characteristics are changed according to the such environment conditions obviously because of using time or operating condition. Specially, in case of using at the power plant it is very important to sustain reliability for power semiconductor which it affect to stop operating condition as deterioration or break. Therefore, we need to apply maintenance technics to got the reliability which is a prediction method of life cycle. This paper shows the result of the analyzed data for element characteristic and effects used practically and we had developed the effective equipment which for diagnostic the semiconductor performance.

• 대한기계학회논문집B
• /
• 제28권11호
• /
• pp.1359-1367
• /
• 2004

The demand of vacuum pump has been increased in the process of semi-conduct manufacturing, as a core component. The response of the system for vacuum pump performance test can be utilized to assess the system and to obtain the reliability of the apparatus for the test. The system consists of gas supply tank, pressure chamber, measurement chamber and transmission line. Transient analysis for compressible fluid has been conducted to evaluate the dynamic characteristic of the volume terminated transmission line. Numerical approach based on the method of characteristics is used for the analysis. The response is evaluated with the important parameters for the system: i.e., length and diameter of the line, volume of the terminal tank. Using the numerical results, pumping speeds are calculated and then compared to the experimental results.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
• /
• pp.584-584
• /
• 2000

Electronic structures of ordered Fe$_3X (X = Al, Si), and their derivative ternary alloys of Fe_2TX (T = 3d transition metal) have been investigated by using the linearized muffin-tin orbital (LMTO) band method. The role of the coupling between substituted transition metal and its neighbors is investigated by calculating the magnetic moments and local density of states (LDOS). It is shown that it is essential to include the coupling beyond nearest neighbors in obtaining the magnetic moment of Fe alloy. The preferential sites of T impurities in Fe_3X are determined from the total energy calculations. The derivative ternary alloys of Fe_2TX have characteristic electronic structures of semi-metal for Fe_2VAI and (nearly) half-metal for Fe_2TAI (T = Cr, Mn) and Fe_2TSi (T = V, Cr, Mn)

• 한국공간구조학회논문집
• /
• 제9권1호
• /
• pp.47-52
• /
• 2009

본 연구는 강진 시 소성화 범위를 최소화하여 장수명 철골구조를 실현하는 구조시스템을 제안하고 지진응답특성을 실증적으로 파악하는 것을 연구목적으로 한다. 이를 위하여, 실대형 1층 철골조 실험체 2개를 설계 및 제작하여 가동적 지진응답실험을 수행하였다. 실험결과에 의하면 본 연구에서 제안한 철골구조시스템은 이력형 강재댐퍼, 보-기둥접합부 순서로 붕괴모드가 발생하였으며 지진응답시간 중 그 외의 주변 프레임은 탄성 상태에 머무르는 것을 확인하였다.