• 한국재료학회지
• /
• 제31권5호
• /
• pp.264-271
• /
• 2021

Porous carbons have been widely used as electrode material for supercapacitors. However, commercial porous carbons, such as activated carbons, have low electrochemical performance. Nitrogen-doping is one of the most promising strategies to improve electrochemical performance of porous carbons. In this study, nitrogen self-doped porous carbon (NPC) is prepared from melamine foam by carbonization to improve the supercapacitive performance. The prepared NPC is characterized in terms of the chemical structures and elements, morphology, pore structures, and electrochemical performance. The results of the N₂ physisorption measurement, X-ray diffraction, and Raman analyses reveal that the prepared NPC has bimodal pore structures and pseudo-graphite structures with nitrogen functionality. The NPC-based electrode exhibits a gravimetric capacitance of 153 F g^-1 at 1 A g^-1, a rate capability of 73.2 % at 10 A g^-1, and an outstanding cycling ability of 97.85 % after 10,000 cycles at 10 A g^-1. Thus, the NPC prepared in this study can be applied as electrode material for high-performance supercapacitors.

• 전기화학회지
• /
• 제13권3호
• /
• pp.211-216
• /
• 2010

전해액 상용성의 boron trifluoride lithium methacrylate ($BF_3$LiMA)를 기본으로 하는 겔 고분자 전해질 (gel polymer electrolytes, GPE)에서 $BF_3$LiMA의 농도가 이온전도도, 전기화학적 안정성에 미치는 영향을 AC impedance 측정법과 linear sweep voltammetry (LSV)를 통하여 평가하였다. 그 결과 $BF_3$LiMA가 4wt% (고분자함량 21 wt%)일 때, 상온 이온전도도가 $5.3{\times}10^{-4}Scm^{-1}$로서 가장 높게 관찰되었으며 4 wt% 전후로 다시 감소하였다. $BF_3$LiMA 기반의 GPE는 음이온이 고정되어 있는 자기-도핑형 계열로서 우수한 전기화학적 안정성을 확인하였다. 한편 $BF_3$LiMA 기반 GPE는 리튬금속과 비교적 불안정한 계면반응성을 보여주었지만 흑연/GPE/흑연, LCO/GPE/LCO에서는 높은 계면안정성을 형성하였다. 따라서 $BF_3$LiMA 기반의 GPE를 통하여 높은 상온 이온전도도와 전기화학적 안정성 및 흑연과 LCO 양극산화물에 대한 우수한 계면특성을 확보할 수 있었다.

• 고려인삼학회:학술대회논문집
• /
• 고려인삼학회 1980년도 학술대회지
• /
• pp.143-150
• /
• 1980

The purpose of this double-blind study was to study the standardized ginseng-extract (marketed form, GINSANA), in regard to its efficacy on the reaction time, pulmonary function and general health in subjects of various age-groups. The trial was conducted as a double-blind study in a total of 120 subjectsm allocated to different groups, according to age (30 to 39 and 40 to 60 year age-groups), sex and preparation administered (ginseng/placebo). The study lasted 12 weeks and the dosage was fixed at 2 capsules per day. The rusults regarding reaction time and pulmonary function showed significant differences in favour of the GINSANA group, over the placebo group, in the 40 to 60-year-old men and women. In the self-evaluation (performance, mood, concentration) we observed a clear improvement (p < 0.001) in the subjects treated with GINSANA, with the exception of the men age 30-39 years. The results botained, which are specially related to reaction, pulmonary function, self evaluation and tolerability, have shown that GINSANA, as standardized ginseng extract, has a favourable effect on the psychic and physical functions studied. 3. Performance test in top sportsmen before and after 9 weeks' treatment with GINSANA To what extent can GINSANA influence physical performance? It is precisely we the physicians whose task it is to find drugs which in physiological amounts do not have any special pharmacodynamic effects. We were therefore interested in the preparation, GINSANA which was made available to us, since it contains a qualitatively and quantitatively standardized GINSENG EXTRACT and is not doping agent.

• 전자공학회논문지A
• /
• 제30A권6호
• /
• pp.38-48
• /
• 1993

A recessed n-p Juction diode with the self-aligned sturcture is proposed and fabricated by using the polysilicon as an n$^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar divice and the n$^{+}$ polysilicone mitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition. As$^{+}$ dose for the doping of the polysilicon and the annealing condition using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS and the electrical characteristics are analyzed in terms of the ideality factor of diode (n), contact resistance and reverse leakage current. In addition, n$^{+}$-p junction diodes are formed by using the amorphous silicon (of combination of amorphous and polysiliocn) instead of polysilicon and their characteristics are compared with those of the standard sample. The As$^{+}$ dose for the formation of good junction is about 1~2${\times}10^{16}cm^{2}$ at given RTA conditions (1100.deg. C, 10sec).

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.261-263
• /
• 1997

6H-SiC single crystals were successfully grown by the self-designed sublimation apparatus and the optimum growth condition was established. The grown SiC crystals were about 33mm in diameter and 10mm in length. Carrier concentration and doping type of undopped 6H-SiC wafer grown by sublimation method were 1016∼1017/㎤ and n-type Crystallinity of grown 6H-SiC wafer was better than of Acheson seed by data of Raman spectroscopy and Double Crystal XRD. We continue to characterize the grown 6H-SiC wafer in more detail and so we will grow the high-quality 6H-SiC single crystal wafer.

• Progress in Superconductivity
• /
• 제11권2호
• /
• pp.112-117
• /
• 2010

We examine phase transition of the spin density wave and $\pi$ phase shifted superconductivity in the Fe pnictide superconductors. The phase diagram is described in the plane of the temperature T and the doping x with the combination of Ginzburg-Landau expansion of the free energy near the multi-critical temperature $T_c$ and the self-consistent numerical iterations of the gap equations. The phase separation or coexistence is determined by computing the 4-th order terms of the free energy which is confirmed by the numerical calculations. We can show the phase coexistence when the spin density wave is incommensurate. And the first order phase transition is observed near the boundary between commensurate and incommensurate spin density wave.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.25-26
• /
• 2009

We design and demonstrate the controlled morphologies of Ag-dpped ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). p-type Ag-doping is ensuired by low temperature photoluminescence (PL) spectrum to find the AoX peak at 3.349 eV. Morphology of grown NWs are controlled by changing the kinetic energy and flux of the ablated particles with adjusting the target - substrate (T-S) distance. The analysis on the resultant NWs is presented.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2009년도 추계학술대회 논문집
• /
• pp.166-169
• /
• 2009

Poly(benzimidazole-co-aniline) (PBIANI), a self-crosslinked, net-structured, proton conducting polymer has been synthesized for the membrane of high temperature proton exchange membrane fuel cells (HT-PEMFC) with improved proton conductivity and mechanical strength. The stress at break (26$\pm$3MPa)and proton conductivity (167 mS cm-1)of the phosphoric acid doped PBIANI (DPBIANI)membrane is much higher than those of other doped polybenzimidazole(PBI) type membranes.

• 분석과학
• /
• 제8권4호
• /
• pp.631-636
• /
• 1995

Electrochemical properties of self-dopable poly(aniline N-butylsulfonate)s in various acidic medium were investigated by spectroelectrochemical techniques. Cyclic voltammetric study showed more than two reversible process of one electron transfer, the potential and peak intensity of which were dependent on the acid concentration and dopant ion. Spectroscopic study at different oxidation level indicated that the electrochromic switching of the poly(aniline N-alkylsulfonate)s film involves structural changes from benzenoid ring to quinoid ring. Spectrocyclic voltammetry together with impedance spectra of the PANBUS film in 0.1 M $LiClO_4$ solution of acetonitrile containing 0.46 M of perchloric acid showed two types of highly conductive states at the intermediate oxidation levels, which can be related to the metallic polaron states doped by two different process.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
• /
• pp.157-158
• /
• 2000

In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.