• Journal of the Optical Society of Korea
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• 제16권3호
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• pp.292-298
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• 2012

The epitaxial layer structures for blue InGaN light emitting diodes have been optimized for high brightness applications with the output power levels exceeding 1000 $W/cm^2$ by using a self-consistent finite element method. The light-current-voltage relationship has been directly estimated from the multiband Hamiltonian for wurtzite crystals. To analyze the efficiency droop at high injection levels, the major nonradiative recombination processes and carrier spillover have also been taken into account. The wall-plug efficiency at high injection levels up to several thousand $A/cm^2$ has been successfully evaluated for various epilayer structures facilitating optimization of the epitaxial structures for desired output power levels.

• Bulletin of the Korean Chemical Society
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• 제14권2호
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• pp.238-243
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• 1993

A self-consistent-field Green's matrix method for the calculation of electronic properties of chemisorbed system is devised and applied to the methanol on copper(110) surface. The method is based on CNDO Hartree-Fock approximation. Contour integration in the complex energy plane is used for an efficient calculation of the charge-density bond-order matrix. The information on each fragment prior to chemisorption is efficiently used and a small number of iterations are needed to reach the self-consistency. The changes of density of states and other quantities of methanol due to chemisorption are consistent with reported experimental results.

• 대한기계학회논문집
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• 제18권7호
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• pp.1697-1704
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• 1994

Elastic wave propagation in discrete random medium studies to predict dynamic effective properties of composite materials containing spherical inclusions. A self-consistent method is proposed which is analogous to the well-known coherent potential approximation. Three conditions that must be satisfied by two effective elastic moduli and effective density are derived for the time without limit of frequency. The derived self-consistency conditions have the physical meaning that the scattering of coherent wave by the constituents in effective medium is vanished on the average. The frequency-dependent complex effective wave speed and coherent attenuation can be obtained by solving the derived self-consistency conditions numerically. The wave speed and attenuation obtained from present theory are shown to be in the better agreements with previous experimental observations than the previous theory.

• 대한전자공학회논문지SD
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• 제39권2호
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• pp.27-38
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• 2002

양자 우물 반도체 소자 모델링에 있어서 양자 우물의 다중 에너지 부준위 각각에 대한 Boltzmann 방정식의 해를 직접적으로 구하는 self-consistent한 방법을 개발하였다 양자 우물의 특성을 고려하여 Schrodinger 방정식과 Poisson 방정식 및 Boltzmann 방정식으로 구성된 양자 우물 소자 모델을 설정하였으며 이들의 직접적인 해를 유한 차분법과 Gummel-type iteration scheme에 의해 구하였다. Si MOSFET의 inversion 영역에 형성되는 양자 우물에 적용하여 그 시뮬레이션 결과로부터 본 방법의 타당성 및 효율성을 보여 주었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1280-1282
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• 1993

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure, using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers, so that it is better suited to explain experimental results. The structure used is an $Al_{0.5}Ga_{0.5}$As/GaAs/$Al_{0.5}Ga_{0.5}As$ single quantum well. In this work, we estimate the theoretical current-voltage characteristics, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers.

• Bulletin of the Korean Chemical Society
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• 제7권6호
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• pp.480-481
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• 1986

• 전자공학회논문지A
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• 제31A권3호
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• pp.46-52
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• 1994

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure. using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers which have not been considered in the flat-band model reported by Esaki. so that it is better suited to explain experimental results. The structure used is an $AL_{0.5}Ga_{0.5}AS/GaAs/Al_{0.5}Ga_{0.5}AS$ single quantum well. In this work. we estimate the theoretical current-voltage characteristics of the same structure, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers sandwiched between the barrier and highly n-doped GaAs contact layer.

• 전자공학회논문지D
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• 제35D권9호
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• pp.87-92
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• 1998

확장된 새로운 층 방법을 이용하여 사다리꼴과 삼각형 형태의 회절격자 구조를 가지는 5층의 DFB 구조 소자의 TM 모드의 결합계수를 계산하였다. TM 모드의 unperturbed 필드 분포를 쉽게 계산하기 위하여 회절격자 영역의 비유전상수의 역수를 종축과 횡축 양 방향으로 평균값을 취하여 새로이 설정하는 층의 비유전상수의 역수가 되도록 설정하였다. 확장된 새로운 층 방법이 TM 모드의 결합계수 계산에도 유용하게 사용될 수 있음을 회절격자 영역의 등분할 층수를 6층까지 늘려가며 self-consistent하게 검증하였다.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1000-1004
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• 1997

In this paper the current-voltage characteristics of a submicron GaAs MESFET is simulated by using the self-consistent ensemble Monte Carlo method. The numerical algorithm employed in solving the two-dimensional Poisson equation is the successive over-relaxation(SOR) method. The total number of employed superparticles is about 1000 and the field adjusting time is 10fs. To obtain the steady-state results the simulation is performed for 10ps at each bias condition. The simulation results show the average electron velocity is modified by the gate voltage.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.397-407
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• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.