• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.508-516
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• 1998

Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.237-242
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• 2018

We report on the fabrication and photoelectrochemical (PEC) properties of a ZnO nanorod array structure as an efficient photoelectrode for hydrogen production from sunlight-driven water splitting. Vertically aligned ZnO nanorods were grown on an indium-tin-oxide-coated glass substrate via seed-mediated hydrothermal synthesis method with the use of a ZnO nanoparticle seed layer, which was formed by thermally oxidizing a sputtered Zn metal thin film. The structural and morphological properties of the synthesized ZnO nanorods were examined using X-ray diffraction and scanning electron microscopy, as well as Raman scattering. The PEC properties of the fabricated ZnO nanorod photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the vertically aligned ZnO nanorod photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., $0.65mA/cm^2$ at 0.8 V vs Ag/AgCl in a 1 mM $Na_2SO_4$ electrolyte. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs Ag/AgCl, which made the device self-powered.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1167-1172
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• 2013

This paper presents a X-band doppler radar with high conversion gain using a self-oscillating-mixer(SOM) that oscillation and frequency mixing is realized at the same time. To improve phase noise of the SOM oscillator, a ${\lambda}/2$ slotted square patch resonator(SSPR) was proposed, which shows high Q-factor of 175.4 and the 50 % reduced circuit area compared to the conventional resonator. To implement the low power system, low biasing voltage of 1.7 V was supplied. To enhance the conversion gain of the SOM, bias circuit is configured near the pinch-off region of transistor, and the conversion gain was optimized. The output power of the proposed SOM was -3.16 dBm at 10.65 GHz. A high conversion gain of 9.48 dB was obtained whereas DC Power consumption is relatively low about 7.65 mW. The phase noise is -90.91 dBc/Hz at 100 kHz offset. The figure-of-merit(FOM) of the proposed SOM was measured as -181.8 dBc/Hz, which is supplier to other SOMs by more than about 7 dB.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.409-412
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• 2002

The LNA(Low Noise Amplifier) is designed for use in low cost commercial application covered fully IMT-2000 band(1920~2170MHz, BW=250MHz). It is optimized source inductance for source lead and designed to equivalent etched line. The LNA uses a high pass impedance matching network for noise match and simple structure. The bias circuit designs have been made self-biased with a negative voltage applied to gate. The power supply voltage is 8V, total current is 180mA. The LNA is biased at a Vgs of -0.4, Vds of 4V for first stage and Vds of 5V for second stage. The LNA is designed competitively for commercial product specification. The measured gain and noise figure of the completed amplifier was 20dB and 1dB, respectively. Also, input VSWR, P1dB and gain flatness was measured of 1.14 ~ l.3dB, 22.4dBm and $\pm$0.45dB, respectively. The designed LNA can be used for commercial product.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.327-335
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• 1993

Using a RF cylindrical magnetron operated with two electromagnets having a Helmholz configuration, RF magnetron plasma properties and characteristics of reactive ion ething of Si were investigated as a function of applied magnetic field strengths using 3mTorr $CF_4/H_2$ and $CHF_3$. Also, I-V characteristics of Schottky diodes, which were made of silicons etched under different applied magnetic field strengths and gas environments, were measured to investigate the degree of radiation damage during the reactive ion etching. As the magnetic field strent;th increased, ion densities and radical densities of the plasmas were increased linearly, however, the dc self-bias voltages induced on the powered electrode, where the specimen are located, were decreased exponentially. Maximum etch rates, which were 5 times faster than that etched without applied magnetic filed, were obtained using near lOOGauss, and, under these conditions, little or no radiation damages on the etched silicons were found.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.2
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• pp.309-316
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• 2019

In this paper, a low-jitter delay-locked loop that compensates for local clock skew is presented. The proposed DLL consists of a phase splitter, a phase detector(PD), a charge pump, a bias generator, a voltage-controlled delay line(VCDL), and a level converter. The VCDL uses self-biased delay cells using current mode logic(CML) to have insensitive characteristics to temperature and supply noises. The phase splitter generates two reference clocks which are used as the differential inputs of the VCDL. The PD uses the only single clock from the phase splitter because the PD in the proposed circuit uses CMOS logic that consumes less power compared to CML. Therefore, the output of the VCDL is also converted to the rail-to-rail signal by the level converter for the PD as well as the local clock distribution circuit. The proposed circuit has been designed with a $0.13-{\mu}m$ CMOS process. A global CLK with a frequency of 1-GHz is externally applied to the circuit. As a result, after about 19 cycles, the proposed DLL is locked at a point that the control voltage is 597.83mV with the jitter of 1.05ps.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1235-1242
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• 2008

In this paper, x-ray image sensor of photon counting type having a $32{\times}32$ pixel array is designed with $0.18{\mu}m$ triple-well CMOS process. Each pixel of the designed image sensor has an area of loot $100{\times}100\;{\mu}m2$ and is composed of about 400 transistors. It has an open pad of an area of $50{\times}50{\mu}m2$ of CSA(charge Sensitive Amplifier) with x-ray detector through a bump bonding. To reduce layout size, self-biased folded cascode CMOS OP amp is used instead of folded cascode OP amp with voltage bias circuit at each single-pixel CSA, and 15-bit LFSR(Linear Feedback Shift Register) counter clock generator is proposed to remove short pulse which occurs from the clock before and after it enters the counting mode. And it is designed that sensor data can be read out of the sensor column by column using a column address decoder to reduce the maximum current of the CMOS x-ray image sensor in the readout mode.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.214-220
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• 2018

We report on the fabrication and photoelectrochemical(PEC) properties of a $Cu_2O$ thin film/ZnO nanorod array oxide p-n heterojunction structure with ZnO nanorods embedded in $Cu_2O$ thin film as an efficient photoelectrode for solar-driven water splitting. A vertically oriented n-type ZnO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film was directly electrodeposited onto the vertically oriented ZnO nanorods array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were characterized using X-ray diffraction and scanning electron microscopy as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/ZnO$ p-n heterojunction photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/ZnO$ photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., $0.77mA/cm^2$ at 0.5 V vs $Hg/HgCl_2$ in a $1mM\;Na_2SO_4$ electrolyte, revealing an effective operation of the oxide heterostructure. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs $Hg/HgCl_2$, which made the device self-powered. The observed PEC performance was attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential, including the light absorption and separation processes of photoinduced charge carriers.