• 제목/요약/키워드: secondary-ion mass spectrometry

검색결과 163건 처리시간 0.027초

Label-free NanoBio Imaging for New Biology and Medical Science

  • Moon, Dae Won
    • Applied Science and Convergence Technology
    • /
    • 제24권6호
    • /
    • pp.203-214
    • /
    • 2015
  • We have been developing a new label-free nanobio imaging platform using non-linear optics such as Coherent Anti-Stokes Raman Spectroscopy (CARS) and ion beam techniques based on sputtering and scattering such as Secondary Ion Mass Spectrometry (SIMS) and Medium Energy Ion Scattering Spectroscopy (MEIS), which have been widely used for atomic and molecular level analysis of semiconductors and nanomaterials. To apply techniques developed for semiconductors and nanomaterials for biomedical applications, the convergence of nano-analysis and biology were tried. Our activities on label-free nanobio imaging during the last decade are summarized in this review about non-linear optical 3D imaging, ellipsometric interface imaging, SIMS imaging, and TOF-MEIS nano analysis for cardiovascular tissues, collagen thin films, peptides on microarray, nanoparticles, and cell adhesion studies and finally the present snapshot of nanobio imaging and the future prospect are described.

고밀도 플라즈마를 이용한 SBT의 식각 특성 (Etching Characteristics of SBT Ihin Film in High Density Plasma)

  • 김동표;이원재;유병곤;김창일
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
    • /
    • pp.938-941
    • /
    • 2000
  • SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

  • PDF

$Ar/CF_{4}/Cl_{2}$ 유도결합 플라즈마에 의한 SBT 박막의 표면 손상 (The Surface Damage of SBT Thin Film Etched in $Ar/CF_{4}/Cl_{2}$ Plasma)

  • 김동표;김창일;이철인;김태형;이원재;유병곤
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
    • /
    • pp.26-29
    • /
    • 2001
  • SrBi$_2$Ta$_2$$O_{9}$ thin films were etched at high-density C1$_2$/CF$_{4}$/Ar in inductively coupled plasma system. The etching of SBT thin films in C1$_2$/CF$_{4}$/Ar were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in Cl$_2$(20)/CF$_4$(20)/Ar(80). As f power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass spectrometry.y.

  • PDF

PSG/SiO2 보호막 처리된 Al-1%Si 박막배선에서의 Sodium과 수분 게터링에 관한 연구 (A Study on the Sodium and Moisture Gettering in PSG/SiO2 Passivated Al-1%Si Thin Film Interconnections)

  • 김진영
    • 한국진공학회지
    • /
    • 제22권3호
    • /
    • pp.126-130
    • /
    • 2013
  • PSG/$SiO_2$ 보호막 처리된 Al-1%Si 박막배선 내 sodium (Na)과 수분($H_2O$) 게터링(gettering) 현상을 측정, 분석하였다. PSG/$SiO_2$ 보호막과 Al-1%Si 박막을 상압CVD (APCVD: atmosphere pressure chemical vapor deposition)법과 DC 마그네트론 스퍼터로 각각 증착하였고, 이차이온 질량분석기(SIMS: secondary ion mass spectrometry)를 이용한 깊이분포측정(depth profiling) 분석을 통해 PSG/$SiO_2$ 보호막으로부터 Al-1%Si 박막배선 층까지의 sodium과 수분 등 성분들의 분포를 확인하였다. Sodium과 수분 피크 모두 Al-1%Si 박막배선 내부보다는 막 간 계면에서 강하게 나타났다. PSG와 $SiO_2$ 보호막 계면에서는 sodium 피크는 관찰되었지만 수분 피크는 관찰되지 않았다.

A Study on Distributions of Boron Ions Implanted by Using B and BF2 Dual Implantations in Silicon

  • Jung, Won-Chae
    • Transactions on Electrical and Electronic Materials
    • /
    • 제11권3호
    • /
    • pp.120-125
    • /
    • 2010
  • For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

재산화 질화산화막의 기억트랩 분석과 프로그래밍 특성 (A Study on the Memory Trap Analysis and Programming Characteristics of Reoxidized Nitrided Oxide)

  • 남동우;안호명;한태현;서광열;이상은
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
    • /
    • pp.17-20
    • /
    • 2001
  • Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

  • PDF

Composite Target으로 증착된 Ti-silicide의 현성에 관한 연구[II] (The Study of Formation of Ti-silicide deposited with Composite Target [II])

  • 최진석;백수현;송영식;심태언;이종길
    • 한국재료학회지
    • /
    • 제1권4호
    • /
    • pp.191-197
    • /
    • 1991
  • Composite $TiSi_{2.6}$ target으로 부터 Ti-silicide를 형성시 단결정 Si기판과 다결정 Si내의 dopant의 확산 거동, 그리고 Ti-silicide 박막의 표면 거칠기를 secondary ion mass spectrometry (SIMS), 4-point probe, X-선 회절 분석, 표면 거칠기 측정을 통해 조사하였다. X-선 회절 분석결과 중착된 직후의 중착막은 비정질이었고, 단결정 Si기판에 증착된 막은 $800^{\circ}C$에서 20초간 급속 열처리 시 orthorhombic $TiSi_2$(C54 구조)로 결정화가 이루어졌다. 단결정 Si 기판과 다결정 Si에서 Ti-silicide 충으로의 dopant의내부 확산은 거의 발생하지 않았으며, 주입된 불순물들은 Ti-silicide/Si 계면 근처의 단결정 Si이나 다결정 Si 내부에 존재하고 있었다. 또한 형성된 Ti-silicide 박막의 표면 거칠기는 16-22nm이었다.

  • PDF

고강도 구조용 철강소재의 대입열 용접 시 열영향부의 조직 미세화 및 기계적 특성 향상에 미치는 TiN 및 B의 효과 (Effects of TiN and B on Grain Refinement of HAZ Microstructure and Improvement of Mechanical Properties of High-strength Structural Steel Under High Heat Input Welding)

  • 박진성;황중기;조재영;한일욱;이만재;김성진
    • 한국재료학회지
    • /
    • 제29권2호
    • /
    • pp.97-105
    • /
    • 2019
  • In the current steel structures of high-rise buildings, high heat input welding techniques are used to improve productivity in the construction industry. Under the high heat input welding, however, the microstructures of the weld metal (WM) and heat-affected zone (HAZ) coarsen, resulting in the deterioration of impact toughness. This study focuses mainly on the effects of fine TiN precipitates dispersed in steel plates and B addition in welding materials on grain refinement of the HAZ microstructure under submerged arc welding (SAW) with a high heat input of 200 kJ/cm. The study reveals that, different from that in conventional steel, the ${\gamma}$ grain coarsening is notably retarded in the coarse grain HAZ (CGHAZ) of a newly developed steel with TiN precipitates below 70 nm in size even under the high heat input welding, and the refinement of HAZ microstructure is confirmed to have improved impact toughness. Furthermore, energy dispersive spectroscopy (EDS) and secondary-ion mass spectrometry (SIMS) analyses demonstrate that B is was identified at the interface of TiN in CGHAZ. It is likely that B atoms in the WM are diffused to CGHAZ and are segregated at the outer part of undissolved TiN, which contributes partly to a further grain refinement, and consequently, improved mechanical properties are achieved.

이차이온질량분석기의 깊이 분포도를 이용한 동선의 열적 확산에 대한 연구 (Study of Thermal Diffusion in the Copper Wire Using SIMS Depth Profiling)

  • 박종진;홍태은;조영진;서영일;문병선;박종찬;박혁규;이정식
    • 한국화재소방학회논문지
    • /
    • 제22권5호
    • /
    • pp.43-47
    • /
    • 2008
  • 최근에 이차이온질량분석기(Secondary Ion Mass Spectrometry)를 이용한 1 2차 용융흔 구별에 관한 연구가 많은 관심을 끌고 있다. 동선의 깊이 분포에 따른 $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ 이차 이온을 검출하기 위해 Cs+ 일차 이온빔을 사용하였고, 본 논문에서는 과전류에 의한 동선의 열적 확산에 대해 분석하였다. 분석결과 PVC 절연피복이 덮인 동선이 보다 더 깊이 탄소와 염소가 확산함을 보였으나, 산소는 절연피복이 덮이지 않은 동선이 더 깊이 확산된 것을 보였다.

박막태양전지용 ZnO:Al 투명전도막 표면 Self-Texturing 연구 (Study of Self Texturing on ZnO:Al TCO surface for Thin-Film Solar Cell)

  • 오경석;윤순길;이정철
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
    • /
    • pp.127.2-127.2
    • /
    • 2011
  • 본 연구에서는 RF Magnetron Sputtering System을 이용하여 ZnO계 투명전도막 증착시 Vaporization된 MeOH를 유입함으로써 박막증착과 동시에 표면의 Roughness를 제어하여 이에따른 전기적 특성 및 광학적 특성의 개선에 대하여 연구하였다. 실험방법으로 기존의 RF Magnetron Sputtering System에 Vaporization이 가능한 Ultrasonic을 이용하여 MeOH를 Vaporized시켜 MFC Controll을 통해 챔버에 유입하여 ZnO계 투명전도막의 박막증착과 동시에 표면 Texturing을 하였다. ZnO계 투명전도막의 박막증착시 Vaporized MeOH의 유입에 따른 광학적 특성변화를 UV-visible-nIR spectrometry로 조사하였으며, 전기적 특성 변화를 4-Point-Probe로 조사하였으며, 표면적 특성 변화를 Atomic Force Microscope(AFM), Scanning Electron Microscopy(SEM)를 조사하였으며, 박막의 결정성장특성 변화를 X-ray Diffraction(XRD)으로 조사하였으며, Vaporized MeOH 유입에 따른 박막의 성분분석을 Secondary Ion Mass Spectrometry (SIMS)로 조사함으로써 최적의 조건 및 공정을 확립하였다.

  • PDF