• Korean Journal of Materials Research
• /
• v.27 no.7
• /
• pp.364-368
• /
• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.78-79
• /
• 2008

In this paper, poly 3C-SiC thin films were grown on $SiO_2$/Si by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and preferred orientationsof palladium were analyzed by XRD. And Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$, 0.58 eV, respectively. And these devices operated about $350^{\circ}C$. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and applications.

• Proceedings of the KIPE Conference
• /
• 2018.07a
• /
• pp.536-538
• /
• 2018

This paper introduces an enhanced interleaved (IL) PFC (Power Factor Correction) boost converter typed 650V Intelligent Power Module (IPM), which is fully optimized hybrid IGBT converter modules; Silicon (Si) IGBT and Silicon Carbide (SiC) diode, for up to 10kW HVAC (Heating, Ventilation, and Air Conditioning) systems. It utilizes newly developed $4^{th}$ Generation Field Stop (FS) trench IGBTs, $EXTREMEFAST^{TM}$ anti-paralleled diodes, SiC Junction Barrier Schottky (JBS) diodes, Bridge rectifiers, Multi-function LVIC, and Built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC (Direct Bonded Copper) substrate for the better thermal performance. It is shown that the Si IGBT/SiC diode hybrid IL PFC module can achieve excellent EMI performance and greatly enhance the power handling capability or switching frequency of various applications compared to the Si IGBT/Diode. This paper provides an overall description of the newly developed 650V/50A Hybrid SiC IL PFC IPM product.

• Journal of IKEEE
• /
• v.24 no.2
• /
• pp.604-609
• /
• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2007.10a
• /
• pp.200-203
• /
• 2007

Devices of junction barrier schottky(JBS) structure using 4H-SiC substrates with wide energy band gaps was designed and fabricated. As a measurement results, the device of reverse I-V characteristics was shown as more than 1000 V, its design optimum length of p-grid was $3{\mu}m$ space. In this paper, I-V characteristics was modeled by using of device fabricated process conditions parameters and it was extracted that the I-V property parameters, and it was compared and analyzed with between device parameters and model parameters.

• Journal of Power Electronics
• /
• v.10 no.4
• /
• pp.335-341
• /
• 2010

In this paper, an interleaved soft switching boost converter for a Photovoltaic Power Conditioning System (PV-PCS) with high efficiency is proposed. In order to raise the efficiency of the proposed converter, a 2-phase interleaved boost converter integrated with soft switching cells is used. All of the switching devices in the proposed converter achieve zero current switching (ZCS) or zero voltage switching (ZVS). Thus, the proposed circuit has a high efficiency characteristic due to low switching losses. To analyze the power losses of the proposed converter, two experimental sets have been built. One consists of normal devices (MOSFETs, Fast Recovery (FR) diodes) and the other consists of advanced power devices (CoolMOSs, SiC-Schottky Barrier Diodes (SBDs)). To verify the validity of the proposed topology, theoretical analysis and experimental results are presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.409-412
• /
• 2004

Edge termination technique is essential fer the fabrication of high volage devices. A proper edge termination technique is also needed in the fabrication of Silicon Carbide power devices for obtaining a stable high blocking voltage properties. Among the many techniques, the field plate formation is the easiest one that can utilize it for commercial usage. The growth of thick thermal oxide is difficult for SiC, however. In this paper, 6A grade SiC schottky barrier diodes(SBD) were fabricated with field plate edge termination. The oxides which is field plate were formed various methods such as dry oxidation, 10% $N_2O$ nitrided oxidation and PECVD deposition. The reverse characteristics of the SiC SBD with various oxide field plate were investigated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.290.1-290.1
• /
• 2013

The electrical characterization of Au islands on TiO2 at nanometer scale (as a Schottky nanodiode) has been studied with conductive atomic force microscopy in ultra-high vacuum. The diverse sizes of the Au islands were formed by using self-assembled patterns on n-type TiO2 semiconductor film using the Langmuir-Blodgett process. Local conductance images showing the current flowing through the TiN coated AFM probe to the surface of the Au islands on TiO2 was simultaneously obtained with topography, while a positive sample bias is applied. The boundary of the Au islands revealed a higher current flow than that of the inner Au islands in current AFM images, with the forward bias presumably due to the surface plasmon resonance. The nanoscale Schottky barrier height of the Au/TiO2 Schottky nanodiode was obtained by fitting the I-V curve to the thermionic emission equation. The local resistance of the Au/TiO2 nanodiode appeared to be higher at the larger Au islands than at the smaller islands. The results suggest that conductive atomic force microscopy can be used to reveal the I-V characterization of metal size dependence and the electrical effects of surface plasmon on a metal-semiconductor Schottky diode at nanometer scale.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.2
• /
• pp.208-214
• /
• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.11
• /
• pp.980-986
• /
• 2009

In a triple-layered structure of ITO/N,N'-diph enyl-N,N'bis(3-methylphenyl)-1,1' - biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/Al device, we have studied the electrical and optical characteristics of organic light-emitting diodes(OLEDs) depending on the deposition condition of BCP layer. Several different sizes of holes on boat and several different deposition rates were employed in evaporating the organic materials. And then, electrical properties of the organic light-emitting diodes were measured and the performance of the devices was analyzed. It was found that the hole-size of crucible boat and the evaporation rate affect on the surface roughness of BCP layer as well as the performance of the device. When the hole-size of crucible boat and the deposition rate of BCP are 1.2 mm and $1.0\;{\AA}/s$, respectively, average surface roughness of BCP layer is lower and the efficiency of the device is higher than the ones made with other conditions. From the analysis of current density-luminance-voltage characteristics of a triple layered device, we divided the conductive mechanism by four region according to applied voltage. So we have obtained a coefficient of ${\beta}_{ST}$ in schottky region is $3.85{\times}10^{-24}$, a coefficient of ${\beta}_{PF}$ in Poole-Frenkel region is $7.35{\times}10^{-24}$, and a potential barrier of ${\phi}_{FN}$ in Fower-Nordheim region is 0.39 eV.