• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.4
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• pp.105-113
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• 2010

In this paper, a 1.485 Gbps video signal transmission system using the carrier frequency of 240 GHz band was designed and simulated. The sub-harmonic mixer based on Schottky barrier diode was simulated in the transmitter and receiver. Both of heterodyne and direct detection receivers were simulated for each performance analysis. The ASK modulation was used in the transmitter and the envelop detection method was used in the receiver. The transmitter simulation results showed that the RF output power was -11.4 dBm($73{\mu}W$), when the IF input power was -3 dBm(0.5 mW) at the LO power of 7 dBm(5 mW) in sub-harmonic mixer, which corresponds to SSB(Single Side Band) conversion loss of 8.4 dB. This value is similar to the conversion loss of 8.0 dB(SSB) of VDI's commercial model WR3.4SHM(220~325 GHz) at 240 GHz. The combined transmitter and receiver simulation results showed that the recovered signal waveforms were in good agreement to the transmitted 1.485 Gbps NRZ signal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.3A
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• pp.435-442
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• 2000

In this paper, we analyzed RF-DC conversion efficiency for the dual -polarization rectenna and the antenna position changing. Dual-Polarization rectenna consist of a two major parts, receiving antenna and rectifying circuits. We made dual-polarization 2.45GHz rectenna using the two dipole antennas and patch antenna. Rectifying circuit is consisted by a Schottky-Barrier diode with a large forward current and reverse breakdown voltage. The results of RF-DC conversion efficiency for the each of designed dual-polarization rectenna has 69.1% with 360$\Omega$(dipole type) and 75.4% with 340$\Omega$(patch type ) optimum load resistor. When the each of dual-polarization rectenna has optimal load resistor, it's conversion efficiency shows of $\pm$20% in dipole type and $\pm$5 in patch type at 0~180。position.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.110-113
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• 1993

The MOSFET synchronous rectification in the Active-Clamp Forward converter is presented. The Active-Clamp Forward converter has little dead time during the off time of the main switch and it is suitable for the MOSFET synchronous rectification comparing to the other Forward converter topologics. Using the MOSFET synchronous rectification on the Active-Clamp Forward converter with 3.3[V] output and 500[kHz] switching frequency, the improvement of efficiency is achieved comparing with the conventional Schottky barrier diode rectification.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.1
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• pp.15-22
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• 1974

A new ternary full adder using the current controlled negative-resistance circuit is described. The full adder is constructed from the modified-half-adder which was devised by making use of a negative resistance circuit. This full adder makes the number of its gates decrease and makes its own speed increase in comparison with the full adders which had been introduced previously. It is convenient to construct to the integrated circuit because transistor, SBD(Schottky Barrier Diode) and resistors were used as the circuit elements.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.3-5
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• 2005

Ni/Au 쇼트키 접합의 산화를 통해 항복전압이 증가하고 누설 전류가 감소한 수평방향 GaN 쇼트키 장벽 다이오드를 제작하였다. 산화 과정 후, 턴-온 전압이 미세하게 증가하였으며 높은 애노드 전압하에서 애노드 전류가 증가하였다. 5분과 10분의 산화 과정 후, 누설 전류는 1nA 이하 수준으로 현저히 감소하였다. Edge Termination 방법으로 Floating Metal Ring을 사용하고, 산화 과정을 적용하여 제안된 GaN 쇼트키 장벽 다이오드의 항복전압은 750볼트의 큰 값을 얻을 수 있었다. 상온과 $125^{\circ}C$ 에서 제작한 GaN 쇼트키 장벽 다이오드의 역방향 회복 파형도 측정하였으며, 제작한 소자는 매우 빠른 역방향 회복 특성을 보였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.821-826
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• 2008

Recently as a progress of electric technology, modern electric systems become more and more complicated. Thus, it is difficult to use a classical method to analyze responses of the systems in complicated electromagnetic environments because there are so many coupling phenomena. The electromagnetic topology (EMT) is a helpful solution to analyze electromagnetic interference / electromagnetic compatibility (EMI/EMC) of the large complex system. In this paper, EMT is applied to analyze an active element. And then to prove the validity of this analysis, a detector circuit including Schottky barrier diode is analyzed by EMT when input power is given directly.

• Journal of electromagnetic engineering and science
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• v.11 no.4
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• pp.257-261
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• 2011

A highly efficient 2.4 GHz rectenna is designed using a harmonic rejection bandpass filter. The rectenna is printed on Rogers Duroid 5880 substrate with ${\varepsilon}_r$=2.2 and a thickness of 1.6 mm. The rectenna consists of a microstrip antenna and high order harmonic rejection bandpass filter, microstrip lowpass filter, and Schottky barrier diode (HSMS2820). The use of a $2^{nd}$ and $3^{rd}$ harmonic rejection microstrip bandpass filter in the rectenna results in high conversion efficiency. The proposed rectenna achieves a RF to DC conversion efficiency of 72.17 % when the received RF power is 63.09 mW.

• ETRI Journal
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• v.33 no.6
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• pp.965-968
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• 2011

A 1.485-Gbit/s video signal transmission system at carrier frequencies of 240 GHz and 300 GHz was implemented and demonstrated. The radio frequency front-ends are composed of Schottky barrier diode subharmonic mixers (SHMs), frequency triplers, and diagonal horn antennas for the transmitter and receiver. Amplitude shift keying with an intermediate frequency of 5.94 GHz was utilized as the modulation scheme. A 1.485-Gbit/s video signal with a high-definition serial digital interface format was successfully transmitted over a wireless link distance of 4.2 m and displayed on an HDTV with a transmitted average output power of 20 ${\mu}W$ at a 300-GHz system.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2004-2006
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• 2005

트렌치 애노드 컨택을 설계하여 순방향 전압강하를 감소시키는 GaN 쇼트키 장벽 다이오드를 제안하였다. 애노드 내부에 트렌치를 설계하여 제안된 소자의 표면 애노드 컨택은 메탈 일 함수(metal work function)가 높은 Pt와 형성되며, 트렌치 애노드 컨택은 메탈 일 함수가 낮은 Au와 형성된다. 제안된 소자의 전기적 특성을 검증하기 위하여 2차원 수치 해석 시뮬레이션을 수행하였고, AlGaN/GaN 혜테로 접합 구조 위에 제작 및 측정하였다. 제안된 소자는 복잡한 공정 추가 없이 제작되며 $100A/cm^2$에서의 순방향 전압 강하는 0.73V로 기존 소자의 1.25V보다 우수한 특성을 보였다. 제안된 소자의 온 저항은 $1.58m{\Omega}cm^2$로 기존 소자의 온 저항 $8.20m{\Omega}cm^2$ 보다 낮은 장점을 가진다.