• Title/Summary/Keyword: scattering film

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Optical properties and applications of $TiO_2$ films prepared by ion beam sputtering (이온빔 스퍼터링으로 증착한 $TiO_2$박막의 광학적 특성 및 응용)

  • 이정환;조준식;김동환;고석근
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.176-182
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    • 2002
  • Amorphous $TiO_2$ thin films were deposited on glass substrates by ion beam sputtering in which the ratio of $O_2$/Ar gas used as discharged gas was varied from 0 to 2. After optical and microstructure properties and chemical composition of thin films was analyzed, antireflection coating layers were fabricated with $SiO_2$/$TiO_2$ multi-layers. Thin films deposition was performed at room temperature and ion beam voltage and ion current density for sputtering of target were fixed at 1.2 kV and 200 $\mu\textrm{A}/\textrm{cm}^2$, respectively. Refractive indexs of the deposited $TiO_2$films were 2.40-2.45 at a wavelength of 633 nm. $TiO_2$films had high transmission and stoichiometry when ratio of $O_2$/Ar was 1. Rms roughness of deposited $TiO_2$ film was below 7 $\AA$. In excessive $O_2$ environments, however Rms roughness increased over 50 $\AA$. Transmittance decreased by scattering of rough surface. Reflectance of $SiO_2$/$TiO_2$multi-layers was below 1% in visible light.

이온산란분광법을 이용한 Si(113)의 표면 구조 변화 관찰

  • 조영준;최재운;강희재
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.148-148
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    • 2000
  • 지금까지 반도체 표면에 대한 연구는 주로 (1000, (111) 표면 등 낮은 밀러 지표를 가진 표면에 대해 이루어져 왔다. 이에 반해 밀러 지표가 높은 Si 면은 불안정하고, 가열하면 다른 표면, 즉 지표가 낮은 면으로 재배열하는 경향이 있는 것으로 알려져 있는데 아직 이들 높은 밀러 지표를 가진 표면에 대한 연구는 미미한 상태이다. 그러나, Si(113)면은 밀러 지표가 높으면서도 안정하기 때문에 Si(113)의 구조를 정확하게 알 수 있다면 밀러 지표가 낮은 Si 표면이 안정한 이유를 이해할 수 있을 것이다. 따라서 본 연구에서는 TOF-CAICISS 장치(Time of Flight - CoAxial Impact Collision Ion Scattering Spectroscopy) 장비와 RHEED(Reflection High Energy Electron Diffrction)를 이용하여 Si(113) 표면의 구조와 Si(113) 표면의 온도에 따른 구조 변화를 관찰하였다. TOF-CAICISS 실험결과를 보면 (3$\times$2)에서 (3$\times$1)으로 상변환하면서 Si(113) 표면에 오각형을 이루는 dimer 원자들과 adatom 원자들간의 높이차가 작아짐을 알 수 있다. RHEED 실험결과와 전산 모사 결과로부터 상온에서 Si(113)(3$\times$2) 구조를 가지다가 45$0^{\circ}C$~50$0^{\circ}C$에서 Si(113) (3$\times$1) 구조로 상변환한다는 것을 알 수 있다. 그러나, 아직 상전이 메카니즘은 명확하게 밝혀지지 않았다. 실험결과를 전산 모사와 비교함으로써 Si(113) 표면에 [33]방향으로 이온빔을 입사시켰을 경우 dabrowski 모델과 Ranke AI 모델이 적합하지 않다는 것을 알 수 있다./TEX>, shower head의 온도는 $65^{\circ}C$로 설정하였다. 증착된 Cu 박막은 SEM, XRD, AFM를 통해 제작된 박막의 특성을 비교.분석하였다. 초기 plasma 처리를 한 경우에는 그림 1에서와 같이 현저히 증가한 초기 구리 입자들이 관측되었으며, 이는 도상 표면에 활성화된 catalytic site의 증가에 기인한다고 보여진다. 이러한 특성은 Cu films의 성장률을 향상시키고, 또한 voids를 줄여 전기적 성질 및 surface morphology를 향상시키는 것으로 나타났다. 결과 필름의 잔류 응력과 biaxial elastic modulus는 필름의 두께가 감소함에 따라 감소하는 경향을 나타냈으며, 같은 두께의 필름인 경우, 식각 깊이에 따른 biaxial elastic modulus 의 변화를 통해 최적의 식각 깊이를 알 수 있었다.도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대체할 수 있다.

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Effect of Concentration and Surface Property of Silica Sol on the Determination of Particle Size and Electrophoretic Mobility by Light Scattering Method (광산란법에서 실리카 졸의 농도 및 표면특성이 입자 크기 및 전기영동 이동도 측정결과에 미치는 영향)

  • Cho, Gyeong Sook;Lee, Dong-Hyun;Kim, Dae Sung;Lim, Hyung Mi;Kim, Chong Youp;Lee, Seung-Ho
    • Korean Chemical Engineering Research
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    • v.51 no.5
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    • pp.622-627
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    • 2013
  • Colloidal silica is used in various industrial products such as chemical mechanical polishing slurry for planarization of silicon and sapphire wafer, organic-inorganic hybrid coatings, binder of investment casting, etc. An accurate determination of particle size and dispersion stability of silica sol is demanded because it has a strong influence on surface of wafer, film of coatings or bulks having mechanical, chemical and optical properties. The study herein is discussed on the effect of measurement results of average particle size, sol viscosity and electrophoretic mobility of particle according to the volume fraction of eight types of silica sol with different size and surface properties of silica particles which are presented by the manufacturer. The measured particle size and the mobility of these sol were changed by volume fraction or particle size due to highly active surface of silica particle and change of concentration of counter ion by dilution of silica sol. While in case the measured sizes of small particles less than 60 nm are increased with increasing volume fraction, the measured sizes of larger particles than 60 nm are slightly decreased. The mobility of small particle such as 12 nm are decreased with increase of viscosity. However, the mobility of 100 nm particles under 0.048 volume fraction are increased with increasing volume fraction and then decreased over higher volume fraction.

SiGe Alloys for Electronic Device Applications (실리콘-게르마늄 합금의 전자 소자 응용)

  • Lee, Seung-Yun
    • Journal of the Korean Vacuum Society
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    • v.20 no.2
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    • pp.77-85
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    • 2011
  • The silicon-germanium (SiGe) alloy, which is compatible with silicon semiconductor technology and has a smaller band gap and a lower thermal conductivity than silicon, has been used to fabricate electronic devices such as transistors, photodetectors, solar cells, and thermoelectric devices. This paper reviews the application of SiGe alloys to electronic devices and related technical issues. Since the SiGe alloy comprises germanium whose band gap is smaller than silicon, its band gap is also smaller than that of silicon irrespective of the ratio of silicon to germanium. This narrow band gap of SiGe enables the base thickness of bipolar transistors to decrease without a loss in current gain so that it is possible to improve the speed of bipolar transistors by adopting the SiGe-base. In addition, the conversion efficiency of solar cells is enhanced by the absorption of long-wavelength light in the SiGe absorption layer. Phonon scattering caused by the irregular distribution of alloying elements induces the lower thermal conductivity of SiGe than those of pure silicon and germanium. Because a thin film layer with a low thermal conductivity suppresses thermal conduction through a thermal sink, the SiGe alloy is considered to be a promising material for silicon-based thermoelectric systems.

Polymer Optical Microring Resonator Using Nanoimprint Technique (나노 임프린트 기술을 이용한 폴리머 링 광공진기)

  • Kim, Do-Hwan;Im, Jung-Gyu;Lee, Sang-Shin;Ahn, Seh-Won;Lee, Ki-Dong
    • Korean Journal of Optics and Photonics
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    • v.16 no.4
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    • pp.384-391
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    • 2005
  • A polymer optical microring resonator, which is laterally coupled to a straight bus waveguide, has been proposed and demonstrated using a nanoimprint technique. The propagation loss of the ring waveguide and the optical power coupling between the ring and bus waveguides was calculated by using a beam propagation method, then the dependence of the device performance on them was investigated using a transfer matrix method. We have especially introduced an imprint stamp incorporating a smoothing buffer layer made of a silicon nitride thin film. This layer played an efficient role in improving the sidewall roughness of the waveguide pattern engraved on the stamp and thus reducing the scattering loss. As a result the overall Q factor of the resonator was greatly increased. Also it reduced the gap between the ring and bus waveguides effectively to enhance the coupling between them, without relying on the direct writing method based on an e-beam writer. As for the achieved device performance at the wavelength of 1550 nm, the quality factor, the extinction ratio, and the free spectral range were ~103800, ~11 dB, and 1.16 m, respectively.

CuO Nanograss as a Substrate for Surface Enhanced Raman Spectroscopy

  • Lee, Jun-Young;Park, Jiyun;Kim, Jeong-Hyun;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.249-249
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    • 2013
  • Surface-enhanced Raman spectroscopy (SERS) is a sensitive approach to detect and to identify a variety of molecules. To enhance the Raman signal, optimization of the gap between nanostructures is quite important. One-dimensional materials such as nanowires, nanotubes, and nanograsses have great potential to be used in SERS due to their unique sizes and shape dependent characteristics. In this study we investigate a simple way to fabricate SERS substrates based on randomly grown copper oxide (CuO) nanowires. CuO nanograss is fabricated on pre-cleaned Cu foils. Cu oxidized in an ammonium ambient solution of 2.5 M NaOH and 0.1 M $(NH_4)_2S_2O_8$ at $4^{\circ}C$ for 10, 30, and 60 minutes. Then, Cu(OH)2 nanostructures are formed and dried at $180^{\circ}C$ for 2 h. With the drying process, the Cu(OH)2 nanostructure is transformed to CuO nanograss by dehydration reaction. CuO nanograss are grown randomly on Cu foil with the average length of 10 ${\mu}m$ and the average diameter of a 100 nm. CuO nanograsses are covered by Ag with various thicknesses from 10 to 30 nm using a thermal evaporator. Then, we immerse uncoated and Ag coated CuO nanowire samples of various oxidation times in a 0.001M methanol-based 4-mercaptopyridine (4-Mpy) in order to evaluate SERS enhancement. Raman shift and SERS enhancement are measured using a Raman spectrometer (Horiba, LabRAM ARAMIS Spectrometer) with the laser wavelength of 532 nm. Raman scattering is believed to be enhanced by the interaction between CuO nanograss and Ag island film. The gaps between Ag covered CuO nanograsses are diverse from <10 nm at the bottom to ~200 nm at the top of nanograsses. SERS signal are improved where the gaps are minimized to near 10s of nanometers. There are many spots that provide sufficiently narrow gap between the structures on randomly grown CuO nanograss surface. Then we may find optimal enhancement of Raman signal using the mapping data of average results. Fabrication of CuO nanograss based on a solution method is relatively simple and fast so this result can potentially provide a path toward cost effective fabrication of SERS substrate for sensing applications.

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Structural and optical properties of TiO2 thin films prepared by Sol-Gel dip coating method (졸-겔 침지코팅법으로 제조된 TiO2 박막의 구조적.광학적 특설)

  • 김동진;이학준;한성홍;김의정
    • Korean Journal of Optics and Photonics
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    • v.13 no.3
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    • pp.197-203
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    • 2002
  • The TiO$_2$ coating solutions were synthesized with different concentrations (T1-0.7N, T2-2.0N) of hydrochloric acid used as catalyst. and TiO$_2$ thin films were prepared by sol-gel dip coating. Their structural and optical properties were examined as a function of calcination temperature. XRD results showed that T1 thin films calcined at 400~80$0^{\circ}C$ had the anatase phase, while those calcined at 100$0^{\circ}C$ had the rutile phase. T2 thin films calcined at 40$0^{\circ}C$ and $600^{\circ}C$ had the anatase phase, with the rutile phase for calcination at 80$0^{\circ}C$. Crystallinity of T2 thin films was superior to that of T1 thin films. The crystallite size of TiO$_2$ thin films increased with increasing calcination temperature, and the crystallite size of anatase phase in T2 thin films was larger than that in T1 thin films, but the crystallite size of rutile phase in T2 thin films was smaller. The surface morphology of the films showed that the films were formed more densely in the rutile phase than in the anatase phase, this phenomenon appeared conspicuously in T2 thin films. The transmittance of the samples with thin films on quartz glass calcined at 100$0^{\circ}C$ was significantly reduced at wavelength range about 300-700 nm due to the increased absorption originating from the change of crystallite phase and composition of the films and the scattering effect originating from increasing crystallite size. The refractive index of TiO$_2$ thin films increased, and hence the film thickness as well as the porosity of TiO$_2$ thin films decreased with increasing calcination temperature. Furthermore, the refractive index of T2 thin films was higher than T1 thin films, and porosity of T2 films was lower.

Silicon thin films and solar cells by HWCVD (열선 화학 기상 증착법에 의한 실리콘 박막 및 태양전지 특성)

  • Kim Sang-Kyun;Lee Jeong Chul;Jeon Sang Won;Lim Chung Hyun;Ahn Sae Jin;Yun Jae Ho;Kim Seok Ki;Song Jinsoo;Park S-J;Yoon Kyung Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.205-208
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    • 2005
  • 최근 열선 화학 기상 증착법(HWCVD)은 낮은 온도에서 TFT용 Poly Si 중착을 할 수 있다는 점과 실리콘 박막을 빠른 속도로 증착할 수 있다는 점에서 각광을 받고 있다. 본 연구에서는 HWCVD를 이용하여 태양전지를 제조하고 그 특성을 평가하였다. 조건에 따른 실리콘 박막의 특성 변화를 알기 위해 corning glass 및 실리콘 wafer에 다양한 조건에서 단위 박막(intrinsic layer)을 증착하였고 이 결과를 바탕으로 p/i/n 구조의 태양전지를 제조하였다. Ta 열선 온도는 1700-2000도였고 가스 원료인 $SiH_4$와 수소의 비율을 조절하면서 그 영향을 관찰하였다. 태양전지의 경우 p충과 n충은 PECVD로 증착하였으며 단위박막 및 태양전지 i충 증착시 기판과 열선간의 거리는 7cm, 기판 온도는 $200^{\circ}C$$250^{\circ}C$로 고정하였고 작업압력은 30mTorr였다. 단위 박막 특성 평가를 위해 암/광 전도도, SEM, Raman Scattering, FT-IR등을 사용하였으며 태양전지 특성 평가를 위해 I-V 및 Spectral response를 측정하였다. 열선 온도가 증가함에 따라 증착속도 및 결정화 분율은 증가하였다. 특히 비정질에서 결정질로 전이되는 구간은 매우 좁았으며 여러 분석 방법에서 일치되는 결과를 보였다. $SiH_4$ 유량이 늘어날수록 비정질이 결정질로 바뀌는 열선 온도가 증가하였으며 기판 온도가 낮을 경우 또한 결정으로 바뀌는 열선 온도가 증가하였다. 태양전지의 경우 열선 온도가 증가함에 따라 $V_{oc}$ 및 W가 낮아졌으며 $J_{sc}$, 는 증가하는 경향을 보였으며 결정질 비율이 증가하는 것을 관찰할 수 있었다. 이러한 경향은 quantum efficiency 결과에서도 확인할 수 있었다.용을 반복하면서 석재 내부와 외부의 암석 및 결정에 균열과 미세열극 등이 생성되어 석재 자체의 구조적 안정성에 영향을 주고 있다. 따라서 감은사지 석탑은 지리적 환경 차이로 인해 일반적인 환경의 석조물들과는 다른 형태의 풍화양상을 보이고 있어서 풍화양상 및 풍화형태에 대한 정확한 연구와 이해를 바탕으로 보존대책이 마련되어야 한다.되었다. 이런 모든 시편들을 각 탈염방법에 따라 탈염처리한 후 XRD와 SEM-EDS으로 분석한 결과 인철광과 침철광은 어떠한 변화도 보이지 않았고, 다만 적금광으로 동정된 시편만이 잔존하지 않았다. 철기 제작별 $Cl^-$ 이온 추출량과 탈염효과에 대한 비교 실험은 이온 크로마토그래피 분석 결과와 마찬가지로 단조 철제유물이 주조 철제보다 $Cl^-$ 이온을 많이 가지고 있었으며, 탈염 처리 후에는 $Cl^-$ 이온은 전혀 발견되지 않았다. 이상의 결과 $K_2CO_3$와 Sodium 용액은 탈염처리에서 가장 적합한 탈염처리 용액으로 알수가 있었으며 특히 어떠한 탈염 용액으로 유물을 처리한다 해도 철제유물에 생성된 부식물은 제거되지 않는다는 것을 알게 되었다. 따라서 보존처리자는 유물 표면의 부식 상태만을 보고 처리하기 보다는 철기제작물로 고려하여 처리하는 것이 필요하다. 또한 금속에 부식을 야기시키는 $Cl^-$ 이온과 부식물을 완전하게 제거하여 탈염처리를 하는 것이 유물 부식을 최대한 지연시킬 수 있는 것이라 생각된다.TEX>$88\%$)였다.(P=0.063). 결론: 본 연구에서는 MTHFR C/T & T/T 유전자 다형성이 위암의 발생과 그 위치에 대해 관련이 있는 것으로 여겨지고, 흡연력, 음주력과는 관련이 없는 것으로 여겨진다.험이 커지는 경향을 보였으나, 나이 및 병기, 종양의 크기, MD-BED $Gy_{10}$ 등의 예후 인자를 보정한 다변

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Development of Dose Planning System for Brachytherapy with High Dose Rate Using Ir-192 Source (고선량률 강내조사선원을 이용한 근접조사선량계획전산화 개발)

  • Choi Tae Jin;Yei Ji Won;Kim Jin Hee;Kim OK;Lee Ho Joon;Han Hyun Soo
    • Radiation Oncology Journal
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    • v.20 no.3
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    • pp.283-293
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    • 2002
  • Purpose : A PC based brachytherapy planning system was developed to display dose distributions on simulation images by 2D isodose curve including the dose profiles, dose-volume histogram and 30 dose distributions. Materials and Methods : Brachytherapy dose planning software was developed especially for the Ir-192 source, which had been developed by KAERI as a substitute for the Co-60 source. The dose computation was achieved by searching for a pre-computed dose matrix which was tabulated as a function of radial and axial distance from a source. In the computation process, the effects of the tissue scattering correction factor and anisotropic dose distributions were included. The computed dose distributions were displayed in 2D film image including the profile dose, 3D isodose curves with wire frame forms and dosevolume histogram. Results : The brachytherapy dose plan was initiated by obtaining source positions on the principal plane of the source axis. The dose distributions in tissue were computed on a $200\times200\;(mm^2)$ plane on which the source axis was located at the center of the plane. The point doses along the longitudinal axis of the source were $4.5\~9.0\%$ smaller than those on the radial axis of the plane, due to the anisotropy created by the cylindrical shape of the source. When compared to manual calculation, the point doses showed $1\~5\%$ discrepancies from the benchmarking plan. The 2D dose distributions of different planes were matched to the same administered isodose level in order to analyze the shape of the optimized dose level. The accumulated dose-volume histogram, displayed as a function of the percentage volume of administered minimum dose level, was used to guide the volume analysis. Conclusion : This study evaluated the developed computerized dose planning system of brachytherapy. The dose distribution was displayed on the coronal, sagittal and axial planes with the dose histogram. The accumulated DVH and 3D dose distributions provided by the developed system may be useful tools for dose analysis in comparison with orthogonal dose planning.