• 제목/요약/키워드: scanning microscopy

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STM에 의한 Dipyridinium 유기분자의 전압-전류 특성 연구 (A Study on the Current-voltage Properties of Dipyridinium Molecule using Scanning Tunneling Microscopy)

  • 이남석;신훈규;장정수;권영수
    • 한국전기전자재료학회논문지
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    • 제18권7호
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    • pp.622-627
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    • 2005
  • In this study, electrical properties of self-assembled dipyridinium dithioacetate molecule onto the Au(111) substrate is observed using Scanning Tunneling Microscopy(STM) by vortical structure of STM probe. At first, the Au(111) substrate is cleaned by piranha solution$(H_2SO_4:H_2O_2\;=\;3:1)$. Subsequently, 1 mM/ml of dipyridinium dithioacetate molecule is self-assembled onto the Au(111) surface. Using STM, the images of dipyridinium dithioacetate molecule which is self-assembled onto the Au(111) substrate, can be observed. In addition, the electrical properties(I-V) of dipyridinium dithioacetate can also be examined by using Scanning Tunneling Spectroscopy(STS). From the results of the measurement of the current-voltage(I-V), the property of Negative Differential Resistance(NDR) that shows the decreases of current according to the increases of voltage is observed. We found the NDR voltage of the dipyridinium dithioacetate is -1.42 V(negative region) and 1.30 V(positive region), respectively.

Narrow Resonant Double-Ridged Rectangular Waveguide Probe for Near-Field Scanning Microwave Microscopy

  • Kim, Byung-Mun;Son, Hyeok-Woo;Cho, Young-Ki
    • Journal of Electrical Engineering and Technology
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    • 제13권1호
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    • pp.406-412
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    • 2018
  • In this paper, we propose a narrow resonant waveguide probe that can improve the measurement sensitivity in near-field scanning microwave microscopy. The probe consists of a metal waveguide incorporating the following two sections: a straight section at the tip of the probe whose cross-section is a double-ridged rectangle, and whose height is much smaller than the waveguide width; and a standard waveguide section. The advantage of the narrow waveguide is the same as that of the quarter-wave transformer section i.e., it achieves impedance-matching between the sample under test (SUT) and the standard waveguide. The design procedure used for the probe is presented in detail and the performance of the designed resonant probe is evaluated theoretically by using an equivalent circuit. The calculated results are compared with those obtained using the finite element method (Ansoft HFSS), and consistency between the results is demonstrated. Furthermore, the performance of the fabricated resonant probe is evaluated experimentally. At X-band frequencies, we have measured the one-dimensional scanning reflection coefficient of the SUT using the probe. The sensitivity of the proposed resonant probe is improved by more than two times as compared to a conventional waveguide cavity type probe.

탐침과 시편의 위치를 역전시킨 주사 탐침 현미경용 다이아몬드 탐침의 제작 및 평가 (Design, Fabrication and Evaluation of Diamond Tip Chips for Reverse Tip Sample Scanning Probe Microscope Applications)

  • 김수길;;김진혁
    • 한국재료학회지
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    • 제34권2호
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    • pp.105-110
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    • 2024
  • Scanning probe microscopy (SPM) has become an indispensable tool in efforts to develop the next generation of nanoelectronic devices, given its achievable nanometer spatial resolution and highly versatile ability to measure a variety of properties. Recently a new scanning probe microscope was developed to overcome the tip degradation problem of the classic SPM. The main advantage of this new method, called Reverse tip sample (RTS) SPM, is that a single tip can be replaced by a chip containing hundreds to thousands of tips. Generally for use in RTS SPM, pyramid-shaped diamond tips are made by molding on a silicon substrate. Combining RTS SPM with Scanning spreading resistance microscopy (SSRM) using the diamond tip offers the potential to perform 3D profiling of semiconductor materials. However, damage frequently occurs to the completed tips because of the complex manufacturing process. In this work, we design, fabricate, and evaluate an RTS tip chip prototype to simplify the complex manufacturing process, prevent tip damage, and shorten manufacturing time.

Quantitative Evaluation of Dislocation Density in Epitaxial GaAs Layer on Si Using Transmission Electron Microscopy

  • Kim, Kangsik;Lee, Jongyoung;Kim, Hyojin;Lee, Zonghoon
    • Applied Microscopy
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    • 제44권2호
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    • pp.74-78
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    • 2014
  • Dislocation density and distribution in epitaxial GaAs layer on Si are evaluated quantitatively and effectively using image processing of transmission electron microscopy image. In order to evaluate dislocation density and distribution, three methods are introduced based on line-intercept, line-length measurement and our coding with line-scanning method. Our coding method based on line-scanning is used to detect the dislocations line-by-line effectively by sweeping a thin line with the width of one pixel. The proposed method has advances in the evaluation of dislocation density and distribution. Dislocations can be detected automatically and continuously by a sweeping line in the code. Variation of dislocation density in epitaxial GaAs films can be precisely analyzed along the growth direction on the film.

전자현미경을 이용한 나노셀룰로오스 물질의 형태학적 특성 분석 연구 (Electron Microscopy for the Morphological Characterization of Nanocellulose Materials)

  • 권오경;신수정
    • 펄프종이기술
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    • 제48권1호
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    • pp.5-18
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    • 2016
  • Electron microscopy is an important investigation and analytical method for the morphological characterization of various cellulosic materials, such as micro-crystalline cellulose (MCC), microfibrillated cellulose (MFC), nanofibrillated cellulose (NFC), and cellulose nanocrystals (CNC). However, more accurate morphological analysis requires high-quality micrographs acquired from the proper use of an electron microscope and associated sample preparation methods. Understanding the interaction of electron and matter as well as the importance of sample preparation methods, including drying and staining methods, enables the production of high quality images with adequate information on the nanocellulosic materials. This paper provides a brief overview of the micro and nano structural analysis of cellulose, as investigated using transmission and scanning electron microscopy.

종이의 물성에 영향하는 섬유특성의 정량적 해석(II) (Quantitative Analysis of Pulp fiber Characteristics that Affect Paper Properties (II))

  • 이강진;박종문
    • 펄프종이기술
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    • 제32권2호
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    • pp.35-39
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    • 2000
  • Refining is very important process of fibers treatment for proper paper properties. An extent of refining is usually measured by freeness, although freeness gives complicated meanings. One of a direct way of studying the refining effects on pulp fibers is making photomicrographs of beaten fibers. The conventional microscopy like light microscopy(LM) and scanning electron microscopy(SEM) require to preserve the wet structure of pulp fibers morphologically since most of papermaking process is carried out almost entirely in water. Recently developed microscopy, especially confocal laser scanning microscopy(CLSM), offers the possibility of examining fully hydrated pulp fibers. Cross-sectional images of wet pulp fibers are also generated using optical sectioning by CLSM and image analysis in order to verify and quantify the extent of fiber wall swelling indicating the internal fibrillation. At low beating load such as 2.5 kgf, in the same freeness, breaking length is higher than that of high beating load such as 5.6 kgf. fiber wall thickness at low beating load is greater than that at high beating load. This result is accounted for the fact that internal fibrillation in the low beating load was high.

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Optimal Conditions for Defect Analysis Using Electron Channeling Contrast Imaging

  • Oh, Jin-Su;Yang, Cheol-Woong
    • Applied Microscopy
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    • 제46권3호
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    • pp.164-166
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    • 2016
  • Electron channeling contrast imaging (ECCI) is a powerful analyzing tool for identifying lattice defects like dislocations and twin boundaries. By using diffraction-based scanning electron microscopy technique, it enables microstructure analysis, which is comparable to that obtained by transmission electron microscopy that is mostly used in defect analysis. In this report, the optimal conditions for investigating crystal defects are suggested. We could obtain the best ECCI images when both acceleration voltage and probe current are high (30 kV and 20 nA). Also, shortening the working distance (6 mm) enhances the quality of defect imaging.