• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.3C
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• pp.234-240
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• 2002

A power amplifier with AlGaAs/InGaAs/GaAs HBT's has been developed for customer premise equipments of the quasi millimeter-wave frequency-band broadband wireless local loop(BWLL) system. Parameters of the linear and nonlinear equivalent circuits for a common base HBT have been extracted by a fitting method. The amplifier has been designed through the linear and nonlinear circuit simulations and fabricated on a ceramic substrate for a hybrid IC. The amplifier has produced a 25.5-dBm output power with 35% power-added efficiency(PAE) at 24.4 GHz and achieved a 7.5-dB linear power gain at 24.8 GHz. In 24.25 ∼24.75 GHz band, the amplifier has exhibited a saturated output over larger than 22 dBm and PAE higher than 25%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.501-505
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• 2015

In this paper, we demonstrated a 4W power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band satellite communication applications. The used device technology relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) process. The 4W power amplifier MMIC has linear gain of over 30 dB and saturated output power of over 36.1 dBm in the frequency range of 13.75 GHz ~ 14.5 GHz. Power added efficiency (PAE) is over 30 %.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.274-279
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• 2009

In this paper, a wide dynamic range active pixel sensor(APS) with output voltage feedback structure has been designed by a 2-poly 4-metal 0.35 $\mu$m standard CMOS technology. We presented a novel APS with output voltage feedback, which exhibits a wide dynamic range. The dynamic range increases at the cost of an additional diode and an additional MOSFET. The output voltage feedback structure enables the control of the output voltage level by itself, as incident light power varies. It is confirmed that the light level which the output voltage level of proposed APS is saturated is about 120,000 lux, which is higher than that of a conventional 3-transistor APS.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.71-78
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• 1994

We have developed GaAs power metal semiconductor field effect transistors (MESFETs) for 4.7V operation under 900 MHz using a low-high deped structures grown by molecular beam epitaxy (MBE). The fabricted MESFETs with a gate widty of 7.5 mm and a gate length of 1.0.mu.m show a saturated drain current (Idss) of 1.7A and an uniform transconductance (Gm) of around 600mS, for gate bias ranged from -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to be higher than 25 V. The measured rf characteristics of the MESFETs at a frequency of 900 MHz are the output power of 31.4 dBm and the power added efficiency of 63% at a drain bias of 4.7 V.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.529-531
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• 2005

This paper proposes a compact pulse generator fur NOx removal application for diesel automotive. The rising time is important factor to increase NOx removal efficiency in pulsed corona discharge method. Manufacturing cost and compactness of the pulse power generator should be satisfied for automotive application. The proposed pulse power uses a low voltage thyristor, a pulse transformer with the function of saturated magnetic switch, and series connected general diodes as opening switch to satisfy that requirements. With 200 resistor load, the experiment results show that the output voltage is 21kV, the rising time is about 21ns, and the pulse width (FWHM) is about 42ns.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1984-1986
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• 2000

In pulsed-power techniques. Marx generator is generally used for the high-power device. but this generator has insulation and spatial problems. So we will suggest a pulse transformer that has a small size to generate the high voltage pulse instead of Marx generator. In this paper, Pulse duration is 4 [${\mu}s$] and the ratio of input and output voltage is 40[kV]/200[kV](step-up ratio=5). The output voltage and the process of pulse compression for pulse circuit are simulated by EMTP (Electro-Magnetic Transient Program). The secondary voltage of pulse transformer is about 200[kV] and pulse width is 4[t/s]. When the secondary winding of the pulse transformer is saturated. the pulse width is 1.25[${\mu}s$]. We selected dummy load 50[$\Omega$] for impedance matching. The pulse voltage of dummy load is 100[kV] and pulse width is 500[ns].

• Journal of Energy Engineering
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• v.10 no.4
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• pp.363-369
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• 2001

Process design and performance evaluation were made for medium-size gasification combined/cogeneration plant. Based on the designed plant process configuration, the effects of $NO_x$ reduction techniques on the $NO_x$ emission, the power output, the efficiency and the stability of plant are investigated by applying various $NO_x$ reduction methods such as unsaturated/saturated nitrogen injection and fuel saturation of gas turbine combustor. The $NO_x$ reduction by nitrogen injection is more remarkable than that by fuel saturation, and its effect can be more enhanced by using saturated nitrogen. In addition, the applications of $NO_x$ reduction techniques accompany the improvement of plant power output and efficiency with the decrease of $NO_x$ emission, while it can cause unstable gas turbine operation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.12
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• pp.1069-1074
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• 2016

This paper presents a V-band two-stage power amplifier integrated circuit using TSMC 65 nm CMOS process. The simple input, output, and inter-stage matching networks based on passive components are integrated. By compensating for power gain characteristics using a pre-distortion technique, the linearity of the power amplifier was improved. The implemented two-stage power amplifier showed a power gain of 10.4 dB, a saturated output power of 9.7 dBm, and an efficiency of 20.8 % with a supply voltage of 1 V at the frequency band of 58.8 GHz.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.4
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• pp.67-72
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• 2022

This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.6 s.97
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• pp.580-585
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• 2005

Two high-efficiency and high power power-combing modules were developed using slotline-to-microstrip transition at V-band. Power-combining modules incorporating two MMIC power amplifiers demonstrated combining efficiencies higher than $80\%$(maximum $86\%$) with saturated output power of 22.96 dBm and 22.81 dBm, respectively. The measurement of back-to-back connected combiners demonstrated insertion loss less than 1.2 dB with return loss better than 15 dB around 60 GHz, respectively.