• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.768-771
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• 2001

Non-contacting capacitive sensor, based on principle of the cross capacitor, for measuring of $\mu\textrm{m}$-order displacements have been fabricated and characterized. To overcome disadvantages of the existed capacitive sensors of parallel type with 2-electrodes and 3-electrodes, the developed new sensor was designed to have 4-electrodes, two of them used high and low electrode the other two used as guard electrodes, on a sapphire plate with diameter 17 mm and thickness 0.7 mm, and are symmetrically situated with a constant gap of 0.2 mm between the electrodes. This sensor can be used for measuring the distance between sensor and target not only the metallic but also non-metallic target without ground connection.

• Tribology and Lubricants
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• v.35 no.6
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• pp.323-329
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• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Journal of the Korean Ceramic Society
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• v.25 no.2
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• pp.95-100
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• 1988

Single crystals of sapphire were grown from solution by slow cooling method using B2O3 and PbO as flux agents. The morphology of grown crystals was tube, rhombohedral, or hexagonal-plate. It was found that the morphology and the size of grown crystal were highly dependent on the amount of fluxes in the solution, the ratio of B2O3 vs. PbO, and cooling rate.

• Tribology and Lubricants
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• v.32 no.2
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• pp.44-49
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• 2016

Diamond mechanical polishing (DMP) is a crucial process in a sapphire wafering process to improve flatness and achieve the target thickness by using free abrasives. In a DMP process, material removal rate (MRR) is a key factor to reduce process time and cost. Controlling mechanical parameters, such as velocity and pressure, can increase the MRR in a DMP process. However, there are limitations of using high velocities and pressures for achieving a high MRR owing to their side effects. In this paper, we present the lapping characteristics and improvement of MRR by using a fixed abrasive plate through an experimental study. The change in MRR as a function of velocity and pressure follows Preston's equation. The surface roughness of a wafer decreases as the plate velocity and pressure increases. We observe a sharp decrease in MRR over the lapping time at a high velocity and pressure in the velocity and pressure test. An analysis of surface roughness (Rq and Rpk) indicates that wear of abrasives decreases the MRR sharply. In order to investigate the effect of abrasive wear on the MRR, we utilize a cutting fluid and a rough wafer. The cutting fluid delays the wear of abrasives resulting in improvement of MRR drop. The rough wafer maintains the MRR at a stable rate by self-dressing.

• Tribology and Lubricants
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• v.32 no.4
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• pp.119-124
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• 2016

In the sapphire wafering process, lapping is a crucial operation in order to reduce the damaged layer and achieve the target thickness. Many parameters, such as pressure, velocity, abrasive, slurry and plate, affect lapping characteristics. This paper presents an experimental investigation on the effect of the plate groove on the material removal rate and roughness of the wafer. We select the spiral pattern and rectangular type as the groove shapes. We vary the groove density by controlling the groove shape dimension, i.e., the groove width and pitch. As the groove density increases to 0.4, the material removal rate increases and gradually reaches a saturation point. When the groove density is low, the pressing load is mostly supported by the thick film, and only a small amount acts on the abrasives resulting to a low material removal rate. The roughness decreases on increasing the groove density up to 0.3 because thick film makes partial participations of large abrasives which make deep scratches. From these results, we could conclude that the groove affects the contact condition between the wafer and plate. At the same groove density, the pitch has more influence on reducing the film thickness than the groove width. By decreasing the groove density with a smaller pitch and larger groove width, we could achieve a high material removal rate and low roughness. These results would be helpful in understanding the groove effects and determining the appropriate groove design.

• Progress in Superconductivity
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• v.10 no.2
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• pp.116-122
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• 2009

We introduce a measurement method that enables to measure the penetration depth($\lambda$) of superconductor films by using a short-ended parallel plate sapphire resonator. Variations in the $\lambda$ of $MgB_2$ films could be measured down to the lowest temperature using a sapphire resonator with a $YBa_2Cu_3O_{7-x}$ film at the bottom. A model equation of $\lambda=\lambda_0[1-(T/T_c)^{\tau}]^{-1/2}$ for $MgB_2$ films appeared to describe the observed variations of the resonant frequency of the sapphire resonator with temperature, with $\lambda_0,\;\tau$, and $T_C$ used as the fitting parameters.

• Progress in Superconductivity
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• v.11 no.2
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• pp.106-111
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• 2010

Sapphire resonators with $YBa_2Cu_3O_{7-\delta}$ (YBCO) endplates have provided a way to realize extremely high quality factor due to the extremely low dielectric loss of sapphire and conductive loss of YBCO films, which enables to measure the low surface resistance of superconductor films at microwave frequencies. We present microwave properties of HTS sapphire resonators designed for measuring the surface resistance of HTS films at millimeter-wave frequencies by using the two-resonance mode dielectric resonator method. Despite enhanced surface resistance ($R_S$) of YBCO films due to the quadratic frequency dependence of the $R_S$, the unloaded quality factor ($Q_0$) of the $TE_{021}$ mode sapphire resonator still appears to be well above $1\;{\times}\;10^6$ at a mm-wave frequency of 38 GHz at 10 K. However, it appears that the $TE_{012}$ mode $Q_0$ is unexpectedly low despite that the corresponding resonance peak looks uncoupled with parasitic modes. We discuss possible reasons for the unexpected results using the surface resistance at the $TE_{021}$, $TE_{012}$, and $TE_{011}$ mode frequencies.

• Journal of the Optical Society of Korea
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• v.20 no.5
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• pp.593-600
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• 2016

Operation properties, such as output power, beam radius, and crystal temperature rise were investigated in a diode-pumped edge-cooled monolithic Yb:YAG laser with ~ 4 W pumping level. The output power showed saturation behavior because of severe temperature rise and poor spatial overlapping between pump beam and lasing mode. Face cooling geometry by using a sapphire plate was also investigated. No apparent saturation behavior in output power was observed due to the reduced temperature rise, which could be attributed to efficient heat removal through the crystal-sapphire interface.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.55 no.9
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• pp.443-448
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• 2006

Non-contacting capacitive sensor based on Thompson-Lampard theorem have been fabricated and characterized for measuring of 때 order displacements. To overcome disadvantages of the existed capacitive sensors of parallel plate type with 2-electrodes and 3-electrodes, the developed new sensor was designed to have 4-electrodes with a constant gap of 0.2mm between the electrodes. Two of the electrodes were used as a high potential electrode and a low one, the other two electrodes were used as guard electrodes. These electrodes were made from copper using RF sputtering system on a sapphire plate with diameter 17 mm and thickness 0.7 mm. This sensor can be used for measuring the distance not only between the sensor and metallic target connected to ground potential but also non-metallic target without ground connection.

• Journal of the Korean Society of Visualization
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• v.13 no.3
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• pp.20-23
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• 2015

In this experiment, a heterogeneous droplet consisted of de-ionized water and olive oil was made through two 31G injection needles. The injection flow rate was $50{\mu}{\ell}/min$ and the droplet size was 2 mm. The droplet was impinged onto a sapphire plate which was heated up to $300^{\circ}C$ by a heater. Two high speed cameras were used for visualization, and the frame rate was 20,000 fps. A 150W metal halite lamp was used for illumination. The dropping height was fixed to 20 mm and the corresponding Weber number was 10.6 based on water. Due to different boiling points of two liquids, partial boiling features of heterogeneous droplet was observed. At the Leidenfrost condition, micro explosion phenomenon has occurred.