• Journal of the Korean institute of surface engineering
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• v.53 no.3
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• pp.109-115
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• 2020

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH₄/H₂), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

• Korean Journal of Optics and Photonics
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• v.10 no.2
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• pp.157-161
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• 1999

A Ti:Sapphire laser pumped by the HCP has been designed and fabricated to study the optimal pumping conditions for lasing. The fluorescence energy converter LD-490 has been used. The result showed that the threshold energy of Ti:Sapphire laser is 1.39 KJ and the best efficiency is $7.13{\times}10^{-3}$% at the concentration $1.0{times}10^{-3}$ Mol/l of LD-490 dye. However, the efficiencies were decreased with the decrease of dye concentrations. The maximum output energy was obtained at 50 Torr Ar pressure, when the input voltage was 15 kV. As a convert dye, BBQ, was added to LD-490 with the rate of 1:1, the output energy was increased, whereas the thereshold energy was decreased as 1.17 kJ.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.656-661
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• 2002

Multipass Ti:sapphire amplifier for the light source of lidar was developed in an angular-multiplexing, and the characteristics of output energy and spectrum was investigated. In the two-stage multipass amplifier, we obtained the maximum output energy of 42 mJ, the amplification gain of 21 dB and the output efficiency of 26% on the wavelength of 790 nm. In the tuning range of 715~930nm the spectral linewidth is 0.05 $cm^{-1}$ /. The conversion efficiencies of 35% for SHG at 780 m and 13% for THG at 390 nm are obtained respectively. The continuous tunabilities of 240~306 m UV region and 360~460 nm in deep-blue region could be achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Tribology and Lubricants
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• v.37 no.6
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• pp.208-212
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• 2021

Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.234-237
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• 2007

We fabricated nano-structures of the anodic aluminum oxides on sapphire substrates. Two processes of nano-structured sapphire surface have present: the one is the template mask and the other is the anodic oxidized aluminum deposited on sapphire substrate. The formation of nano-structures has investigated by FE-SEM measurement. The etched surface by the template showed periodic lattice but the deposited surface showed the randomly distributed phase of nanoholes instead of the periodic lattice.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.341-344
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• 2006

LED chips are produced by cutting the sapphire on which GaN is evaporated. To cut the sapphire wafer into each LED chip, at first the wafer is scribed by diamond tool. To get the sharp groove shape for the nice cutting plane it is important the diamond tool shape, load, etc when the wafer is scribed. Here we tried to simulate the scribing process and get the scribing condition to reduce the wear rate of diamond tool for the sharp groove shape.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.355-356
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• 2008

The light extraction efficiencies of GaN-based light-emitting diodes (LEDs) grown on differently patterned sapphire substrates were investigated by using the ray tracing method. It was found that angle of the pattern surface against the sapphire surface, the number of pattern per unit area were important structural factors for high extraction efficiency.

• Journal of the Korean Ceramic Society
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• v.14 no.1
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• pp.19-24
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• 1977

상온에서 단결정 Sapphire가 충격에 의해서 파괴될 때에 수반되는 미세 조직변화에 대하여 관찰하였다. 파괴된 시편을 광학현미경으로 조사한 결과 cleavage는 주로 rhombohedral plane에서 일어나고 있음을 알았다. 그러나 관찰시료 파면의 양상을 박막(replica)으로 만들어 투과형 전자현미경으로 관찰한 결과로는 국부적으로 소성변화가 일어나고 있음을 알 수 있었다. 이러한 국부적인 소성변화는 crack의 진행을 저해하거나 또는 진로를 변경 시켜주므로 보다 높은 fracture energy를 유발시키는 원인이 됨을 알 수 있다.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.244-249
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• 1996

Multipass Ti:sapphire amplifier for the light source of DIAL was developed with an angular-multi-plexing, and the characteristics of output energy and spectra were investigated. As the characteristics of two-stage multipass amplifier, the maximum output energy was 22 mJ and the amplification gain was 20 dB on the wavelength of 790 nm. At that condition, output efficiency of the pumping energy was 18 percent. We obtained $0.15cm^{-1}$ (9.4 pm) as a spectral linewidth in the tuning range of 705~845 nm.