• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.37.2-37.2
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• 2011

The growth of three-dimensional ZnO hybrid structures by metal-organic chemical vapor deposition was controlled through their growth pressure. Vertically aligned ZnO nanorods were grown on c-plane sapphire substrate at $600^{\circ}C$ and 400 Torr. ZnO film was then formed in-situ on the ZnO nanorods at $600^{\circ}C$ and 10 Torr. High-resolution X-ray diffraction and transmission electron microscopy measurements showed that the ZnO film on the nanorods/sapphire grew epitaxially, and that the ZnO film/nanorods hybrid structures had well-ordered wurtzite structures. The hybrid ZnO structure was shown to be about 5 ${\mu}m$ by field-emission scanning electron microscopy. The hybrid structure showed better crystalline quality than mono-layer film on sapphire substrate. Consequently, purpose of this work is developing high quality hybrid epi-growth technology using nano structure. These structures have potential applicability as nanobuilding blocks in nanodevices.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1279_1280
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• 2009

Vanadium dioxide(VO2) has been reported to be the most attractive material for thermochromic windows due to its semiconductor-metal phase transition at around $68^{\circ}C$. However, our previous experiment showed it is difficult to grow VO2 thin films directly on glass substrate, whereas thermochromic VO2 thin films were successfully grown on R-cut sapphire substrate. Properties of VO2 thin films on different orientations of sapphire substrates were already reported. Furthermore, VO2 thin films were successfully grown heteroepitaxially on (001) preferred oriented ZnO coated glass. We deposited VO2 thin films using V2O5 targets on substrates with various lattice parameters with same orientation(SrTiO3, MgO, and Sapphire substrate of (001) orientation) by pulsed laser deposition. In this work, we will discuss the effects of lattice misfit, substrate-induced stress and grain size on the properties of VO2 thin films deposited on various substrate materials.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.147-151
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• 1999

YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1423-1428
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• 1994

TiO2 doped sapphire single crystals were grown by Verneuil method. The doping amount of TiO2 to Al2O3 were varied 0.1, 0.2, 0.3 wt% respectively. The grown crystals have reddish color and somewhat transparent. Optimum growth condition was established by changing growth rate and gas flow ratio. Growth condition are as follows; The flow rate range of oxygen ws 5.0~7.3 ι/min and that of hydrogen was 16~25ι/min and average growth rate was 6~8mm/hr. The basic cause of color appearence and defects in crystal were studied.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.759-762
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• 2003

The epitaxially grown Mg-doped GaN thin film was prepared by MOCVD (Metal Organic Chemical Vapor Deposition) for a SAW(Surface Acoustic Wave) filter. Mg-doped GaN thin film had enough properties for a SAW filter which include crystallinity and morphology. The surface morphology and crystalline of the Mg-doped GaN thin films were characterized using AFM and an X-ray rocking curve. The SAW filter, which was fabricated by lift-off process and frequency response, was measured by HP 8753C network analyzer. Center frequency was 96.687 MHz and SAW velocity was 5801 m/s when wavelength(λ) was 60${\mu}{\textrm}{m}$. Insertion loss was over -10 dB, Q was factor over 200, and side lobe attenuation was over 22 dB which was suitable for use as a SAW filter. Electro-mechanical coupling coefficient (k$^2$) was calculated from the measured data. k$^2$ was from 1 % to 1.44 %. The fabricated SAW filter using Mg-doped GaN/sapphire structure has good qualities as a filter and will be used as a SAW filter for operating RF frequency.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.155-159
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• 2000

YBCO step-edge dc SQUID magnetometers on sapphire substrates have been fabricated. CeO2 buffer layer and YBCO films were deposited in situ on the low angle (${\sim}$35$^{\circ}$) steps formed on the sapphire substrates. Typical 5-${\mu}$m-wide junction has R$_n$ of 5 ${\omega}$ and I$_c$ of 50 ${\mu}$A with large I$_c$R$_n$ product of 250 ${\mu}$V at 77K. According to applied bias current, depth of voltage modulation was changed and maximum voltage was measured 16 ${\mu}$V. Field noise of do SQUID was measured 100${\sim}$300 fT/${\surd}^{Hz}$ in the 1 $^{kHz}$, and about 1.5 pT/${\surd}^{Hz}$ in the 1/f region. For ac bias reversal method, field noise was decreased in the 1/f region. The QRS peak of magnetocardiogram was measured 50 pT in the magnetically shielded room.

• Progress in Superconductivity
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• v.5 no.2
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• pp.94-97
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• 2004

Step-edge Josephson junctions (SEJ) have been fabricated on sapphire substrates with in situ deposited films of CeO$_2$ buffer layer and YBa$_2$Cu$_3$O$_{7}$ films on the low angle steps. Direct coupled SQUID magnetometers with the SEJ were formed on 1 cm X 1 cm R-plane sapphire substrates. Typical 5-${\mu}{\textrm}{m}$-wide Josephson junctions have R$_{N}$ of 3 Ω and I$_{c}$ of 50 $mutextrm{A}$ at 77 K. The direct coupled SQUID magnetometers were designed to have pickup coils of 50-${\mu}{\textrm}{m}$-wide 16 parallel loops on the 1 cm X 1 cm substrates with outer dimension of 8.8 mm X 8.8 mm. The SEJ SQUID magnetometers exhibit relatively low 1/f noise even with dc bias control, and could be stably controlled by flux-locked loops in the magnetically disturbed environment. Field noise of the do SQUID was measured to be 200∼300 fT/Hz$^{1}$2/in the white noise region and about 2 pT/Hz$^{1}$2/ at 1 Hz when measured with dc bias method.hod.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.229-229
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• 2010

We report a high crystalline nonpolar a-plane (11-20) GaN on r-plane (1-102) sapphire substrates with $+0.15^{\circ}$, $-0.15^{\circ}$, $+0.2^{\circ}$, $-0.2^{\circ}$ and $+0.4^{\circ}$ misoriented by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 5 periods the nonpolar a-plane InGaN/GaN (a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN layers with double crystal x-ray diffraction. The FWHM values of $+0.4^{\circ}$ misoriented sapphire substrate were decreased down to 426 arc sec for $0^{\circ}$ and 531 arc sec for $-90^{\circ}$, respectively. Also, the samples were characterized by photoluminescence (PL).

• Progress in Superconductivity
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• v.1 no.2
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• pp.146-150
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• 2000

Step edge Josephson junctions in c-axis oriented $YBa_2Cu_3O_7$ films were fabricated on $CeO_2$ buffered sapphire substrates. The step angle was controlled in the wide range of $20^{\circ}\sim75^{\circ}$ by the Ar ion milling technique. I-V curves of junction fabricated on the thickness ratio of $\sim$0.8 and the step angle of $35^{\circ}$ were exhibited RSJ-like behavior with $I_CR_N$ product of $\sim250{\mu}A$ and critical current density of $\sim2\times10^4A/cm^2$ at 77 K. Critical current of step edge junction was increased linearly with decreasing temperature but the normal resistance was almost constant. Total samples of step edge Josephson junction was satisfied a scaling behavior of $I_CR_N{\propto}(J_C)^{0.5}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.51-51
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• 2011

We have grown nanocrystalline graphite on sapphire substrate by using solid carbon source molecular beam epitaxy. Changes of structure from amorphous carbon to nanocrystalline graphite controlled by the growth temperature have been investigated by Raman spectroscopy. Raman spectra show D, G, and 2D peaks, whose intensities vary on the growth temperature. Atomic force microscopy reveals that the surface is very flat. Sapphire substrates of different cutting direction produce similar results. Simulations suggest that the interaction between carbon and oxygen causes disorders. Electrical transport measurements exhibit a Dirac-like peak, including a carrier type change by an external gate voltage bias.