• Journal of Multimedia Information System
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• v.5 no.2
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• pp.139-142
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• 2018

This work presents a novel architecture of phase locked loop (PLL) with the current compensating scheme to improve phase noise characteristic. The proposed PLL has two charge pumps (CP), main-CP (MCP) and sub-CP (SCP). The smaller SCP current with same time duration but opposite direction of UP/DN MCP current is injected to the loop filter (LF). It suppresses the voltage fluctuation of LF. The PLL has a novel voltage controlled oscillator (VCO) consisting of a voltage controlled resistor (VCR) and the three-stage ring oscillator with latch type delay cells. The VCR linearly converts voltage into current, and the latch type delay cell has short active on-time of transistors. As a result, it improves phase noise characteristic. The proposed PLL has been fabricated with $0.35{\mu}m$ 3.3 V CMOS process. Measured phase noise at 1 MHz offset is -103 dBc/Hz resulting in 3 dBc/Hz phase noise improvement compared to the conventional PLL.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.49-55
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• 2005

In this paper, the phase locked harmonic oscillator(PLHO) using the analog PLL(Phase Locked Loop) is designed and implemented for a wireless LAN system. The harmonic oscillator is consisted of a ring resonator, a varactor diode and a PLL circuit. Because the fundamental fiequency of 8.5 GHz is used as the feedback signal for the PLL and the 2nd harmonic of 17.0 GHz is used as the output, a analog frequency divider for the phase comparison in the PLL system can be omitted. For the simple PLL circuit, the SPD(Sampling Phase Detector) as a phase comparator is used. The output power of the phase locked harmonic oscillator is 2.23 dBm at 17 GHz. The fundamental and 3rd harmonic suppressions are -31.5 dBc and -29.0 dBc, respectively. The measured phase noise characteristics are -87.6 dBc/Hz and -95.4 dBc/Hz at the of offset frequency of 1 kHz and 10 kHz from the carrier, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.28-33
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• 2006

An integrated 3.125Gbps clock and data recovery (CDR) circuit is presented. The circuit does not need a reference clock. It has a phase and frequency detector (PFD), which incorporates a bang-bang type 4X oversampling PD and a rotational frequency detector (FD). It also has a ring oscillator type VCO with four delay stages and three zero-offset charge pumps. With a proposed PD and m, the tracking range of 24% can be achieved. Experimental results show that the circuit is capable of recovering clock and data at rates of 3.125Gbps with 0.18 um CMOS technology. The measured recovered clock jitter (p-p) is about 14ps. The CDR has 1.8volt single power supply. The power dissipation is about 140mW.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.2
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• pp.25-34
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• 2010

This paper proposed a high-speed voltage-controlled ring-oscillator(VCRO) using a frequency doubling technique. The design of the proposed oscillator has been based on TSMC 0.18um 1.8V CMOS technology. The frequency doubling technique is achieved by AND-OR operations with 4 signals which have $90^{\circ}$ phase difference one another in one cycle. The proposed technique has been implemented using a 4-stage differential oscillator compose of differential latched inverters and NAND gates for AND and OR operations. The differential ring-oscillator can generate 4 output signals, which are $90^{\circ}$ out-of-phase one another, with low phase noise. The ANP-OR operations needed in the proposed technique are implemented using NAND gates, which is more area-efficient and provides faster switching speed than using NOR gates. Simulation results show that the proposed, VCRO operates in the frequency range of 3.72 GHz to 8 GHz with power consumption of 4.7mW at 4GHz and phase noise of ~-86.79dBc/Hz at 1MHz offset. Therefore, the proposed oscillator demonstrates superior performance compared with previous high-speed voltage-controlled ring-oscillators and can be used to build high-performance frequency synthesizers and phase-locked loops for radio-frequency applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.19-24
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• 2007

With recent advancement of high-speed, multi-gigabit data transmission capabilities, serial links have been more widely adopted in industry than parallel links. Since the parallel link design forces its transmitter to transmit both the data and the clock to the receiver at the same time, it leads to hardware's intricacy during high-speed data transmission, large power consumption, and high cost. Meanwhile, the serial links allows the transmitter to transmit data only with no synchronized clock information. For the purpose, clock and data recovery circuit becomes a very crucial key block. In this paper, a 5.4Gbps half-rate bang-bang CDR is designed for the applications of high-speed graphic DRAM interface. The CDR consists of a half-rate bang-bang phase detector, a current-mirror charge-pump, a 2nd-order loop filter, and a 4-stage differential ring-type VCO. The PD automatically retimes and demultiplexes the data, generating two 2.7Gb/s sequences. The proposed circuit is realized in 66㎚ CMOS process. With input pseudo-random bit sequences (PRBS) of $2^{13}-1$, the post-layout simulations show 10psRMS clock jitter and $40ps_{p-p}$ retimed data jitter characteristics, and also the power dissipation of 80mW from a single 1.8V supply.