• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.91-92
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• 2006

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering system. The electrical resistivity of AZO films was $1.81{\times}10^{-2}{\Omega}cm$ and the average transmittance in the visible range 400-800 nm was more than 76% Organic light-emitting diodes (OLEDs) with AZO/TPD/$Alq_3$/Al configuration were fabricated. The current density-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.140-144
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• 2003

To investigate failure analysis of surface acoustic wave (SAW) filter for radio frequency, high temperature storage test was carried out. The failure criteria were insertion loss at passband and rejection level at stopband. As a result, the insertion loss at passband increase about 4 dB was due to damages of interdigital transducer (IDT). That is caused by poor adhesion between metal electrode(AI) and piezoelectric substrate and defects on a manufacturing process. This result indicates that good adhesion between electrode and ceramic substrate is important factor And also we investigated the demage factors of electrode. Screen possible of saw filter using high temperature storage test(HTOL) in the manufacturing phase be presented.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.105-110
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• 2009

IZO thin films have been deposited on poly(ethylene terephthalate) flexible substrate under varying radio frequency (rf) power, process pressure and thickness of IZO films using rf magnetron sputtering under $Ar/O_2$ gas mix. As the process pressure increased, the deposition rate was slightly increased and the transmittance showed little change, but the resistivity was increased. With increasing rf power, the great increase in deposition rate was observed but the transmittance showed a slight change only, and the resistivity was decreased. In addition, an attempt was made to find the optimal thickness of IZO films under varying the thickness of IZO films at the process conditions of 1 mTorr pressure and 90 W rf power, which showed lowest resistivity. IZO thin films with the thickness of $1,500{\AA}$ showed lowest resistivity and also showed highest transmittance around the wavelength zone of the maximum absorption. The power conversion efficiency of solar cells fabricated using various transparent electrodes with different thicknesses were measured and the solar cell with IZO electrode of $1,500{\AA}$ showed the maximum conversion-efficiency of 2.88 %.

• Journal of the Semiconductor & Display Technology
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• v.12 no.1
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• 한국전기화학회:학술대회논문집
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• 2002.04a
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• pp.39-39
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.42-42
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• 1998

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.7
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• pp.8-13
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• 2009

Plasma enhanced chemical vapor deposition (PECVD) is commonly used for Carbon nanotubes (CNTs) fabrication, and the process can easily be applied to industrial production lines. In this works, we developed novel magnetized radio frequency PECVD system for one line process of CNTs fabrication for charge storable electrode application. The system incorporates aspects of physical and chemical vapor deposition using capacitive coupled RF plasma and magnetic confinement coils. Using this magnetized RF-PECVD system, we firstly deposited Fe layer (about 200[nm]) on Si substrate by sputter method at the temperature of 300[$^{\circ}$] and hence prepared CNTs on the Fe catalyst layer and investigated fundamental properties by scanning electron microscopy (SEM) and Raman spectroscopy (RS). High-density, aligned CNTs can be grown on Fe/Si substrates at the temperature of 600[$^{\circ}$] or less.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.3
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• pp.588-593
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• 2010

Sputter deposition on a Pt counter electrode was studied using radio frequency (RF) plasma as the improvement of incident photon to current conversion efficiency (IPCE) for dye-sensitized solar cells (DSCs). Effects of the sputtering thickness and the incident angle on a Pt counter electrode for DSCs were investigated. Experiments to get the optimal sputtering time for the performance of the DSCs were carried out. And it is found that the optimized sputtering time was 120 seconds, in addition, the incident angles of the substrate was adjusted from $0^{\circ}$ to $60^{\circ}$. The maximum efficiency of 5.37% was obtained at the incident angle of $40^{\circ}$ with an active cell area of $1cm^2$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.910-914
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• 2007

Recently, a study on the energy conversion efficiency and up sizing' technology of dye-sensitized solar cell (DSC) which is focused in considering a new alternative solar cell has been executed. But consideration for the cell characteristics about an internal electronic flow on a large-scaled DSC has not been carried out yet. In this study, we have chosen a solar cell width as a variable of a large-scaled DSCs and confirmed electric characteristics of an individual cell. First, Pt counter electrode surface of DSC is deposited by RF sputtering methode and the electrochemical properties of Pt electrodes was investigated by cyclic -voltammetry. With the Pt electrode, we fabricated DSC samples of different width. As a result, the higher the internal resistance of DSC becomes, the wider the width gets. Internal resistance makes it difficult to collect photoelectron generated from dye. Ultimately up sizing DSC causes the increase of internal resistance and then has a bad effect on the cell characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.553-558
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• 2003

The A S $r_{0.7}$B $i_{2.6}$T $a_2$ $O_{9}$ (SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/$SiO_2$/Si) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 75$0^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represent a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40C/$\textrm{cm}^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.8110$^{-10}$ A/$\textrm{cm}^2$, respectively.y.y.