• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.94-97
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• 2003

This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.133-133
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• 2002

• 한국전기화학회:학술대회논문집
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• 2000.10a
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• pp.29-29
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• 2000

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.133-137
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• 2005

A photonic RF true-time delay using a tapered chirped fiber Bragg grating coated with a heating electrode has been proposed and fabricated. For an RF signal carried over an optical signal, the time delay has been achieved by controlling the voltage applied to the electrode and thus adjusting its reflection positions from the fiber grating through the thermooptic effect. It features continuous voltage-controlled operation, requiring no mechanical perturbation and no moving parts. The measured time delay was about 120 ps with the electrical power consumption of $250{\cal}mW$.

• Korean Journal of Optics and Photonics
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• v.15 no.6
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• pp.591-596
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• 2004

In this paper, a photonic RF true-time delay based on a partially side-polished fiber Bragg grating with heating electrode has been proposed and fabricated. It features continuous voltage-controlled operation, requiring no mechanical perturbation and no moving parts. For an RF signal carried over an optical signal, the time delay has been obtained by controlling the voltage applied to the electrode and thus adjusting its reflection positions from the fiber grating via the thermooptic effect. The achieved time delay is about 100 ps with the electrical power consumption of 280 mW.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.15-19
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• 2003

In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1838-1840
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• 1996

In order to study the relationship between the physical properties of glow discharge plasma and the physical behavior of TiN thin film, electrical characteristics of RF discharge plasma driven at 13.56MHz in a parallel-plate electrode system were measured. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors deciding the physical properties of TiN thin film under given conditions of applied biasd voltage and pressure. The TiN thin film were fabricated over a wide range of discharge conditions, and some of the general relationships between the measured plasma parameters and the properties of TiN thin film were discussed.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.570-572
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• 2000

The characteristics of ozone generation were investigated in accordance with varying the diameter of internal electrode in an ozonizer using RF power source. The characteristics of ozone generation were improved with the diameter of internal electrode increased, but thermal loss was increased. Therefore, it was found that it is inevitable that the cooler has to be installed in an ozonizer which uses RF power source.