• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 동계학술발표회 논문집
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• pp.293-294
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• 2009

The spectral responsivity of solar cells has been measured under high background irradiance using an LED-based differential spectral responsivity Comparator (DSR-C). The comparator developed is fully automated and has some advantages: It does not need a chopper to modulate the light. Unlike the conventional method, it does not require a monochromator to select wavelength. It covers a wavelength range up to 1200 nm. The wavelength range of the comparator is limited by the spectral power distribution of the LEDs and the spectral responsivity of the standard detector. An active temperature control was utilized to meet the specified standard conditions of solar cell test. This work shows the effect of different levels of background irradiance on the spectral responsivity and the importance of same background irradiance for solar cell test as specified by the corresponding standard.

• 전자공학회지
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• 제30권5호
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• pp.499-508
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• 2003

실제 실험에 사용한 대표적인 InAs/GaAs QUDIP에 대해서 detector를 평가하는데 사용하는 responsitity D*뿐만 아니라 이두 값을 좌우하는 phottoconductive gain 양자효율 noise current에 대해 정량적으로 살펴보고 QWIP와 비교해보았다 우선 가장 중요한 것은 QDIP의 온도가 약 10K에서 거의 200K까지 올라가도 responsivity와 D* 모두 온도에 따라 민감하게감소하지 않는다는 사실이다(거의 10배 정도만 감소했음). 이러한 측정결과는 QDIP의 가장 큰 장점인 실온 동작 가능성이 아주 높음을 확인시켜 준다. 참고로, 이미 사용되고 있는 QWIP나 MCT detector는 낮은 온도 영역에서도 온도가 증가함에 따라 responsivity와 D*가 민감하게 감소해서 77K 이상에서는 동작하지 않는다. 두번째로, QWIP는 시료의 표면에 수직 입사되는 IR에 반응하지 않는데, QDIP는 시료의 표면에 수직 입사되는 IR에도 잘 반응함을 확인하였다. 이러한 두 가지 특성은 QDIP가 가질 것이라고 예상되던 QDIP의 가장 큰 장점으로, QDIP가 mid IR이나 far IR detector로서의 전망이 아주 밝음을 보여준다. 저온에서 QDIP의 responsivity는 수 A/W 로, 보통의 QWIP의 responsivity가 수십 mA/W인 것을 고려할 때, 충분히 큰 값이었다. QDIP의 responsivity가 이렇게 큰 이유는 photo-conductive gain이 1000 이상으로 매우 컸기 때문이었다. 반면에, 양자효율은 0.01% 이하로 아주 작았는데, 이것은 흡수 계수 자체보다는 흡수 두께가 작기 때문인 것 같고, 따라서 QDIP의 주기 수를 늘릴 필요가 있음을 알았다. Detector를 평가하는데 가장 중요한 것은 responsivity보다는 D*인데, photoconductive gain과 양자효율의 곱에 비례하는 responsivity는 $\sim$A/W로 충분히 컸지만, 반면에 D*는 $\sim$2E8으로 QWIP에 비해 작았다. 이것은 noise current가 컸기 때문이며 이를 줄이는 것이 중요하다. Noise current의 주된 요인이 dark current에 비례하는 g-r noise이므로, dark current를 줄이는 구조가 필요하다. 대표적인 예가 AlGaAs 같은 additional barrier를 넣어 dark current를 줄이는 방법이다. QDIP의 주기 수를 늘리는 것도 dark current를 줄이는 데 도움이 될 것이다.

• 대한전자공학회논문지SD
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• 제42권3호
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• pp.17-24
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• 2005

본 논문에서는 단일모드 광섬유를 부착한 analog용 PIN-Photodiode를 제작하고 소자의 특성을 분석하였다. 제작된 analog 용 PIN-photodiode의 대역폭은 1.5 GHz이였으며, 암전류는 20 pA이고, 정전용량은 0.48 pF이였으며, 응답도(responsivity)는 0.9 V/W 이고, 2차 상호변조(IM2, second order distortion)는 -72 dBc이였다. 본 논문에서는 응답도와 IM2 특성을 실시간으로 모니터링하며 정렬하는 새로운 광 패키징 기술을 개발하였다. 그 결과 응답도는 0.03 V/W 향상되었으며, IM2는 $3\~5dBc$ 향상 되었고, 부적합 발생률도 $3.5\%$ 감소하였다.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.104-105
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• 2003

We have fabricated a side-illuminated p-i-n photodetectors with evanescently-coupled waveguides for surface hybrid integration in low-cost modules. We adopted WGPD of evanescently-coupled type to have high responsivity and coupling tolerance, and to avoid any reliability problem. This proposed photodetectors have a high responsivity of 1.10 A／W at a wavelength of 1.55 ${\mu}{\textrm}{m}$. The 1dB coupling tolerance to cleaved fiber and photodetectors is $\pm$3.5 ${\mu}{\textrm}{m}$ in the vertical direction and $\pm$11 ${\mu}{\textrm}{m}$ in the horizontal direction.

• 센서학회지
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• 제27권5호
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• pp.335-339
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• 2018

The optical characteristics of a terahertz (THz) antenna-coupled bolometer (ACB) detector were evaluated using a pulsed quantum cascade laser (QCL) and radiation blackbody sources. We investigated a method for measuring the responsivity and noise-equivalent power (NEP) of the THz detector using two different types of light sources. When using a QCL source with a frequency of 3 THz, the average responsivity of 24 devices was $1.44{\times}10^3V/W$ and the average NEP of those devices was $3.33{\times}10^{-9}W/{\surd}Hz$. The average responsivity and NEP as measured by blackbody source were $1.79{\times}10^5V/W$ and $6.51{\times}10^{-11}W/{\surd}Hz$, respectively, with the measured values varying depending on the light source. This was because the output power of each light source was different, with the laser source being driven by a pulse type wave and the blackbody source being driven by a continuous wave. The power input to the THz sensor was also different. Futhermore, the responsivity and NEP values measured using band pass filter (BPF) were similar to those measured when using only THz windows. It was found that ACB sensor responds normally in the THz region to both the laser and the blackbody source, and the method was confirmed to effectively evaluate the characteristics of the THz sensor.

• 대한전자공학회논문지SD
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• 제39권10호
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• pp.35-42
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• 2002

Modulation frequency dependences of the pyroelectric properties of PLT (P $b_{1-x}$ L $a_{x}$ $Ti_{1-x}$ 4/ $O_3$) thin films with La concentrations of 5, 10 and 15㏖% have been investigated by using the dynamic method. The PLT thin film with 10㏖% of the La concentration (PLT(10) thin film) shows the most excellent pyroelectric properties among the films. For PLT(10) thin film, the pyroelectric coefficient shows the maximum value of 6.6$\times$10$^{-9}$ C/$\textrm{cm}^2$ㆍK without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03$\times$10$^{-11}$ Cㆍcm/J and 1.46$\times$10$^{-9}$ Cㆍcm/J, respectively. Voltage responsivity corresponding to the pyroelectric voltage is almost constant at low modulation frequency and decreases in proportional to frequency at high modulation frequency. Voltage responsivity is 5.15 V/W at 8Hz. Noise equivalent power (NEP) and specific detectivity ( $D^{*}$) of the PLT(10) thin film are 9.93$\times$10$^{-8}$ W/H $z^{1}$2/ and 1.81$\times$10$^{6}$ cmH $z^{1}$2/W at the frequency of 100Hz, respectively. The results indicate that PLT(10) thin film is very suitable for pyroelectric IR sensors.s.s.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1121-1124
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• 2003

PZT(30/70) thick film was fabricated by using 1,3 propanediol-based sol-gel method. Prepared film of pyroelectric property was investigated by Dynamic method of modulation frequency dependence. Pyroelectric coefficient was obtained about 5.0$\times$10$^{-8}$ C/$\textrm{cm}^2$.K. The figure of merits for voltage responsivity and specific detectivity were 3.4$\times$10$^{-11}$ C.cm/J and 5.9$\times$10$^{-9}$ C.cm/J, respectively, because of relative high-dielectric constant and high-pyroelectric coefficient. Voltage responsivity was increased at low modulation frequency and it was decreased at high modulation frequency. Voltage responsivity was maximum 1.84 V/W at 10 Hz. As Johnson noise is dominant, Noise voltage was increased nearly proportional to f$^{-1}$ 2/. Noise equivalent power and specific detectivity were 2.83$\times$10$^{-7}$ W/Hz$^{1}$2/ and 3.13$\times$10$^{5}$ cm.Hz$^{1}$2//W the same frequency at 80 Hz, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.343-344
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• 2008

A surface micromachined uncooled microbolometer based on the amorphous silicon was designed, fabricated, and characterized. We designed the microbolometer with a pixel size of $44\times44{\mu}m^2$ and a fill factor of about 50 % ~ 70% by considering such important factors as the thermal conductance, thermal time constant, the temperature coefficient of resistance, and device resistance. Also, we successfully fabricated the microbolometer by using surface MEMS technology. Finally, we investigated responsivity and detectivity properties depends on the active area size.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.387.1-387.1
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• 2014

A new class of temperature-sensing materials is demonstrated along with their integration into transparent and flexible field-effect transistor (FET) temperature sensors with high thermal responsivity, stability, and reproducibility. The novelty of this particular type of temperature sensor is the incorporation of an R-GO/P(VDF-TrFE) nanocomposite channel as a sensing layer that is highly responsive to temperature, and is optically transparent and mechanically flexible. Furthermore, the nanocomposite sensing layer is easily coated onto flexible substrates for the fabrication of transparent and flexible FETs using a simple spin-coating method. The transparent and flexible nanocomposite FETs are capable of detecting an extremely small temperature change as small as $0.1^{\circ}C$ and are highly responsive to human body temperature. Temperature responsivity and optical transmittance of transparent nanocomposite FETs were adjustable and tuneable by changing the thickness and R-GO concentration of the nanocomposite.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.