• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1453-1455
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• 1998

$Ba(Mg,Ta)O_3-Ba(Co,Nb)O_3$ ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of 1500-$1575^{\circ}C$ for 5[hr.] in air. The crystal structure was investigated by the XRD. The microstructure of the ceramics were observed by SEM. The microwave properties of dielectric resonators were investigated as a function of composition and sintering temperature. $Ba(Mg,Ta)O_3-Ba(Co,Nb)O_3$ ceramics have a structure of complex perovskite type, and have peaks of (101),(102),(201),(202) and (212). In the case of the $0.7Ba(Mg,Ta)O_3-0.3Ba(Co,Nb)O_3$ ceramic resonator, dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF, ${\tau}_l$) were a good value of 26.5, 11.500 at 10[GHz] and -1.3[ppm/$^{\circ}C$] from $25^{\circ}C$ to $60^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.610-614
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• 2005

In this paper, simple AT-cut crystal resonator utilizing $Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3$ relaxator ceramics as load capacitator were designed and their frequency-temperature characteristics were investigated. In order to modify temperature dependance of dielectric constant, $Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3$ ceramics were manufactured with the variations in Sr substitution. At the composition with $6\;mol\%$ Sr substitution as load capacitator, frequency-temperature characteristics of AT-cut crystal resonators with the series load capacitance were similarly varied as those of cut orientation variation, and also compensated.

• ETRI Journal
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• 제31권4호
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• pp.478-480
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• 2009

The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 ${\mu}m$ CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a $48{\times}10^8$ resonant frequency-quality factor product ($Q{\times}f_{res}$) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators.

• 한국음향학회지
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• 제14권5호
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• pp.83-88
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• 1995

압전 세라믹의 재료 정수 규명의 일반적인 방댄은 어떤 형상과 분극 방향을 가진 진동체의 동특성을 이용하는 것이다. 본 논문에서는 압전 세라리의 복소 재료 정수극 규명하는 방법을 제시하였다. 이 방법은 이론적인 이미턴스 값과 실험으로 측정된 값과의 오차가 최소화 되도록 하는 비선형 최적화 기법을 사용하여 손실이 고려된 복소 압전 재료 정수를 규명하는 것이다. 재료 정수 규명을 위하여 이미턴스(Immittance)를 공진 주파수 근처와 저주파 영역을 포함하여 측정한 값을 동시에 활용하였다. 본 논문에서 제안된 방법을 검증하기 위해 PZT4 세라믹의 복소 재료 정수를 실험적으로 규명하였다.

• 마이크로전자및패키징학회지
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• 제15권1호
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• pp.39-44
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• 2008

In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2004년도 춘계학술대회논문집
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• pp.780-783
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• 2004

Recently Intake noise has been extensively studied to reduce the engine noise. In order to diminish intake noise several resonators were added to the intake system. However this can cause a reduction of engine output power and an increase of fuel consumption. In this study, active noise control simulation of the Filtered-x LMS algorithm is applied real instrumentation intake noise data under rapid acceleration because intake noise is more excessively increased under the such a harsh condition. But the FXLMS algorithm has poor control performance when the system is disturbed. Thus modified FXLMS algorithm using L-point running average filter is developed to improve the control performance under the rapid acceleration and disturbance. The noise reduction quantity of modified Filtered-x LMS algorithm is more than original one in two cases. In the case of control for real instrumentation intake noise data, maximum residual noise of modified FXLMS algorithm is 2.5 times less than applied the FXLMS and also in the case of disturbed, the modified FXLMS algorithm shows excellent control performance but FXLMS algorithm cat not control.

• 전자공학회논문지
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• 제52권12호
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• pp.41-45
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• 2015

본 논문에서는 이중대역에서 동작하는 자기공진 방식 무선전력전송 공진기를 제안하였다. 제안한 공진기는 MF-대역과 HF-대역에서 동작하도록 설계하였다. 제안한 공진기는 20턴의 코일과 사각형 모양의 코일, 양면의 정합회로, 집중소자, 하나의 포트로 구성되어있다. 정합회로의 양면은 비아 홀을 이용하여 연결하고 하나의 포트에서 동작하도록 하였다. 같은 구조의 공진기 두 개를 이용하여 무선전력전송 특성을 모의실험 하였다. 그리고 모의실험결과를 기반으로 효율 식을 이용하여 전력전송효율 또한 계산되었다. 제안한 두 공진기는 거리 100 mm 에서 모의실험 하였고, 전력전송 효율은 MF와 HF-대역 모두 60 % 이상의 효율을 가지는 것을 확인하였다.

• 한국전자파학회논문지
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• 제11권3호
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• pp.379-387
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• 2000

본 논문에서는 단일 안테나를 가지고 광대역의 위성통신 신호를 송수신하기 위하여 12.5 GHz와 14.25 GHz 대 역에서 각각 동작하고, 두 대역에서 서로 다른 선형편파 특성과 광대역 특성을 얻을 수 있는 적층 구조의 광대역 이중공진 이중편파 안테나를 제안하였다. 이 때 상대 급전선에 의한 임피던스 변화를 최소화시켜 최적의 안테나 를 설계하였으며, 배열 안테나로 확장시 이중급전 구조의 문제점인 공간상의 문제를 해결하기 위해서 마이크로 스트립 선로와 via-hole 혼합급전 방식을 사용하였다. 제안된 안테나를 광대역 이중공진 이중편파 $2\times2$ 배열 안 테나로 설계 및 제작하였고, 방사패턴과 주파수특성을 측정하여 위성통신 송수신 겸용 광대역 안테나로 잘 동작 할 수 있음을 확인하였다.

• 한국전자파학회논문지
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• 제24권2호
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• pp.122-127
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• 2013

본 논문에서는 적층형 유전체 도파관 필터를 제안한다. 횡 방향으로 공진부가 연결되는 유전체 도파관 필터는 단수가 증가함에 따라 길이가 증가하여 제작시 어려움이 따른다. 제안된 구조는 세라믹을 이용하여 일부 공진부를 적층 형태로 변경하여 설계 제작한 것이다. 상대 유전율이 22인 세라믹을 이용하여 기존의 도파관 필터보다 25 % 정도 크기가 줄었으며, SMD 형태로 PCB에 표면 실장이 가능하도록 하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.27.2-27.2
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• 2010

In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.