• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.27-31
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• 2004

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

• 한국초전도ㆍ저온공학회논문지
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• 제16권1호
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• pp.1-5
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• 2014

We calculated the resonance tunneling energy band in the BCS gap for Type-II superconductor in which periodic potential is generated by external magnetic flux. In this model, penetrating magnetic flux was assumed to be in a fixed lattice state which is not moving by an external force. We observed the existence of two subbands when we used the same parameters as for the $Nd_{1.85}Ce_{0.15}CuO_X$ thin film experiment. The voltages at which the regions of negative differential resistivity (NDR) started after the resonant tunneling ended were in a good agreement with the experimental data in the field region of 1 T - 2.2 T, but not in the high field regions. Discrepancy occurred in the high field region is considered to be caused by that the potential barrier could not be maintained because the current induced by resonant tunneling exceeds the superconducting critical current. In order to have better agreement in the low field region, more concrete designing of the potential rather than a simple square well used in the calculation might be needed. Based on this result, we can predict an occurrence of the electromagnetic radiation of as much difference of energy caused by the 2nd order resonant tunneling in which electrons transit from the 2nd band to the 1st band in the potential wells.

• 한국통신학회논문지
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• 제18권7호
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• pp.1036-1043
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• 1993

대기압 MOCVD방법으로 이중 장벽 구조의 공명 투과 소자를 제작하여 상온과 77K에서의 부저항 특성을 특정하였다. GaAs 양자 우물과 spacer, AIGaAs 장벽을 사용하여 성장온도를 변화시켜 공명 투과 소자를 제작한 결과 상온에서 2.35, 77K에서 15.3의 높은 peak-to-valley 전류비를 얻었다 컴퓨터 모의 실험에서는 coherent 투과만을 고려하여 peak 전류를 계산해서 실험치와 잘 일치하는 것을 알 수 있었다. AlGaAs 장벽에 InGaAs 양자 우물과 spacer를 사용하여 전자의 공급량을 증가시킨 구조에서는 상온에서 8.6KA/cm의 높은 peak 전류와 4.0의 큰 peak-to-valley 전류비를 얻었다.

• 전자공학회논문지A
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• 제33A권10호
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• pp.139-143
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• 1996

We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.

• 전자공학회논문지D
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• 제34D권4호
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• pp.27-32
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• 1997

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current desnity ( $J_{p}$) for the accurate digital switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of I $n_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As heterojunction on the InP substrate, is fabricated ot improve PVCR and JP, and then the dependence of I-V charcteristics on the width of the quantum well was investigated.d.ted.d.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1456-1458
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• 1996

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current density ($J_p$) for the accurate switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of $In_{0.53}Ga_{0.47}As/ln_{0.52}Al_{0.48}As$ heterojunction on the InP substrate, is suggested to improve the PVCR and $J_p$ through the narrowed tunnel barriers. As the result, the measured I-V curves showed the PVCR over 60.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• 전자공학회논문지A
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• 제29A권1호
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• pp.19-24
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• 1992

The analysis of the resonant tunneling based on the exact solution of Schrodinger equations is performed in a single quantum well structure under applied bias. The transmittivity and the net tunneling current density are calculated with Airy function and the boundary conditions which is suggested by Bastard. The results are compared with those from other methods and boundary conditions. From the calculated J-V characteristics for the tunneling current, the dependence of the voltage location showing the first peak current on the various temperatures and Fermi level is investigated. In addition, the wave function within the structure is obtained and compared with that from the flat-potential model.

• 한국진공학회지
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• 제1권1호
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• pp.134-138
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• 1992

GaAs/AlAs 이중장벽 구조를 MBE(Molecular Beam Epitaxy)법으로 성장하여, mesa diode를 제작하고 전류전압 특성을 측정하였다. 계면은 평탄한 이중장벽 구조로 성장 되었음이 확인되었으며, 실온에서 장벽의 두께가 변화함에 따라 PVCR(Peak to Valley Current Ratio)의 값은 크게 변하지 않았다. 이는 장벽의 두께가 증가함에 따라 nonresonant tunneling에 의한 valley current가 크게 증가함에 기인한다.

• 한국광학회:학술대회논문집
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• 한국광학회 2005년도 제16회 정기총회 및 동계학술발표회
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• pp.180-181
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• 2005