• Title/Summary/Keyword: resistor

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Stabilization of Thermo Electromotive Force of Power Type Shunt Resistor for Mass Storage Secondary Battery Management System (대용량 이차전지 관리 시스템용 전력형 션트저항의 열기전력 안정화)

  • Kim, Eun Min;Lee, Sunwoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.6
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    • pp.376-380
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    • 2017
  • In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (${\pm}1%$ of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at $60^{\circ}C$); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at $25^{\circ}C$). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.

Study on irradiation effect by $Co^{60}$ to the carbon resistor (탄소저항체에 대한 $Co^{60}$조사효과에 관한 연구)

  • 지철근;조성욱
    • 전기의세계
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    • v.22 no.4
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    • pp.7-10
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    • 1973
  • The characteristics of all the instruments and materials used in atomic industry is changed due to radiation damages by the effects of radiation activities. In this study, when the Carbon Resistor, main element of electrical circuits, is irradiated by Gamma-Ray, variations in its electrical properties have been investigated. The following results are obtained: 1) The resistance value in Carbon Resistor is exponentially increased as the quantity of irradiation by Gamma-Ray is increased, but in case of more than 10$^{6}$ R/hr. of quantity of irradiation it has saturated-state value. 2) The rate of change inrestistance value has been independent on the intensity of Gamma-Ray source when Carbon Resistor is irradiated in the same quantity of irradiation. 3) The resistance value in irradiated Carbon Resistor has not been varied with elapse of time. 4) The more the distance from the Carbon Resistor to the Gamma-Ray source the more greatly the resistance value is decreased and that it has been shown that the more quantity of irradiation by Gamma-Ray, the greater the rate of decrease in resistance value. Through the above results it has been concluded that the measurement values obtained by the high-precision instruments in the radiation field have to be corrected with proper consideration to radiation damages.

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Effect of Lead Free Glass Frit Compositions on Properties of Ag System Conductor and RuO2 Based Resistor Pastes (Ag계 도체 및 RuO2계 저항체 페이스트의 특성에 미치는 무연계 글라스 프릿트 조성의 영향)

  • Koo, Bon-Keup
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.3
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    • pp.200-207
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    • 2011
  • Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

A Study on the Limited Rate Power Capacity for Applications for Precision Passive Devices Based on Carbon Nanotube Materials (탄소나노튜브 소재의 정밀 수동소자 적용을 위한 한계 정격전력 용량에 관한 연구)

  • Lee, Sunwoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.3
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    • pp.269-274
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    • 2022
  • We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

Effect of Manufacturing Parameters on Characteristic of Thin Film Resistor (박막저항기 특성에 미치는 제조 공정 인자의 영향)

  • Park Hyun-Sik;Yu Yun-Seop
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.1 s.34
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    • pp.1-7
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    • 2005
  • The effect of trimming process to adjust accurate resistance of a thin-film resistor was studied with respect to low temperature coefficient of resistance(TCR) and high precision. The characteristics of a thin-film resistor fabricated by sputtering were investigated depending on trimming condition and annealing temperature. Measured results showed that the characteristic of a thin-film resistor was degraded with increased trimming speed. However, an average resistance deviation and a TCR were improved to $0.26\%$ and 52.77[ppm/K], respectively, through annealing treatment. Also, thin-film resistors with 1 k$\Omega$ and 10k$\Omega$ showed better performance compared to a resistor with 100k$\Omega$. The Optimal trimming speed and annealing temperature were 20mm/sec and 539K, respectively, and under this optimal condition, a thin-film resistor with an average resistance deviation of $0.31\%$ and a TCR of below 10[ppm/K] was obtained.

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Study on the Compositions of Photosensitive Resistor Paste Using Epoxy Acrylate Oligomers and Conductive Carbonblack (에폭시 아크릴레이트 올리고머와 전도성 카본블랙을 이용한 감광성 저항 페이스트 조성 연구)

  • Park, Seong-Dae;Kang, Nam-Kee;Lim, Jin-Kyu;Kim, Dong-Kook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.421-421
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    • 2008
  • Generally, the polymer thick-film resistors for embedded organic or hybrid substrate are patterned by screen printing so that the accuracy of resistor pattern is not good and the tolerance of resistance is too high(${\pm}$20~30%). To reform these demerits, a method using Fodel$^{(R)}$ technology, which is the patterning method using a photosensitive resin to be developable by aqueous alkali-solution as a base polymer for thick-film pastes, was recently incorporated for the patterning of thermosetting thick-film resistor paste. Alkali-solution developable photosensitive resin system has a merit that the precise patterns can be obtained by UV exposure and aqueous development, so the essential point is to get the composition similar to PSR(photo solder resist) used for PCB process. In present research, we made the photopatternable resistor pastes using 8 kinds of epoxy acrylates and a conductive carbonblack (CDX-7055 Ultra), evaluated their developing performance, and then measured the resistance after final curing. To become developable by alkali-solution, epoxy acrylate oligomers with carboxyl group were prepared. Test coupons were fabricated by patterning copper foil on FR-4 CCL board, plating Ni/Au on the patterned copper electrode, applying the resistor paste on the board, exposing the applied paste to UV through Cr mask with resistor patterns, developing the exposed paste with aqueous alkali-solution (1wt% $Na_2CO_3$), drying the patterned paste at $80^{\circ}C$ oven, and then curing it at $200^{\circ}C$ during 1 hour. As a result, some test compositions couldn't be developed according to the kind of oligomer and, in the developed compositions, the measured resistance showed different results depending on the paste compositions though they had the same amount of carbonblack.

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The Study on Thermal Stability of NiCr Thin-films Resistor (NiCr 박막 저항계의 열적 안정성에 관한 연구)

  • Kim, I.S.;Jeong, S.J.;Kim, D.H.;Song, J.S.
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.168-170
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    • 2001
  • The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on corning glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then 10 ppm/$^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

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A Study on the Resistor Array Networks for the Optimum Termination of a Modified Large TEM Cell (변형 TEM Cell의 최적 종단 처리를 위한 저항 어레이 망 설계에 관한 연구)

  • 이중근;강문수
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.7 no.2
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    • pp.157-166
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    • 1996
  • This paper presents the optimum termination method of a TEM Cell, which utilizes hybrid distributed termination resistor array networks. Current stream on the septum, and on the terminal end of a TEM Cell is analyzed by numerical analysis. By circuit analysis, the optimum resistor array network is designed based on the result of the analysis, which assures efficient power dissipation, and current stream traveling straight and uniform. Thermovision photos were taken for comparing the conventional termination network on which each resistor is arranged at regular intervals, with the suggested optimum termination network on which each resistor is arranged for current distribution. The comparison of the results of thermovision photos shows a good agreement with those obtained by numerical analysis.

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A study on integrated device TaN/$Al_2O_3$ thin film resistor development (TaN/$Al_2O_3$ 집적화 박막 저항소자 개발에 관한 연구)

  • Kim, I.S.;Cho, Y.R.;Min, B.K.;Song, J.S.
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1476-1478
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    • 2002
  • In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

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Pulse energy high Power test of metal film resistor (메탈 필름 저항의 펄스 대전력 시험)

  • Son, Y.G.;Jang, S.D.;Kwon, S.J.;Oh, J.S.;Cho, M.H.;Lee, K.T.
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2103-2105
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    • 2005
  • Metal film type of resistor have been tested to invest maximum usable power at the pulsed high voltage and pulsed high current. Experiments were carried out using capacitor charging power supply and dump switch. Pulsed amplitude were varied from 1kV to 25kV. The peak current reached was 1kA. Datasheet are given for the limited pulsed power and energy for metal film type of resistor in nanosecond and microsecond time range. The experimental investigation of the threshold loading of the resistor in the high current and voltage pulsed mode has shown that the process of destruction of resistor has specific features for each mode. The mechanisms of failure and destruction of resistors under action of high-voltage and high-current pulses are discussed.

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