• 한국인터넷방송통신학회논문지
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• 제23권3호
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• pp.77-82
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• 2023

본 논문에서는 접지된 2중 유전체층 사이의 저항띠 격자구조에 의한 TM(tranverse magnetic) 전자파 산란문제를 전자파 수치해석방법으로 알려진 FGMM(fourier galerkin moment method)과 PMM(point matching method)을 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였으며, 저항띠의 해석을 위해 저항경계조건을 적용하였다. 전반적으로 저항율이 작으면 저항띠에 유도되는 전류밀도의 크기가 증가하였고, 반사전력도 증가하였다. 또한, 유전체층의 두께와 비유전율의 값이 증가하면 전반적으로 반사전력은 증가하였다. 본 논문의 제안된 구조에 대해 FGMM과 PMM의 수치해석 방법을 적용한 수치결과들은 매우 잘 일치하였다.

• 전기의세계
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• 제23권3호
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• pp.70-76
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• 1974

Computer is used to analyze nonlinear networks. Integrated circuits and new nonlinear elements have generated much interest in nonlinear circuit theory. A key to the understanding and analysis of nonlinear circuits is the study of characteristics for nonlinear elements and nonlinear resistive networks both in theory and in computation. In this apper, an iteration method using cut set analysis for nonlinear dc analysis based on Branin's method is described. Application of this algorithm to solve two nonlinear problems, is presented and a possible method of improving the basic algorithm by means of a sparse matrix technique is described.

• 정보통신설비학회논문지
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• 제8권1호
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• pp.36-39
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• 2009

In this paper, we propose a 4-wire type driving circuit for resistive touch panel which was manufactured at the lab. The circuit is designed by using the touch panel controller ADS7846 and AVR microcontroller board. The test result shows that the designed circuit can give and transmit the position information of touch panel to the computer.

• 대한전자공학회논문지
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• 제4권1호
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• pp.22-26
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• 1967

비선형소자를 사용한 주파수체배기의 효율은 소자의 특성에 따라 변화한다. 비선형 저항소자를 사용하여 이체배된 마이크로파주파수를 얻었고 체배기의 효율은 이론치와 측정치로 비교하였다. 비선형 저항소자를 사용한 주파수체배기의 효율은 주파수에 관계없이 역방향대순방향의 저항비에 비례하여 증가함을 보았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 B
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• pp.1385-1387
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• 2002

In the case of HTS Resistive type Superconducting Fault Current Limiter(SFCL), its possibility has been discussed due to its theory and a simple structure. The Resistive type SFCL can be useful for the protection of the power delivery systems from fault current. Effective simulation scheme that can be applied to the utility network readily and cheaply under various conditions considering the sort of faults, the capacity of systems as well are strongly expected and emphasized among researchers. This paper proposes a simulation skill of resistive type SFCL using PSCAD/EMTDC.

• 한국세라믹학회지
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• 제46권3호
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• pp.336-343
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• 2009

Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• 대한기계학회논문집B
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• 제32권7호
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• pp.542-548
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• 2008

A thermal mass air flow sensor (MAFS), which consists of a micro-heater and thermo-resistive sensors on the silicon-nitride ($Si_3N_4$) thin membrane structure, is micro-fabricated by MEMS processes. Two thermo-resistive temperature sensors are located at $100{\mu}m$ upstream and downstream from the micro-heater respectively. The thermal characteristics are measured to find the best measurement indicator. The micro-heater is operated under constant power condition, and four flow indicators are investigated. The normalized temperature indicator shows good physical meaning and is easy to use in practice. It is found that the configurations and heating power of thermal-resistive elements are the dominant factors to determine the range of the flow measurement in the MAFS with higher sensitivity and accuracy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.132-134
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• 2007

The conventional method used low pass filter for computing resistive leakage current from total leakage current. Therefore, it takes long time for computation. In this paper, a new algorithm is proposed to reduce the computation time. In the theory, the resistive leakage current is computed exactly from the signals during only a half period of power voltage. The suggested method uses integrator and sample-hold circuit and it is confirmed to be able to measure the resistive leakage current from total leakage current by simulation.

• Journal of information and communication convergence engineering
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• 제7권1호
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• pp.66-71
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• 2009

A novel sensing scheme using resistive characteristics of the finger is proposed. ESD problem is more harmful than a capacitive fingerprint sensor in a resistive fingerprint sensor, because the sensor plate is directly connected to the sensing cell. The proposed circuit is more robust than conventional circuit for ESD. The sensor plate and sensing cell are isolated by capacitor. The pixel level simple detection circuit is fully digital operation unlike that of the capacitive sensing cell. The sensor circuit blocks are designed and simulated in a standard CMOS $0.35{\mu}m$ process. The proposed circuit is more stable and effective than a typical circuit.