• Title/Summary/Keyword: resistive

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Solution of TM Scattering Applying FGMM and PMM for Resistive Strip Grating Between a Grounded Double Dielectric Layer (접지된 2중 유전체층 사이의 저항띠 격자에 대해 FGMM과 PMM을 적용한 TM 산란 해)

  • Uei-Joong Yoon
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.3
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    • pp.77-82
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    • 2023
  • In this paper, TM(tranverse magnetic) electromagnetic scattering problems for resitive strip grating between grounded double dielectric layers are analyzed by using the FGMM(fourier galerkin moment method) and PMM(point matching method) known as a numerical method of electromagnetic field. The boundary conditions are applied to obtain the unknown field coefficients, the resistive boundary condition is applied to analysis of resistive strip. Overall, when the unoform resistivity decreased, the magnitude of the current density induced in the resistive strip increased, and the reflected power also increased. Also, as the thickness and relative permittivity of the double dielectric layers increased, the overall reflected power increased. The numerical results obtained by using the numerical methods of FGMM and PMM to the structure proposed in this paper agree very well.

Analysis of Nonlinear Resistive Networks (비선형저항(resistive)회로망의 해석)

  • Kyun Hyon Tchah
    • 전기의세계
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    • v.23 no.3
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    • pp.70-76
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    • 1974
  • Computer is used to analyze nonlinear networks. Integrated circuits and new nonlinear elements have generated much interest in nonlinear circuit theory. A key to the understanding and analysis of nonlinear circuits is the study of characteristics for nonlinear elements and nonlinear resistive networks both in theory and in computation. In this apper, an iteration method using cut set analysis for nonlinear dc analysis based on Branin's method is described. Application of this algorithm to solve two nonlinear problems, is presented and a possible method of improving the basic algorithm by means of a sparse matrix technique is described.

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An Implementation of Driving Circuit for Resistive Touch Panel (저항막식 터치 패널의 구동회로 제작)

  • Han, Hyung-Seok
    • Journal of The Institute of Information and Telecommunication Facilities Engineering
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    • v.8 no.1
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    • pp.36-39
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    • 2009
  • In this paper, we propose a 4-wire type driving circuit for resistive touch panel which was manufactured at the lab. The circuit is designed by using the touch panel controller ADS7846 and AVR microcontroller board. The test result shows that the designed circuit can give and transmit the position information of touch panel to the computer.

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A Study on the Microwave Frequency Multiplier using Nonlinear Elements (비선형소자를 이용한 마이크로파 주파수 체배기)

  • 김봉열;이재덕
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.4 no.1
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    • pp.22-26
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    • 1967
  • The efficiency of frequency multiplier using nonlinear elements varies with the characteristics of the elements and also varies with the order of multiplication. And, if the elements is resistive, the efficiency varies with reverse-to-forward resistance value. Microwave energy which was frequency doubled by a nonlinear resistive element was obtained, and the theoretical efficiency of nonlinear reactive and resistive multiplier were compared with the efficiency taken by experiments. It was found that efficiency of frequency multiplier using the nonlinear resistive elements was increased, without depending on frequency, with the reverse-to-forward resistance value.

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Simulation of HTS Resistive Type Superconducting Fault Current Limiter using PSCAD/EMTDC (PSCAD/EMTDC를 이용한 고온초전도 저항형한류기 시뮬레이션)

  • Lee, Jae-Deuk;Park, Min-Won;Yu, In-Kun
    • Proceedings of the KIEE Conference
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    • 2002.07b
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    • pp.1385-1387
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    • 2002
  • In the case of HTS Resistive type Superconducting Fault Current Limiter(SFCL), its possibility has been discussed due to its theory and a simple structure. The Resistive type SFCL can be useful for the protection of the power delivery systems from fault current. Effective simulation scheme that can be applied to the utility network readily and cheaply under various conditions considering the sort of faults, the capacity of systems as well are strongly expected and emphasized among researchers. This paper proposes a simulation skill of resistive type SFCL using PSCAD/EMTDC.

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Control of Charge Transports in Nonvolatile Resistive Memory Devices through Embedded Nanoscale Layers (나노 적층 구조를 응용한 저항성 기반 비휘발성 메모리 소자 특성 제어)

  • You, Yil-Hwan;Hwang, Jin-Ha
    • Journal of the Korean Ceramic Society
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    • v.46 no.3
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    • pp.336-343
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    • 2009
  • Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems.

Resistive Switching in Vapor Phase Polymerized Poly (3, 4-ethylenedioxythiophene)

  • Kalode, P.Y.;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.384-384
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    • 2012
  • We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

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Micro-Fabrication and Thermal Characteristics of a Thermal Mass Air Flow Sensor for Real-time Applications (고응답 열식 질량공기유량센서의 제작 및 열거동 특성)

  • Park, Byung-Kyu;Lee, Joon-Sik
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.32 no.7
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    • pp.542-548
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    • 2008
  • A thermal mass air flow sensor (MAFS), which consists of a micro-heater and thermo-resistive sensors on the silicon-nitride ($Si_3N_4$) thin membrane structure, is micro-fabricated by MEMS processes. Two thermo-resistive temperature sensors are located at $100{\mu}m$ upstream and downstream from the micro-heater respectively. The thermal characteristics are measured to find the best measurement indicator. The micro-heater is operated under constant power condition, and four flow indicators are investigated. The normalized temperature indicator shows good physical meaning and is easy to use in practice. It is found that the configurations and heating power of thermal-resistive elements are the dominant factors to determine the range of the flow measurement in the MAFS with higher sensitivity and accuracy.

New Algorithm for Measuring Resistive Leakage Current and Development of ELB Controller (새로운 저항성 누전전류 검출회로 및 누전차단제어기 개발)

  • Ham, Seung-Jin;Han, Song-Yop;Koh, Chang-Seop
    • Proceedings of the KIEE Conference
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    • 2007.10c
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    • pp.132-134
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    • 2007
  • The conventional method used low pass filter for computing resistive leakage current from total leakage current. Therefore, it takes long time for computation. In this paper, a new algorithm is proposed to reduce the computation time. In the theory, the resistive leakage current is computed exactly from the signals during only a half period of power voltage. The suggested method uses integrator and sample-hold circuit and it is confirmed to be able to measure the resistive leakage current from total leakage current by simulation.

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A Robust Resistive Fingerprint Sensor

  • Jung, Seung-Min
    • Journal of information and communication convergence engineering
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    • v.7 no.1
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    • pp.66-71
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    • 2009
  • A novel sensing scheme using resistive characteristics of the finger is proposed. ESD problem is more harmful than a capacitive fingerprint sensor in a resistive fingerprint sensor, because the sensor plate is directly connected to the sensing cell. The proposed circuit is more robust than conventional circuit for ESD. The sensor plate and sensing cell are isolated by capacitor. The pixel level simple detection circuit is fully digital operation unlike that of the capacitive sensing cell. The sensor circuit blocks are designed and simulated in a standard CMOS $0.35{\mu}m$ process. The proposed circuit is more stable and effective than a typical circuit.