• 한국항행학회논문지
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• 제15권3호
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• pp.349-354
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• 2011

본 논문에서는 스트립 폭과 격자주기, 유전체 층의 비유전율과 두께, 그리고 transverse electric (TE) 평면파의 입사각에 따른 접지된 유전체 평면위의 스트립 양끝에서 0 저항율을 갖는 저항띠 격자구조에 의한 H-분극산란 문제를 Fourier-Galerkin Moment Method (FGMM)를 이용하여 해석하였다. 저항띠의 변하는 저항율은 저항띠의 양끝에서 0으로 변하는 경우를 취급하였고, 이때 저항띠 위에서 유도되는 전류밀도는 직교다항식의 일종인 2종 Chebyshev 다항식의 급수로 전개하였다. 반사전력의 급변점들은 공진효과에 기인한 것으로 과거에 wood's anomallies라고 불리워지며, 반사전력에 대한 수치결과들은 기존 논문의 균일 저항율의 수치 결과들과 비교하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.243.1-243.1
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• 2011

We demonstrate a facile and robust layer-by-layer (LbL) assembly method for the fabrication of nonvolatile resistive switching memory (NRSM) devices based on superparamagnetic nanocomposite multilayers, which allows the highly enhanced magnetic and resistive switching memory properties as well as the dense and homogeneous adsorption of nanoparticles, via nucleophilic substitution reaction (NSR) in nonpolar solvent. Superparamagnetic iron oxide nanoparticles (MP) of about size 12 nm (or 7 nm) synthesized with oleic acid (OA) in nonpolar solvent could be converted into 2-bromo-2-methylpropionic acid (BMPA)-stabilized iron oxide nanoparticles (BMPA-MP) by stabilizer exchange without change of solvent polarity. In addition, bromo groups of BMPA-MP could be connected with highly branched amine groups of poly (amidoamine) dendrimer (PAMA) in ethanol by NSR of between bromo and amine groups. Based on these results, nanocomposite multilayers using LbL assembly could be fabricated in nonpolar solvent by NSR of between BMPA-MP and PAMA without any additional phase transfer of MP for conventional LbL assembly. These resulting superparamagnetic multilayers displayed highly improved magnetic and resistive switching memory properties in comparison with those of multilayers based on water-dispersible MP. Furthermore, NRSM devices, which were fabricated by LbL assembly method under atmospheric conditions, exhibited the outstanding performances such as long-term stability, fast switching speed and high ON/OFF ratio comparable to that of conventional inorganic NRSM devices produced by vacuum deposition.

• 한국전자파학회논문지
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• 제19권2호
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• pp.231-236
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• 2008

저항성 V 다이폴을 수치적으로 해석하기 위하여 모멘트 방법(method of moments)에 기반을 둔 수치 해석 모델을 개발하였다. 수치 해석 모델의 성능을 입증하기 위하여 실험 모델을 만든 후 안테나에서 급전선으로 돌아오는 반사 계수를 측정하였다. 측정된 데이터와 수치 해석 모델에서 계산된 데이터는 매우 잘 일치하였고, 이로써 수치 해석 모델의 정확성을 입증하였다. 수치 해석 모델을 이용하여 안테나의 효율과 저항에서 소모되는 전력을 분석하였다. 분석 결과는 안테나가 부하 저항 때문에 낮은 복사 효율을 가진다는 것을 보였다. 또한, 안테나의 급전점과 가까운 곳에 위치한 저항이 급전점에서 먼 곳에 위치한 저항보다 많은 전력을 소모한다는 것을 보였다. 이 결과들은 저항성 V 다이폴이 받아들일 수 있는 최대 전력을 계산하거나 특정 응용을 위한 저항의 전력 등급을 결정하는데, 그리고 안테나의 작동 거리를 예상하는데 사용될 수 있을 것으로 보인다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1704-1708
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• 2008

Many studies have emphasized the importance of resistive exercise to maintain a healthy human body, particular in prevention of weakening of physical strength. Recently, some studies advocated that an application of vibration as a supplementary means in a regular training was effective in encouraging physical strength. Aim of the current study was, therefore, to identify if an application of vibration in a resistive exercise was effective in encouraging physical strength as that in a regular training. A 3-dimensional virtual lower extremity model for a healthy male and virtual leg-press model were generated and synchronized. Dynamic leg-press exercises on a slide machine with/without extra load and on a footboard with vibration as well as on a slide machine with extra load were analyzed. The results of the current indicated that the application of the vibration on the dynamic leg-press exercise might be not greatly effective in encouraging physical strength, compared with the dynamic leg press exercise with extra load. It was, however, thought that the application of the vibration might be helpful to elderly individuals because the reduced maximum muscle strength appeared by the effect of the vibration may avoid a muscular spasm, which can be driven from a high muscle strength sometimes produced during the leg-press exercise with extra load.

• 한국항행학회논문지
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• 제15권4호
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• pp.543-548
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• 2011

본 논문에서는 스트립 폭과 격자주기, 유전체 층의 비유전율과 두께, 그리고 TE(transverse electric) 평면파의 입사각에 따른 접지된 유전체 평면위의 변하는 저항율을 갖는 저항띠 격자구조에 의한 H-분극 전자파 산란문제를 FGMM(Fourier-Galerkin Moment Method)를 이용하여 해석하였다. 저항띠의 변하는 저항율은 한쪽 모서리에서는 유한하고 다른쪽 모서리에서 0 저항율을 가지며, 이때 저항띠 위에서 유도되는 표면 전류밀도는 직교다항식의 일종인 차수가 ${\alpha}=1$, ${\beta}=0$인 Jacobi 다항식의 급수로 전개하였다. 정규화된 반사전력의 수치결과는 기존의 수치결과와 매우 일치하였다.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• Progress in Superconductivity
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• 제7권2호
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• pp.114-119
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• 2006

High critical current density, high n value, multiple faults endurances, and fast recovery characteristics of YBCO thin films are very attractive characteristics for developing resistive type superconducting fault current limiters. But due to the limited current and voltage ratings of one YBCO module, it is needed to construct series and parallel module connections for high capacity electric networks. Especially for distribution network, more than 30 units should be connected in series to meet voltage level. So in order to construct distribution-level superconducting fault current limiter, simultaneous quench in one YBCO thin films should be realized, and furthermore, quench should be occurred in all fault current limiting units equally to avoid local heating and failures. In this paper, we proposed optimum design of YBCO thin films for fault current limiting module and technical method using shunt resistor to achieve simultaneous quench between multi current limiting units. From the analytical and the experimental results, optimal current path and thickness of shunt material was determined for YBCO thin films and shunt resistor between modules was developed. Finally, 14 kV one phase resistive fault current limiter using multi YBCO thin films was constructed and it was possible to get satisfactory test results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.286-287
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• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• 한국전자통신학회논문지
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• 제11권6호
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• pp.605-610
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• 2016

누전차단기는 전기재해로 인한 사고를 미연에 방지하기 위해 사용되는 유일한 방법이다. 그러나 기존의 누전차단기는 15mA~30mA의 차단범위에서 합성 누설전류를 검출하여 동작하기 때문에 저항성 누설전류에 의해 발생하는 화재 및 인체감전으로 인한 인명 및 재산피해를 미연에 방지하는데 한계가 있다. 또한 용량성 누설전류에 의한 오동작으로 인한 생산성 감소 및 신뢰성 등의 문제를 가지고 있다. 본 연구에서는 기존 누전차단기의 문제를 해결하기 위해 위상차를 측정을 통하여 유효성분(저항성) 누설전류를 감지할 수 있는 알고리즘을 개발하였고, 감지된 누설전류를 기술표준규격에서 규정하는 0.03초 이내에 차단을 할 수 있도록 16 bit 신호처리 프로세서인 MSP430 프로세서를 사용하여 유효성분 누설전류 감지 알고리즘을 구현하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.