• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.66-66
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• 2006

Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.86-90
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• 2006

Nanoimprint lithography (NIL) is a novel method to fabricate nanometer scale patterns. It is a simple process with low cost, high throughput and high resolution. NIL process creates patterns by the mechanical deformation of imprint resist and physical contact process. This physical contact process causes the stiction between the resist and the stamp. Stiction becomes a key issue especially in the stamps including narrow pattern size and wide area during NIL process development. The antistiction layer coating using fluorocarbon is very effective to prevent this problem and ensure successful NIL. In this paper, the concept of antistiction coating is explained and different preparation methods for nanoimprinting are briefly discussed.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.55-60
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• 2020

The hard mask photo-resist strip inspection system for the semiconductor wafer manufacturing process inspects the position of the circuit pattern formed on the wafer by measuring the distance from the edge of the wafer to the strip processing area. After that, it is an inspection system that enables you to check the process status in real time. Process defects can be significantly reduced by applying a tester that has not been applied to the existing wafer strip process, edge etching process, and wafer ashing process. In addition, it is a technology for localizing semiconductor process inspection equipment that can analyze the outer diameter of the wafer and the state of pattern formation, which can secure process stability and improve wafer edge yield.

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.622-627
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• 2009

Using an alkali-solution developable photosensitive resin and a carbon black as a conductive filler, photo-patternable pastes for polymer thick film resistor were fabricated and evaluated. A photo solder resist (PSR), which is usually used as protecting layer of printed circuit board (PCB), was used as a photosensitive resin so that ultraviolet exposure and alkali-aqueous solution development of paste were possible. After fabricating the photosensitive polymer resistor paste, the electrical properties of thick film resistors were measured using PCB test boards. Sheet resistance was decreased with increasing amount of carbon black, but the developability was limited in excess loading of carbon black. The sheet resistance was also reduced by re-curing and the change rate was smaller in higher carbon black loading. Moreover, finely patterned meander-type thick film resistors were fabricated using photo-process and large resistance up to several tens of sheet resistance could be obtained in small area by this technique.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.948-951
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• 2005

New technology that reduces photolithography process steps from 4 to 3 in fabrication of TFT LCD is introduced. The core technology for 3mask-TFTs is the lift-off process [1], by which the PAS and PXL layer are formed simultaneously. To evaluate the stability of this lift-off process, outgases from photo resist on a substrate during ITO deposition and the quality of ITO film were analyzed and the conventional photo resist stripper machine which operates lift-off process was examined to see its ability to reduce particle problems of the machine. Through the development of total process and design for TFTs using this 3mask technology, panels in TN and IPS modes which exhibit same performances of a display using a conventional process were achieved. In addition, this process was already verified in the mass production line and now some products are being produced by the 3mask technology.

• Journal of the Korean Society of Costume
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• v.56 no.3 s.102
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• pp.42-56
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• 2006

The purpose of this study is to review the literatures and the wall paintings of the ancient tombs of Koguryo in an effort to try to understand the characteristics of the culture of dyeing in Koguryo. The research findings follow: 1. The colors that were in vogue in Koguryo are five cardinal colors (red, blue, white, black, and yellow) and compound colors, like purple and green. Those colors were used in some or all parts of the clothing and even on some parts of the body. 2. Some clothing of Koguryo as shown in the wall paintings were made with a single and solid color by dip dyeing method. But the majority of the clothing had a variety of patterns. Among the patterns, the geometrical dot pattern took the majority. 3. The dyeing techniques used in Koguryo were printing, yarn dyeing, embroidery, wax resist dyeing, drawing and painting. The development of yarn dyeing method, weaving with silk-threads dyed in various colors, enabled to produce Geum fabrics, which were used for the upper classes' clothing. 4. The esthetic features represented in the colors of Koguryo include the beauty of contrast coloring, preference for red, preference for geometrical patterns, and the harmony of yin and yang.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.65-65
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• 2010

Extreme ultraviolet lithography (EUVL) is expected to be applied for making patterns below 32 nm in device industry. An ultrathin EUV photoresist (PR) of a few nm in thickness is required to reduce minimum feature size further. Here, we show that pentacene molecular layers can be employed as a new EUV resist for the first time. Dots and lines in nm scale are successfully realized using the new molecular resist. We clearly provide the mechanism for forming the nanopatterns with scanning photoemission microscope (SPEM), EUV interference lithography (EUV-IL), atomic force microscope (AFM), photoemission spectroscopy (PES), etc. The molecular PR has several advantages over traditional polymer EUV PRs; for example, high thermal/chemical stability, negligible outgassing, ability to control the height and width on the nanometer scale, leaving fewer residuals, no need for a chemical development process and thus reduction of chemical waste to make the nanopatterns. Besides, it could be applied to any substrate to which pentacene bonds chemically, such as $SiO_2$, SiN, and SiON, which is of importance in the device industry.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.286-289
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• 2007

We have developed an automated circuit defect inspection and repair method that can be used to improve the yield ratio of TFT-LCD. The method focuses on correcting resist patterns after the development process to ensure shape regularity. We built a prototype system and confirmed that the method is valid.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1649-1652
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (${\alpha}$- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique ${\alpha}$-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution ${\alpha}$-Si TFT-LCD panel realization.

• Journal of Information Display
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• v.7 no.3
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• pp.1-4
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.