• 방사성폐기물학회지
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• 제5권1호
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• pp.39-52
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• 2007

사용후핵연료의 건식 재가공을 위한 핵연료 원격 제조공정중 분말제조를 위한 산화 및 OREOX(산화 환원공정)열처리 공정으로부터 $^{85}Kr$ 및 $^{14}C$ 핵분열기체의 방출거동을 정량적으로 평가하였다. 특히 사용후핵연료의 평균 연소도가 $27,000{\sim}65,000\;MWd/tU$ 범위내에서 연소도 변화에 따른 핵분열기체의 방출 분율은 측정한 실험결과와 ORIGEN 코드로부터 계산된 초기 inventory를 상호 비교하여 구하였다. $500^{\circ}C$ 1차 산화공정(voloxidation)에서 $^{85}Kr$ 및 $^{14}C(^{14}CO_2)$의 시간에 따른 방출거동은 $UO_2$ 핵연료의 $U_3O_8$으로의 분말화 정도와 밀접한 관련이 있는 것으로 보이며, 입계(grain-boundary)에 분포된 핵분열기체가 대부분 방출되는 것으로 여겨진다. 산화분말을 이용한 OREOX 공정으로부터 핵분열기체의 높은 방출율은 $700^{\circ}C$의 환원공정에서 온도 증가에 의한 기체 확산 및 $UO_2$으로의 환원에 의한 U 원자 이동성 증가에 의존하며 주로 inter-grain 및 intra-grain에 분포된 핵분열기체가 방출된 것으로 판단된다. 일차 산화공정시 $^{85}Kr$ 및 $^{14}C$ 핵분열기체의 방출 분율은 핵 연료 연소도가 증가함에 따라 높게 나타났고 방출 분율 범위는 총 inventory의 $6{\sim}12%$정도며, 산화분말의 OREOX 공정처리시 잔류 핵분열기체 대부분이 방출되는 것으로 보인다. 아울러 사용후핵 연료로부터 핵분열기체의 제거를 위해서는 고온 환원분위기보다는 산화에 의한 분말화가 더 효과적인 것으로 여겨진다.

• Korean Chemical Engineering Research
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• 제53권1호
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• pp.46-52
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• 2015

A leaching kinetics was conducted for the purpose of recovery of praseodymium in sulfuric acid ($H_2SO_4$) from REE slag concentrated by the smelting reduction process in an arc furnace as a reactant. The concentration of $H_2SO_4$ was fixed at an excess ratio under the condition of slurry density of 1.500 g slag/L, 0.3 mol $H_2SO_4$, and the effect of temperatures was investigated under the condition of 30 to $80^{\circ}C$. As a result, praseodymium oxide ($Pr_6O_{11}$) existing in the slag was completely converted into praseodymium sulfate ($Pr_2(SO_4)_3{\cdot}8H_2O$) after the leaching of 5 h. On the basis of the shrinking core model with a shape of sphere, the first leaching reaction was determined by chemical reaction mechanism. Generally, the solubility of pure REEs decreases with the increase of leaching temperatures in sulfuric acid, but REE slag was oppositely increased with increasing temperatures. It occurs because the ash layer included in the slag is affected as a resistance against the leaching. By using the Arrhenius expression, the apparent activation energy of the first chemical reaction was determined to be $9.195kJmol^{-1}$. In the second stage, the leaching rate is determined by the ash layer diffusion mechanism. The apparent activation energy of the second ash layer diffusion was determined to be $19.106kJmol^{-1}$. These relative low activation energy values were obtained by the existence of unreacted ash layer in the REE slag.

• 한국콘텐츠학회논문지
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• 제7권2호
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• pp.92-99
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• 2007

본 논문은 기존의 블록 암호 프로세서를 128-bit 구조에서 32-bit구조로 소형화시킨 저 전력 구조를 제안하였다. 본 논문의 목적은 암호 이론 연구가 아닌 실용화 연구로서 실용화 결과를 보이는 것이다. 제안된 구조는 하드웨어 크기를 줄이기 위해 데이터 패스와 확산 함수가 수정되었다. 저전력 암호회로의 예로서 ARIA 알고리즘을 고쳐서 4개의 S-box가 사용되었다. 제안된 32-bit ARIA는 13,893 게이트로 구성되어있으며 기존 128-bit 구조보다 68.25% 더 작다. 설계된 회로는 매그너칩스의 0.35um CMOS 공정을 기반으로 표준 셀 라이브러리를 이용하여 합성되었다. 트랜지스터 레벨에서 전력 시뮬레이션 결과 이 회로의 전력 소모는71MHz에서 기존의 128-bit ARIA구조의 9.7%인 61.46mW으로 나타났다. 이 저전력 블록 암호 회로는 전원이 없는 무선 센서 네트워크 또는 RFID 정보보호에 핵심요소가 될 것이다.

• 전자공학회논문지A
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• 제31A권12호
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• 한국재료학회지
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• 제13권6호
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• pp.389-393
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• 2003

The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

• Macromolecular Research
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• 제15권7호
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• pp.676-681
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• 2007

A process designed to synthesize rigid polyurethane foam (PUF) with insulative properties via the modulation of PUF cell size via the addition of clay and the application of ultrasound was assessed. The blowing agents utilized in this study include water, cyclopentane, and HFC-365mfc, all of which are known to be environmentally-friendly blowing agents. The rigid PUFs were prepared from polymeric 4,4'-diphenylmethane diisocyanate (PMDI) and polyether polyol with a density of $50kg/m^3$. In addition, rigid PUFs/clay nanocomposites were synthesized with clay modified by PMDI with and without the application of ultrasound. The PUF generated using water as a blowing agent evidenced the highest tensile strength. The tensile strength of the PUF/nanocomposites was higher than that of the neat PUF and the strength was even higher with the application of ultrasound. The cell size of the PUF/clay nanocomposites was less than that of the neat PUF, regardless of the type of blowing agent utilized. It appears that the higher tensile strength and lower cell size of the PUF/clay nanocomposites may be attributable to the uniform dispersion of the clay via ultrasonic agitation. The thermal conductivity of the PUF/clay nanocomposites generated with HCFC-141b evidenced the lowest value when PUF/clay nanocomposites were compared with other blowing agents, including HFC-365mfc, cyclopentane, and water. Ultrasound has also proven effective with regard to the reduction of the thermal conductivity of the PUF/clay nanocomposites with any of the blowing agents employed in this study. It has also been suggested that the uniformly dispersed clay particles in the PUF matrix function as diffusion barriers, which prevent the amelioration of the thermal insulation property.

• Corrosion Science and Technology
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• 제11권6호
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• pp.275-279
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• 2012

Ni-W alloy deposits have lately attracted the interest as an alternative surface treatment method for hard chromium electrodeposits because of higher wear resistance, hardness at high temperature, and corrosion resistance. This study deals with influences of process variables, such as electodeposition current density, plating temperature and pH, on the internal stress of Ni-W nanocrystalline deposits. The internal stress was increased with increasing the applied current density. With increasing applied current density, the grain size of the deposit decreases and concentration of hydrogen in the deposit increases. The subsequent release of the hydrogen results in shrinkage of the deposit and the introduction of tensile stress in the deposit. Consequently, for layers deposited at high current density, cracking occurs readily owing to high tensile stress value. By increasing the temperature of the electrodeposition from $60^{\circ}C$ to $80^{\circ}C$, the internal stress was decreased. It seems that an increase in the number of active ions overcoming the activation energy at elevated temperature caused a decline in the concentration polarization and surface diffusion. It decreased the level of hydrogen absorption due to the lessened hydrogen evolution reaction. Therefore, the lower level of hydrogen absorption degenerated the hydride on the surface of the electrode, resulting in the reduction of the internal stress of the deposits. By increasing the pH of the electrodeposition from 5.6 to 6.8, the internal stress in the deposits were slightly decreased. It is considered that the decrease in internal stess of deposits was due to supply of W complex compound in cathode surface, and hydrogen ion resulted from decrease of activity.

• 전기화학회지
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• 제9권2호
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• pp.95-99
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• 2006

마이크로전극을 사용하여 니켈-수소 전지의 전극 활물질인 수소저장합금$(MmNi_{3.55}Co_{0.75}Mn_{0.4}Al_{0.3})$과 수산화니켈의 단일입자에 대하여 전기화학적 특성을 평가하였다. 즉 마이크로 전극을 활물질 입자 한 개 위에 전기적인 접촉을 이루도록 조정하고 전위 주사(Cyclic Voltammograms) 및 포텐셜 스텝(Potential Step)으로 실험을 실시하였다. 그 결과 수소저장 합금 입자의 경우 -0.9, -0.75, -0.65V 부근에서 3개의 산화 피크 및 -0.98V에서 수소발생 전위, 그리고 수산화니켈 입자의 경우 프로톤 산화 환원 반응(0.45V, 0.32V)과 산소 발생 반응 전위를 보다 명확하게 확인 할 수 있었다. 그리고 수소흡장합금 입자 내에서의 수소 흡장 및 방출 전 과정에 대해 수소 확산계수 $(D_{app})\;(10^{-9}\sim10^{-10}cm^2/s)$가 얻어졌다.

• 토지주택연구
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• 제2권4호
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• pp.491-501
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• 2011

This study estimated economic value and benefits of Yongsan National Park, which will be constructed by financial investment of the government and objectively estimated the real value of it by understanding the value of the park from a user's view of the park. For this, the value of Yongsan National Park is divided into using value such as carbon reduction and the function of relieving urban heat island as an environmental material and non-using value based on willingness to pay of the public according to the construction of the park. As a result of the analysis, it was found out that the using value of Yongsan National Park would reach 130 million won up to maximum level of 450 million won per year, and the non-using value was analyzed to be worthy of 2,344 won per capita every month. Besides, economic ripple effect that can be expected in the process of the park construction project was analyzed to be a national policy that creates effect on production inducement of 2.6 trillion won and value added of 809.6 billion won and new jobs for 25,620 persons. Considering the value of Yongsan National Park and the effect of the project based on the result of this study, it was found that it could sufficiently secure the validity of implementing the project compared to the financial investment by the government. Therefore, it must be emphasized that diffusion strategy is necessary for national understanding and for a nation to make it understood its appropriateness widely in respect to the construction of Yongsan National Park for the successful construction of Yongsan National Park and to raise its using value in the future.