• 한국균학회소식:학술대회논문집
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• 2018.05a
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• pp.51-51
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• 2018

The application of recombinant DNA technology has been remarkable and nearly replaced commonly used traditional methods. Traditional industrial microbiology long depended on the discovery of valuable strains and mutagenesis of such strains to improve its secretion capacity of enzymes and secondary metabolites on the industrial scale. Commodities included industrial enzymes and biopharmaceuticals. The purpose of genome manipulation by the crossing of different strains or genetic recombination of naked DNA to the genome is of increased production of valuable metabolites. We optimized a transformation method to either for removal of innate genes, introduction of heterologous genes, or combination of both. We have been used selected whole or partial genes to manipulate target fungi toward the development of strains overproducing invaluable proteins. We have also used the whole genome sequence information of fungal genomes in public databases and functional genomics approach to select genes to manipulate and eventually contributing greatly to the development of overproducing industrial strains overproducing proteins or secondary metabolites. I will briefly review 1) filamentous fungi as a host for production of recombinant proteins and secondary metabolites, 2) markets of industrial metabolites, 3) a new approach to manipulate up to five genes at the same time in the system that ProxEnrem uses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.221-222
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• 2008

In Crystalline Si solar cells, Anti-Reflection Coating is contribute to improvement in energy conversion efficiency due to decrease of optical loss and recombination owing to surface passivation. Porous Si is formed electrochemical etching that uses chemical solution and anodization etching. So It gives that advantage in rapid process time and without high cost equipment. In this paper, We compare Porous Si with $SiO_2$/SiNx ARC and analyze that by anti-reflection coating.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.254-260
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• 2014

Organic solar cells have attracted extensive attention as a promising approach for cost-effective photovoltaic devices. However, organic solar cell has disadvantage of low power conversion efficiency in comparison with other type of solar cell, due to the recombination ratio of hole and electron is too large in the active layer. Thus we have change the surface structure of PEDOT:PSS layers to improve the current density by colloidal lithography method using various-size of polystyrene sphere. The two types of coating method were applied to fabricate the different pattern shape and height, such as spin coating and drop casting. Using the organic solvent, we easily eliminate the PS sphere and could make the varied pattern shapes by controlling the wet etching time. Also we have measured the electrical properties of patterned PEDOT:PSS film to check whether it is suitable for organic photovoltaics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.589-594
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• 2016

P3HT:PCBM bulk heterojunction solar cells added with ferroelectric polymer were fabricated and characterized. By incorporating P3HT:PCBM solar cell with P(VDF-TrFE) ferroelectric additive, the power conversion efficiency was increased up to nearly 50%. Photoacoustic analysis on this phenomena was carried out for the first time. Through this study, we find that the ferroelectricity of the polymer additive plays the key role in the enhancement of the power conversion efficiency of the organic solar cell by suppressing the non-radiative recombination of charge transfer exciton more effectively.

• Journal of Mechanical Science and Technology
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• v.19 no.6
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• pp.1378-1389
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• 2005

This work provides the fundamental knowledge of energy transport characteristics during very short-pulse laser heating of semiconductors from a microscopic viewpoint. Based on the self-consistent hydrodynamic equations, in-situ interactions between carriers, optical phonons, and acoustic phonons are simulated to figure out energy transport mechanism during ultrafast pulse laser heating of a silicon substrate through the detailed information on the time and spatial evolutions of each temperature for carriers, longitudinal optical (LO) phonons, acoustic phonons. It is found that nonequilibrium between LO phonons and acoustic phonons should be considered for ultrafast pulse laser heating problem, two-peak structures become apparently present for the subpicosecond pulses because of the Auger heating. A substantial increase in carrier temperature is observed for lasers with a few picosecond pulse duration, whereas the temperature rise of acoustic and phonon temperatures is relatively small with decreasing laser pulse widths. A slight lagging behavior is observed due to the differences in relaxation times and heat capacities between two different phonons. Moreover, the laser fluence has a significant effect on the decaying rate of the Auger recombination.

• Bulletin of the Korean Chemical Society
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• v.19 no.6
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• pp.676-680
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• 1998

The relaxation process of photogenerated carriers was investigated using conductivity measurement on ZnO under He, $H_2,\; CO_2\; and\; O_2$. The process was well explained with the rate constant of reaction or recombination of hole and electron, $k_h \;and\; k_e ( k_h > k_e)$, respectively. Generally, $k_h$ increased with the pressure of the gases. The slope of $k_h$ with respect to the pressure increased in the order of $H_2{\le}He, while $k_h$ of $O_2$ was sensitive to the history of the sample. The relaxation process on ZnO which was exposed to oxygen at 298 K and 573 K was observed during the illumination at 298 K and it was found that the rate constant of hole decreased with illumination time. From the result, it was suggested that the rate constant of photogenerated excess carriers was affected by the surface barrier of the semiconductor.

• Solar Energy
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• v.7 no.1
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• pp.35-41
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• 1987

This paper presents a comprehensive computer simulation of hydrogenated amorphous p-i-n silicon solar cells. The physical mechanism governing solar cell operation has been modeled and solved numerically by Runge-Kutta-Gill method. Effects of gap state density, dopant impurity, diffusion length and interface recombination velocity on solar cell performance are investigated. Numerical results show that the electric field in i-region is not uniform but depends strongly on voltage and position. A rather poor fill factor may be due to the electric field variation and short diffusion length. It is found out that the life time should be improved in order to increase a fill factor and a conversion efficiency.

• Journal of Astronomy and Space Sciences
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• v.37 no.1
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• pp.29-34
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• 2020

On 21 August 2017, during 16:49 UT and 20:02 UT period, a total solar eclipse started. The totality shadow occurred over the United States in time between ~17:15 UT and ~18:47 UT. When the solar radiation is blocked by the moon, observations of the ionospheric parameters will be important in the space weather community. Fortunately, during this eclipse, two Swarm satellites (A and C) flied at about 445 km through lunar penumbra at local noon of United States in the upper ionosphere. In this work, we investigate the effect of the solar eclipse on electron density, slant total electron content (STEC) and electron temperature using data from Swarm mission over United States. We use calibrated measurements of plasma density and electron temperature. Our results indicate that: (1) the electron density and STEC have a significant depletion associated with the eclipse; which could be due to dominance of dissociative recombination over photoionization caused by the reduction of ionizing extreme ultraviolet (EUV) radiation during the eclipse time (2) the electron temperature decreases, compared with a reference day, by up to ~150 K; which could be due to the decrease in photoelectron heating from reduced photoionization.

• Nuclear Engineering and Technology
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• v.52 no.7
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• pp.1537-1544
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• 2020

Molecular dynamics (MD) simulations were conducted to investigate the temperature effects on the primary damage in gallium nitride (GaN) material. Five temperatures ranging from 300 K to 900 K were studied for 10 keV Ga primary knock-on atom (PKA) with inject direction of [0001]. The results of MD simulations showed that threshold displacement energy (E_d) was affected by temperatures and at higher temperature, it was larger. The evolutions of defects under various temperatures were similar. However, the higher temperature was found to increase the peak number, peak time, final time and recombination efficiency while decreasing the final number. With regard to clusters, isolated point defects and little clusters were common clusters and the fraction of point defects increased with temperature for vacancy clusters, whereas it did not appear in the interstitial clusters. Finally, at each temperature, the number of Ga interstitial atoms was larger than that of N and besides that, there were other different results of specific types of split interstitial atoms.

• Macromolecular Research
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• v.14 no.5
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• pp.491-498
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• 2006

The thermal degradation of poly(hexamethylene guanidine) phosphate (PHMG) was studied by dynamic thermogravimetric analysis (TGA) and pyrolysis-GC/MS (p-GC). Thermal degradation of PHMG occurs in three different processes, such as dephosphorylation, sublimation/vaporization of amine compounds and decomposition/ recombination of hydrocarbon residues. The kinetic parameters of each stage were calculated from the Kissinger, Friedman and Flynn-Wall-Ozawa methods. The Chang method was also used for comparison study. To investigate the degradation mechanisms of the three different stages, the Coats-Redfern and the Phadnis-Deshpande methods were employed. The probable degradation mechanism for the first stage was a nucleation and growth mechanism, $A_n$ type. However, a power law and a diffusion mechanism, $D_n$ type, were operated for the second degradation stage, whereas a nucleation and growth mechanism, $A_n$ type, were operated again for the third degradation stage of PHMG. The theoretical weight loss against temperature curves, calculated by the estimated kinetic parameters, well fit the experimental data, thereby confirming the validity of the analysis method used in this work. The life-time predicted from the kinetic equation is a valuable guide for the thermal processing of PHMG.