• 제목/요약/키워드: reactive sputtering

검색결과 607건 처리시간 0.026초

유도결합 플라즈마 마그네트론 스퍼터링에 의한 MgO 박막의 특성 연구 (A Study of MgO Thin Film′s Properties Fabricated by ICP Magnetron Sputtering Method)

  • 김선호;주정훈
    • 한국표면공학회지
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    • 제37권3호
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    • pp.169-174
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    • 2004
  • MgO thin films were reactively deposited using an internal inductively coupled plasma assisted sputtering method varying reactive gas ratio to get stoichiometric film composition, and bipolar dc substrate bias to suppress micro arcs. The minimum frequency required for arc suppression was about 10KHz depending on ICP power. Their crystallinity was analyzed using X-ray diffraction and surface morphology using AFM. The surface was very smooth with rms roughness less than 0.42nm. The preferred orientation of the films were changing from (200) to bulk-like characteristics as Ar: $O_2$ratio was controlled to 10 : 2. Optical emission spectroscopy revealed that there were two distinct discharge modes: a blue one and a green one, where enhanced emission from Ar and Mg were observed. This cannot simply be understood by metallic or oxide mode of reactive sputtering due to ICP coupled to magnetron discharge.

D.C Magnetron Reactive Sputtering 법으로 증착한 $PbTiO_3$ 박막의 열처리에 따른 c-축 배향성의 변화 (Effect of Annealing on c-axis Orientation of $PbTiO_3$ Thin Films by D.C magnetron Reactive Sputtering)

  • 이승현;권순용;최한메;최시경
    • 한국세라믹학회지
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    • 제33권7호
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    • pp.802-808
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    • 1996
  • PbTiO3 thin films were fabricated onto MgO(100) single crystal substrate by reactive D. C magnetron sput-tering of Pb and Ti metal in an oxygen and argon gas mixture. The annealing of the thin films resulted in the decrease of both the c-axis orientation ratio and the lattice parameter. It is well known that the c-axis lattice parameter of thin film is dependent on the Pb/(Pb+Ti)ratio and the residual stress in the film The PbTiO3 thin films with a Pb/(Pb+T) ratio ranging from 0.45 to 0.57 were fabricated and annealed. The structure of the film the c-axis orientation ratio and the lattice parameter were not dependent on the Pb/(Pb+Ti) ratio before and after annealing. These experimental results proved that the decrease of the c-axis lattice parameter under the annealing conditions was due to the relaxation of the intrinsic stress in the film. This relaxation of the intrinsic stress caused the decrease of the c-axis orientation ratio and this phenomenon can be explained by c-axis growth lattice model.

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N2O 반응 가스를 주입한 RF Reactive Magnetron Sputtering에 의한 ZrO2 박막의 구조 및 부식특성 연구 (Structural and Corrosive Properties of ZrO2 Thin Films using N2O as a Reactive Gas by RF Reactive Magnetron Sputtering)

  • 지승현;이석희;백종혁;김준환;윤영수
    • 한국세라믹학회지
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    • 제48권1호
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    • pp.69-73
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    • 2011
  • A $ZrO_2$ thin film as a corrosion protective layer was deposited on Zircaloy-4 (Z-4) clad material using $N_2O$ as a reactive gas by RF reactive magnetron sputtering at room temperature. The Z-4 substrate was located in plasma or out of plasma during the $ZrO_2$ deposition process to investigate mechanical and corrosive properties for the plasma immersion. Tetragonal and monoclinic phases were existed in $ZrO_2$ thin film immersed in plasma. We observed that a grain size of the $ZrO_2$ thin film immersed in plasma state is larger than that of the $ZrO_2$ thin film out of plasma state. In addition, the corrosive property of the $ZrO_2$ thin films in the plasma was characterized using the weight gains of Z-4 after the corrosion test. Compared with the $ZrO_2$ thin film immersed out of plasma, the weight gains of $ZrO_2$ thin film immersed in plasma were larger. These results indicate that the $ZrO_2$ film with the tetragonal phase in the $ZrO_2$ can protect the Z-4 from corrosive phenomena.

Rear Surface Passivation of Silicon Solar Cell with AlON Layer by Reactive Magnetron Sputtering

  • Moon, Sun-Woo;Kim, Eun-Kyeom;Park, Won-Woong;Kim, Kyung-Hoon;Kim, Sung-Min;Kim, Dong-Hwan;Han, Seung-Hee
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.430-430
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    • 2012
  • The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

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Reactive sputtering 방법으로 증착된 W nitride 박막의 특성 (Characteristics of tungsten nitride films deposited by reactive sputtering method)

  • 이연승;이원준;나사균;이윤직;임관용;황정남
    • 한국진공학회지
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    • 제11권1호
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    • pp.22-27
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    • 2002
  • Reactive sputtering 방법으로 증착된 tungsten nitride ($(WN_x)$) 박막에 대해 $N_2$ 유량비 변화에 따르는 구조, 화학결합, 그리고 비저항 값의 변화를 조사하였다. $(WN_x)$ 박막 증착시 $N_2$ 유량비를 20%, 40%, 60%로 늘려감에 따라 그 구조는 각각 bcc $\beta$-W상, 비정질상, 그리고 fcc W$_2$N상으로 변화하였으며, 비정질상이 형성되었을 때 박막 표면이 가장 평탄하였다. $(WN_x)$ 박막이 공기 중에 노출된 경우, 모든 시료 표면에서 $WO_3$ 산화물이 형성되었으며, $N_2$유량비가 증가할수록 $(WN_x)$ 박막내 N의 조성비가 증가하였고, W $4f_{7/2}$ peak가 높은 binding energy 쪽으로 이동하였다. 하지만 시료표면을 $Ar^+$ 이온으로 etching한 후에는 WNx 박막 표면이 비정질화되기 때문에 N의 조성비가 변화함에도 불구하고 $W4f_{7/2}$ / peak가 거의 변화하지 않았다. 박막의 비저항 값은 $N_2$ 유량비가 증가함에 따라 증가하였다.

Rear Surface Passivation with Al2O3 Layer by Reactive Magnetron Sputtering for High-Efficiency Silicon Solar Cell

  • Moon, Sun-Woo;Kim, Eun-Kyeom;Park, Won-Woong;Jeon, Jun-Hong;Choi, Jin-Young;Kim, Dong-Hwan;Han, Seung-Hee
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.211-211
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    • 2012
  • The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

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직류 반응성 sputtering법으로 제막된 ZnO:Al 박막의 물성에 미치는 증착조건 및 타겟의 영향 (Effect of sputtering parameters and targets on properties of ZnO:Al thin films prepared by reactive DC magnetron sputtering)

  • 유병석;오근호
    • 한국결정성장학회지
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    • 제8권4호
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    • pp.592-598
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    • 1998
  • ZnO($Al_2O_3\;2%$ 2% doped) 산화물 타겟과 금속 Zn(Al 2% doped) 타겟을 사용하여 반응성 직류 마그네트론 스퍼터링법으로 산소 가스 및 인가 전력을 조절하면서 AZO(Aluminum doped Zine Oxide) 막을 증착하였다. 비저항과 평균 투과율을 고려할 때 최적의 투명전도성을 보이는 조건은 산화물 타겟의 경우 산소가스의 비가 $0.5{\times}10^{-2}~1.0{\times}10^{-2}$범위이며, 금속 타겟의 경우 인가전력 0.6kW에서는 0.215~0.227, 1.0kW에서는 0.305~0.315이었다. 각 최적조건에서 제막된 AZO 막의 비저항은 $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}cm$cm으로 타겟에 의한 차이는 없었다.

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직류 및 고주파 마그네트론 스퍼터링법으로 증착한 Ti-Al-V-N 박막의 특성 (Characterizations of Ti-Al-V-N Films Deposited by DC and RF Reactive Magnetron Sputtering)

  • 손용운;정인화;이영기
    • 열처리공학회지
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    • 제13권6호
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    • pp.398-404
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    • 2000
  • The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

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