• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.353-362
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• 2022

Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb₂O₅, | SiO₂ structure and antistatic films of ITO designed on 100 × 100 × 3 mmt sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 𝛺/☐ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb₂O₅ 64 nm | SiO₂ 41 nm | sodalime glass | ITO 10 nm | Nb₂O₅ 64 nm | SiO₂ 41 nm.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.224-229
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• 2010

Indium oxide $(In_2O_3)$ thin films have been prepared on glass substrate by using radio-frequency reactive magnetron sputtering with changing the oxygen flow ratio. The substrate temperature was kept at a fixed value of $400^{\circ}C$, and the sputtering gas and reactive gas were supplied with argon and oxygen, respectively. The oxygen partial flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 10%, 20%, 30%, 40%, and 50%. The optical, electrical, and structural properties of the deposited thin films were investigated by using ultraviolet-visible-near infrared spectrophotometer, Hall measurement, and X-ray diffractometer and scanning electron microscopy. The $In_2O_3$ thin film deposited at 20% of oxygen flow ratio showed an average transmittance of 86% in the wavelength range of 430~1,100 nm, an electrical resistivity of $1.1{\times}10^{-1}{\Omega}cm$. The results show that the transparent conducting films with optimum conditions can be achieved by controlling the oxygen flow ratio.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.296.1-296.1
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• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.160-160
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• 2006

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.227.2-227
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.126-126
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.196-196
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• 2002

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.11a
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• pp.55-56
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• 1998

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.815-819
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• 2014

Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.65-69
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• 2011

The $Tio_2$ films were prepared on glass, silicon and quartz substrate at different temperature by radio frequency reactive magnetron sputtering under different flow ratios of Ar and O2 gases. The films were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-VIS spectrophotometer. Only the anatase phase was observed in films and their diffaction peaks increased with temprature of substrate. The size of crystallites decreased with higher concentration of oxygen. Refractive index and optical absorption of thin films decreased with higher concentration of oxygen. The thin films which have good transmittance spectra and smooth surface, deposited in the sputtering ambient with 10 % of $O_2$ at the temperature from $400{\circ}C$ to $300{\circ}C$.