• Progress in Superconductivity and Cryogenics
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• v.20 no.4
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• pp.46-49
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• 2018

To improve in-field critical current densities ($J_c$) of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) coated conductors(CCs) fabricated by the reactive co-evaporation by deposition and reaction (RCE-DR) process, employing the nominal composition of Gd:Ba:Cu=1:1:2.5, we tried to refine the $Gd_2O_3$ particles trapped in the GdBCO superconducting matrix. For this purpose, we carefully selected the processing conditions on the stability phase diagram of GdBCO for this composition. By lowering the growth temperature of $Gd_2O_3$ in the liquid, we could refine the average particle size of $Gd_2O_3$ particles trapped in the GdBCO matrix and also achieve the zero-resistive transition temperatures ($T_{c,zero}$) of 92.3~94.2 K. Unfortunately, however, it was unsuccessful to achieve enhanced in-field $J_c$ values from these samples because of an air-contamination of the amorphous precursor film before its conversion into crystalline GdBCO film, suggesting that any exposure of the amorphous precursor film to air is fatal in obtaining high performance GdBCO CCs via the RCE-DR process.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.417-423
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• 2007

Oxy-gasification or oxygen-blown gasification, enables a clean and efficient use of coal and opens a promising way to CO2 capture. The coal gasification process of a slurry feed type, entrained-flow coal gasifier was numerically predicted in this paper. The purposes of this study are to develop an evaluation technique for design and performance optimization of coal gasifiers using a numerical simulation technique, and to confirm the validity of the model. By dividing the complicated coal gasification process into several simplified stages such as slurry evaporation, coal devolatilization, mixture fraction model and two-phase reactions coupled with turbulent flow and two-phase heat transfer, a comprehensive numerical model was constructed to simulate the coal gasification process. The influence of turbulence on the gas properties was taken into account by the PDF (Probability Density Function) model. A numerical simulation with the coal gasification model is performed on the Conoco-Philips type gasifier for IGCC plant. Gas temperature distribution and product gas composition are also presented. Numerical computations were performed to assess the effect of variation in oxygen to coal ratio and steam to coal ratio on reactive flow field. The concentration of major products, CO and H2 were calculated with varying oxygen to coal ratio (0.2-1.5) and steam to coal ratio(0.3-0.7). To verify the validity of predictions, predicted values of CO and H2 concentrations at the exit of the gasifier were compared with previous work of the same geometry and operating points. Predictions showed that the CO and H2 concentration increased gradually to its maximum value with increasing oxygen-coal and hydrogen-coal ratio and decreased. When the oxygen-coal ratio was between 0.8 and 1.2, and the steam-coal ratio was between 0.4 and 0.5, high values of CO and H2 were obtained. This study also deals with the comparison of CFD (Computational Flow Dynamics) and STATNJAN results which consider the objective gasifier as chemical equilibrium to know the effect of flow on objective gasifier compared to equilibrium. This study makes objective gasifier divided into a few ranges to study the evolution of the gasification locally. By this method, we can find that there are characteristics in the each scope divided.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.27 no.3
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• pp.144-157
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• 2022

Noble gases, which are chemically inert and behave conservatively in marine environments, have been used as tracers of physical processes such as air-sea gas exchange, mixing of water masses, and distribution of glacial meltwater in the ocean. For precise measurements of Ne, Ar, and Kr, we developed a mass spectrometric system consisting of a quadrupole mass spectrometer (QMS), a high vacuum preparation line, an activated charcoal cryogenic trap (ACC), and a set of isotope standard gases. The high vacuum line consists of three sections: (1) a sample extraction section that extracts the dissolved gases in the sample and mixes them with the standard gases, (2) a gas preparation section that removes reactive gases using getters and separates the noble gases according to their evaporation points with the ACC, and (3) a gas analysis section that measures concentrations of each noble gas. The ACC attached to the gas preparation section markedly lowered the partial pressures of Ar and CO₂ in the QMS, which resulted in a reduced uncertainty of Ne isotope analysis. The isotope standard gases were prepared by mixing ²²Ne, ³⁶Ar, and ⁸⁶Kr. The amounts of each element in the mixed standard gases were determined by the reverse isotope dilution method with repeated measurements of the atmosphere. The analytical system achieved precisions for Ne, Ar, and Kr concentrations of 0.7%, 0.7%, and 0.4%, respectively. The accuracies confirmed by the analyses of air-equilibrated water were 0.5%, 1.0%, and 1.7% for Ne, Ar, and Kr, respectively.

• Food Science of Animal Resources
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• v.32 no.6
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• pp.820-827
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• 2012

This study was performed to evaluate the effect of yam (Diocorea japonica) extract by methanol on sausage quality during cold storage. Yam extracts were prepared by 70% methanol and concentrated using rotary evaporation. The total phenol contents of the extracts were 123.03 mg/g. 1,1'-diphenyl-2-picrylhydrazyl (DPPH) scavenging activity and super oxide dismutase (SOD) activity of the extracts were increased with dose dependently. Nitrite scavenging activity was also increased with the increase of concentration of yam extracts; in particular, 70 ${\mu}g/mL$ of the extracts showed 57.12% of nitrite scavenging activity. Sausages containing yam extracts showed lower pH than that of the control. In color, the lightness ($L^*$) of sausages with 1.0% of the yam extracts was lower than that of the control. Redness and yellowness of the sausages with 1.0% of the yam extracts were higher than those of the control. Thiobarbituric acid reactive substances (TBARS) value of the sausage with 1.0% of the extracts was lower than those of the control on days 9 and 12. However, the hardness of the sausage was increased with an increase in yam extracts. From these results, the yam extracts showed high antioxidant activity; moreover, it also retards the lipid oxidation of the sausages during cold storage. The yam extracts could be used as additives to prevent lipid oxidation of the sausage. Further study should be conducted in order to identify the optimum concentration of the extracts in meat products.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.101-108
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• 1993

$TiO_{2}$/Se : Te heterojunction for color sensor has been fabricated by RF reactive sputtering and thermal evaporation methods onto glass substrate. The optimum deposition condition of $TiO_{2}$ films was such that RF power was 120 W, substrate temperature was $100^{\circ}C$, oxygen concentration was 50%, working pressure was 50 mTorr for the $TiO_{2}$ film thickness of $1000{\AA}$. In this case, the optical transmittance of $TiO_{2}$ film at 550 nm-wavelength was 85%, resistivity was $2{\times}10^9{\Omega}{\cdot}cm$, refractive index was 2.3, and optical bandgap was 3.58 eV. The composition ratio of 0 to Ti by AES analysis was 1.7. When $TiO_{2}$ films were annealed at $400^{\circ}C$ for 30 min. in $O_{2}$ ambient, the optical transmittance of $TiO_{2}$ films at the wavelength range of $300{\sim}580$ nm was improved from 0 to 25%. When Se : Te films were annealed at $190^{\circ}C$ for 1 min., photosensitivity under illumination of 1000 lux was 0.75. The optical bandgap of Se : Te films was 1.7 eV. The structures of Se : Te films were the hexagonal with (100) and (110) orientation. The spectral response of a-Se was improved by the addition of Te, especially in the long wavelength region. The $TiO_{2}$/Se : Te heterojunction showed wide spectral response, and more improved one than that of a-Si film in the blue light region.