• Journal of Power Electronics
• /
• 제5권2호
• /
• pp.109-119
• /
• 2005

This paper deals with the performance analysis of static compensator (STATCOM) based voltage regulator for self­excited induction generators (SEIGs) supplying balanced/unbalanced and linear/ non-linear loads. In practice, most of the loads are linear. But the presence of non-linear loads in some applications injects harmonics into the generating system. Because an SEIG is a weak isolated system, these harmonics have a great effect on its performance. Additionally, SEIG's offer poor voltage regulation and require an adjustable reactive power source to maintain a constant terminal voltage under a varying load. A three-phase insulated gate bipolar transistor (IGBT) based current controlled voltage source inverter (CC- VSI) known as STATCOM is used for harmonic elimination. It also provides the required reactive power an SEIG needs to maintain a constant terminal voltage under varying loads. A dynamic model of an SEIG-STATCOM system with the ability to simulate varying loads has been developed using a stationary d-q axes reference frame. This enables us to predict the behavior of the system under transient conditions. The simulated results show that by using a STATCOM based voltage regulator the SEIG terminal voltage can be maintained constant and free from harmonics under linear/non linear and balanced/unbalanced loads.

• Journal of Electrical Engineering and Technology
• /
• 제12권1호
• /
• pp.53-63
• /
• 2017

The increasing of wind power penetration level presents challenges in classical optimal reactive power dispatch (ORPD) which is usually formulated as a deterministic optimization problem. This paper proposes a two-stage stochastic programming model for ORPD by considering the uncertainties of wind speed and load in a specified time interval. To avoid the excessive operation, the schedule of compensators will be determined in the first-stage while accounting for the costs of adjusting the compensators (CACs). Under uncertainty effects, on-load tap changer (OLTC) and generator in the second-stage will compensate the mismatch caused by the first-stage decision. The objective of the proposed model is to minimize the sum of CACs and the expected energy loss. The stochastic behavior is formulated by three-point estimate method (TPEM) to convert the stochastic programming into equivalent deterministic problem. A hybrid Genetic Algorithm-Interior Point Method is utilized to solve this large-scale mixed-integer nonlinear stochastic problem. Two case studies on IEEE 14-bus and IEEE 118-bus system are provided to illustrate the effectiveness of the proposed method.

• 한국정밀공학회지
• /
• 제21권2호
• /
• pp.195-202
• /
• 2004

This paper presents the fabrication and evaluation of mechanical behavior for a peristaltic micropump by flow simulation. The valve-less micropump using the diffuser/nozzle is consists of the lower plate, the middle plate, the upper plate and the tube that connects inlet and outlet of the pump. The lower plate includes the channel and the chamber, and the plain middle plate are made of glass and actuated by the piezoelectric translator. Channels and a chamber on the lower plate are fabricated on high processability silicon wafer by the DRIE(Deep Reactive Ion Etching) process. The upper plate does the roll of a pump cover and has inlet/outlet/electric holes. Three plates are laminated by the aligner and bonded by the anodic bonding process. Flow simulation is performed using error-reduced finite volume method (FVM). As results of the flow simulation and experiments, the single chamber pump has severe flow problems, such as a backflow and large fluctuation of a flow rate. It is proved that the double-chamber micropump proposed in this paper can reduce the drawback of the single-chamber one.

• 콘크리트학회논문집
• /
• 제19권5호
• /
• pp.577-584
• /
• 2007

Steel microfiber (SMF)가 알칼리-실리카 반응 (ASR)에 미치는 영향을 두 가지 종류 (부순 오팔과 직경이 일정한 pyrex 막대)의 반응 골재를 사용하여 알아보았다. ASR에 의한 균열은 기준 모르타르에서 쉽게 발견되었으나 SMF 모르타르의 균열은 아주 제한적이었다. SMF의 균열 진전 제어 메커니즘을 통하여 ASR에 의한 모르타르의 강도 저하와 팽창을 효과적으로 막을 수 있었고, ASR 생성물들의 유동성이 저하됨을 알 수 있었다. ASR 생성물의 성분을 microprobe 분석과 ICP 분광계를 이용하여 알아보았다. SMF의 구속 효과는 액체상태인 ASR 생성물의 높은 나트륨이 온과 규소이온의 농도를 초래하였으며, 높은 이온의 농도는 ASR 알칼리-실리카 반응성을 저하하는 원인으로 생각되어 진다.

• Journal of Advanced Marine Engineering and Technology
• /
• 제27권1호
• /
• pp.134-144
• /
• 2003

Reactive diffusion couples between Fe-5.8at.%Si and (Si wafer, $FeSi_2$, or FeSi alloy) were heat-treated at 1423k. The only layer of $Fe_3Si$ phase was formed in each diffusion couple. The width of $Fe_3Si$ layer was proportional to square root of diffusion time in each kind of diffusion couple. Growth rate of $Fe_3Si$ layer was relied on the concentration of Si in the supplied source of Si atoms. Interdiffusion coefficient of $Fe_3Si$ has been determined from the derived relation between growth rate constant and interdiffusion coefficient in this work. It was shown that the behavior of Kirkendall's void in $Fe_3Si$ layer was not affected by the kind of Si source. But solid solution $\alpha$ was formed in the diffusion couple between Fe-5.8 at.%Si and $Fe_3Si$ alloy. Kirkendall's voids in diffusional $\alpha$ were neglectively smaller than the case of $Fe_3Si$ phase growth.

• 한국항공우주학회지
• /
• 제33권8호
• /
• pp.75-83
• /
• 2005

확대형 채널 내의 정상 천음속 희박 예혼합 연소에 대해 점근해석을 이용하여 연구하였다. 이 모델은 근음속의 유동 속도와 일직선 채널로부터 벗어난 작은 형상변화 그리고 1단 1차 Arrhenius 화학 반응율에 의한 적은 열 방출 사이에서 일어나는 비선형 상호작용에 대하여 탐구하였다. 반응유체 유동은 연소 가스의 질량 분율을 계산하는 상미분 방정식과 연계된 비균질 천음속 미교란 방정식(TSD)을 사용하여 묘사하였다. 또한 점근해석으로부터 반응유체 유동 문제를 지배하는 상사 파라미터들을 유도하였다. 수치 결과들은 대류와 화학반응 그리고 형상효과 사이에 일어나는 복잡한 비선형 상호작용과 유동에 미치는 이것의 영향 등이 잘 나타나 있다.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
• /
• pp.179-180
• /
• 2012

Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

• 한국전기전자재료학회논문지
• /
• 제18권11호
• /
• pp.983-989
• /
• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

• 한국세라믹학회지
• /
• 제37권7호
• /
• pp.686-692
• /
• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.307-307
• /
• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.