• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.177-180
• /
• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.41-43
• /
• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• 한국전기전자재료학회논문지
• /
• 제36권4호
• /
• pp.362-368
• /
• 2023

Multilayered actuators using Pb(Mg_1/3Nb_2/3)O₃-Pb(In_1/2Nb_1/2)O₃-PbTiO₃ (PMN-PIN-PT) crystals have demonstrated excellent properties, but are costly and lack mechanical strength. Textured PMN-PIN-PT ceramics exhibit robust mechanical strength and comparable properties to their single crystals form. However, the development of multilayered actuators using textured PMN-PIN-PT ceramics has not been achieved until now. This study presents the development of a multilayered actuator using textured 0.37PMN-0.29PIN-0.34PT ceramics with an Ag_0.9/Pd_0.1 inner electrode, co-fired at 950℃. A random 0.37PMN-0.29PIN-0.34PT ceramics multilayered actuator was also developed for comparison. The multilayered actuator consisted of 9 ceramic layers (36 ㎛ thickness) with an overall actuator thickness of 0.401 mm. The textured and random 0.37PMN-0.29PIN-0.34PT ceramics-based multilayered actuators achieved displacements of 0.61 ㎛ (0.15% strain) and 0.23 ㎛ (0.057% strain) at a low applied peak voltage of 100 V. These results suggest that the developed multilayered actuator using high-performance textured 0.37PMN-0.29PIN-0.34PT ceramics has the potential to replace expensive single crystal-based actuators cost-effectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.236-236
• /
• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.173-173
• /
• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.80-80
• /
• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

• 한국정보통신학회논문지
• /
• 제23권3호
• /
• pp.291-298
• /
• 2019

본 논문에서는 디지털 홀로그램을 효율적으로 분해하기 위해서 다양한 웨이블릿 함수들을 이용한 프레넬릿 변환 방식을 제안하였다. 제안한 웨이블릿 함수 기반의 프레넬릿 변환들을 구현한 후에 디지털 홀로그램에 적용하고 계수들의 에너지에 대한 특성을 분석한다. 구현한 웨이블릿 함수 기반의 프레넬릿 변환은 광학적으로 획득되거나 혹은 컴퓨터 생성 홀로그램 기법으로 생성된 홀로그램의 복원과 처리에 매우 적합하다. 스플라인 함수의 특성을 분석한 이후에 이를 기반으로 하는 웨이블릿 다해상도 해석 방법에 대해서 살펴본다. 이러한 과정을 통해 광학적 간섭 현상을 통해 생성된 프린지 패턴을 효과적으로 분해할 수 있는 변환 도구를 제안하였다. 다양한 분해 특성을 갖는 웨이블릿 함수기반의 프레넬릿 변환을 구현하였고 이를 이용하여 프린지 패턴을 분해한 결과들을 보인다. 결과를 살펴보면 랜덤 위상의 포함여부에 따라 계수들의 에너지 분포가 크게 다르다는 것을 확인할 수 있다.

• Composites Research
• /
• 제12권4호
• /
• pp.42-54
• /
• 1999

섬유-금속 적층 복합재료(FMLC)는 섬유와 금속 박판으로 구성된 새로운 형태의 구조재로 가볍고 우수한 피로 특성을 가지며 금속과 같이 가소성과 충격저항성이 우수하고, 가공성이 뛰어나다. 본 연구에서는 여러 하중 조건하에 있는 섬유-금속 적층 복합재료를 유전자 알고리듬을 이용하여 최적 설계하였다. 전단변형이론에 근거한 유한요소법을 사용하여 적층판을 해석하였으며, 설계변수로 금속판의 강도와 섬유 층의 수에 따른 적층각도를 두었다. 섬유층과 금속판의 적합도 함수로는 각각 Tasi-Hill failure criterion과 Miser yield criterion을 사용하였다. 유전자 알고리듬의 연산자로는 토너먼트 선택과 균일 교배를 사용하였다. 효율적인 진화를 위해 엘리티스트 모델을 사용하며, 높은 정확도를 가진 해를 얻기 위해 크리프 무작위 탐색(creeping random search) 방법을 통해 더 우수한 자손을 얻었다. 여러 가지 하중 조건에 대하여 최적설계 결과를 나타내었으며, 파괴 지수 측면에서 탄소섬유강화복합재료(CFRP)와 비교하였다. 해석 결과 섬유-금속 적층 복합재료는 탄소섬유강화복합재료에 비하여 집중하중이나 분포하중 형태에 대하여 우수한 특성을 보였으며, 파괴 지수의 편차가 적어 예기치 않은 하중에 잘 견딜 것으로 사료된다.

• Composites Research
• /
• 제30권1호
• /
• pp.1-6
• /
• 2017

에폭시 수지는 3차원 네트웍 구조를 갖는 대표적인 열경화성 수지이다. 최근 에폭시 수지의 네트웍 구조를 제어하여 새로운 기능성 에폭시를 개발하는 연구가 활발히 진행되고 있다. 특히, 액정성 에폭시를 대표로 하는 새로운 개질 에폭시는 랜덤한 형태의 네트웍 구조를 배향 구조로 변경함으로써, 기존의 에폭시로부터 얻을 수 없는 새로운 기능성 발현에 성공하고 있다. 본 논문에서는 액정성 에폭시 수지의 합성과 고방열성 복합재료로의 응용에 관하여 설명하였다.

• 한국해안해양공학회지
• /
• 제15권2호
• /
• pp.86-96
• /
• 2003

방파제의 경사면에 거치된 콘크리트 피복재의 단면파괴에 대한 신뢰성 해석을 수행하였다. 신뢰함수는 피복재의 흔들림 또는 동요의 크기를 정량적으로 나타내는 회전각의 함수로 유도되었다. 방파제 단면에 거치된 피복재의 재질적 성질 및 기하학적 형상과 관련된 확률변수들의 단면파괴에 미치는 영향 정도가 자세히 해석되었다. 또한 파고의 함수로 피복재 개개의 단면파괴에 대한 파괴확률이 산정 되었다. 마지막으로 Bernoulli과정과 허용파손율의 개념을 동시에 고려하여 피복재의 단면파괴가 어떻게 방파제 제체의 파괴확률로 이어지는가가 해석되었다. 허용파손율 개념은 본 연구에서 도입된 것으로, 허용파손율을 어떻게 정의하느냐에 따라 피복재의 단면파괴에 의하여 유발되는 방파제 제체의 파괴확률이 다르게 거동되는 것을 확인할 수 있었다 따라서 상대적으로 수심이 깊은 곳에 중량이 큰 콘크리트 피복재를 사용하여 방파제를 설계할 때는 수리학적 안전성뿐만 아니라 구조적 안전성도 중요하게 고려되어야 한다.