• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.83-90
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• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.3
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• pp.103-111
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• 2021

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCl_n, AlCl_n and SiCl_n gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.

• Nuclear Engineering and Technology
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• v.54 no.1
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• pp.318-325
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• 2022

In this study, composites containing undoped and barium-doped Bi₂WO₆:Ba²⁺were investigated for their shielding against diagnostic X-ray. At first, Bi₂WO₆ and barium-doped Bi₂WO₆ were synthesized with different weight percentages of barium oxide through a hydrothermal process. The as-synthesized nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy (RS). After that, some shields were generated with undoped and barium-doped Bi₂WO₆:Ba²⁺ nanostructure particles incorporated into polyvinyl chloride (PVC) polymer with different thicknesses and 15% weight of the nanostructure. Finally, the prepared samples were exposed to an X-ray tube at 40, 80, and 120 kV voltages, 10 mAs and, 44.5 cm SID (i.e. the distance from the X-ray beam source to the specimen). Linear and mass attenuation coefficients were also calculated for different samples. The results indicated that, among the samples, the one with 7.5 mmol barium-doped Bi₂WO₆ had the most attenuation at the voltage of 40kV, and the attenuation coefficients would increase with an increase in the amount of barium. The samples with 15 and 17.5 mmol barium-doped Bi₂WO₆ had higher attenuation than the others at 80 and 120 kV. Moreover, the half-value layer (HVL), tenth-value layer (TVL) and 0.25 mm lead equivalent thickness were calculated for all the samples. The lowest HVL value was for the sample with 7.5 mmol barium-doped Bi₂WO₆. As the result clearly show, an increment in the barium-doping content leads to a decrease in both HVL and TVL. In every three voltages, 0.25 mm lead equivalent thickness of the barium-doped composites (7.5 mmol and 15 mmol) had less than the other composites. The lowest value of 0.25 mm lead equivalent thickness was 7.5 barium-doped in 40 kV voltage and 15 mmol barium-doped in 80 kV and 120 kV voltages. These results were obtained only for 15% weight of the nanostructure.

• Journal of Conservation Science
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• v.37 no.2
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• pp.77-89
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• 2021

In this study, materials and color formation techniques were assessed for black potteries excavated from the Janghyeon-dong, Jungsan-dong and Gyodong-ri sites during the Proto-Three Kingdoms period in Ulsan, Korea. Although the black potteries were black superficially, the inner cores were either black or reddish yellow. Microscopy analysis identified that body clay was used for reddish iron oxide rich soils with quartz, alkali feldspar and mica, along with grains of myrmechite texture. Additionally, as marginal differences exist in the contents of SiO₂, Fe₂O₃ and CaO, the composition of the host rock and clay distributed around the sites was affected. Thus, we can deduce that pottery was made by soiling at a short distance. Raman spectroscopy results revealed that the black layer of the black pottery was used as amorphous combustion carbon. In addition, as a transparent layer of brown lacquer was observed on the substrate that was in contact with the surface layer, the black layer of the pottery induced black color development by a combination of combustion carbon and lacquer. Based on the mineral composition and microtexture of the body clay, the firing temperature of the potteries seemed to range from 750 to 850℃, whereas the lacquer layer was pyrolyzed at 468℃ by thermal analysis. Therefore, a combined layer of combustion carbon and lacquer, which formed the black color, was painted after the body clay was fired.

• Clean Technology
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• v.25 no.1
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• pp.81-90
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• 2019

A dielectric barrier discharge (DBD) plasma reactor packed with $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst was used for the dry ($CO_2$) reforming of propane (DRP) to improve the production of syngas (a mixture of $H_2$ and CO) and the catalyst stability. The plasma-catalytic DRP was carried out with either thermally or plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst at a $C_3H_8/CO_2$ ratio of 1/3 and a total feed gas flow rate of $300mL\;min^{-1}$. The catalytic activities associated with the DRP were evaluated in the range of $500{\sim}600^{\circ}C$. Following the calcination in ambient air, the ${\gamma}-Al_2O_3$ impregnated with the precursor solution ($Ni(NO_3)_2$ and $Ce(NO_3)_2$) was subjected to reduction in an $H_2/Ar$ atmosphere to prepare $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst. The characteristics of the catalysts were examined using X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectrometry (EDS), temperature programmed reduction ($H_2-TPR$), temperature programmed desorption ($H_2-TPD$, $CO_2-TPD$), temperature programmed oxidation (TPO), and Raman spectroscopy. The investigation revealed that the plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst exhibited superior catalytic activity for the production of syngas, compared to the thermally reduced catalyst. Besides, the plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst was found to show long-term catalytic stability with respect to coke resistance that is main concern regarding the DRP process.