• 한국재료학회지
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• 제14권12호
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• pp.835-839
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• 2004

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.

• 한국재료학회지
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• 제23권7호
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• pp.359-365
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• 2013

We investigated the nanostructural, chemical and optical properties of nc-Si:H films according to deposition conditions. Plasma enhanced chemical vapor deposition(PECVD) techniques were used to produce nc-Si:H thin films. The hydrogen dilution ratio in the precursors, [$SiH_4/H_2$], was fixed at 0.03; the substrate temperature was varied from room temperature to $600^{\circ}C$. By raising the substrates temperature up to $400^{\circ}C$, the nanocrystalite size was increased from ~2 to ~7 nm and the Si crystal volume fraction was varied from ~9 to ~45% to reach their maximum values. In high-resolution transmission electron microscopy(HRTEM) images, Si nanocrystallites were observed and the crystallite size appeared to correspond to the crystal size values obtained by X-ray diffraction(XRD) and Raman Spectroscopy. The intensity of high-resolution electron energy loss spectroscopy(EELS) peaks at ~99.9 eV(Si $L_{2,3}$ edge) was sensitively varied depending on the formation of Si nanocrystallites in the films. With increasing substrate temperatures, from room temperature to $600^{\circ}C$, the optical band gap of the nc-Si:H films was decreased from 2.4 to 1.9 eV, and the relative fraction of Si-H bonds in the films was increased from 19.9 to 32.9%. The variation in the nanostructural as well as chemical features of the films with substrate temperature appears to be well related to the results of the differential scanning calorimeter measurements, in which heat-absorption started at a substrate temperature of $180^{\circ}C$ and the maximum peak was observed at ${\sim}370^{\circ}C$.

• 동력기계공학회지
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• 제17권5호
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• pp.78-85
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• 2013

A high thermal conductivity material, namely graphene is treated by planetary ball milling machine to transport the heat by increasing the temperature. Experiments were performed to assess the heat transfer enhancement benefits of coating the bottom wall of copper substrate with graphene. It is well known that the graphene is unable to disperse into base fluid without any treatment, which is due to the several reasons such as attachment of hydrophobic surface, agglomeration and impurity. To further improve the dispersibility and thermal characteristics, planetary ball milling approach is used to grind the raw samples at optimized condition. The results are examined by transmission electron microscopy, x-ray diffraction, Raman spectrometer, UV-spectrometer, thermal conductivity and thermal imager. Thermal conductivity measurements of structures are taken to support the explanation of heat transfer properties of different samples. As a result, it is found that the planetary ball milling approach is effective for improvement of both the dispersion and heat carriers of carbon based material. Indeed, the heat transfer of the ground graphene coated substrate was higher than that of the copper substrate with raw graphene.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.111.1-111.1
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• 2012

Interest in flexible transparent conducting films (TCFs) has been growing recently mainly due to the demand for electrodes incorporated in flexible or wearable displays in the future. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effect of Au-ion treatment on the electronic structure change of SWNT films was investigated by Raman and XPS.

• 전기학회논문지P
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• 제63권4호
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• pp.351-355
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• 2014

Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increased the reaction area of graphite electrodes used carbon nanotube (CNT) and porous carbon. CNT is limited to device utilization in order to used a metal catalyst by lack of surface area to improve. In contrast carbon nanowall (CNW) is chemically very stable. So this paper, microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow carbon nanowall (CNW) on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. To find the growth properties of CNW according to the reaction gas ratio, we have changed the methane to hydrogen gas ratios (4:1, 2:1, 1:2, and 1:4). The vertical and surficial conditions of the grown CNW according to the gas ratios were characterized by a field emission scanning electron microscopy (FE-SEM) and Raman spectroscopy measurements showed structure variations.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.102-107
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• 2003

This study puts focus on the optimization of growth temperature of CIGS absorber layer which affects severely the performance of solar cells. The CIGS absorber layers were prepared by three-stage co-evaporation of metal elements in the order of In-Ga-Se. The effect of the growth temperature of 1st stage was found not to be so important, and 350$^{\circ}C$ to be the lowest optimum temperature. In the case of growth temperature at 2nd/3rd stage, the optimum temperature was revealed to be 550$^{\circ}C$. The XRD results of CIGS films showed a strong (112) preferred orientation and the Raman spectra of CIGS films showed only the Al mode peak at 173cm$\^$-1/. Scanning electron microscopy results revealed very small grains at 2nd/3rd stage growth temperature of 480$^{\circ}C$. At higher temperatures, the grain size increased together with a reduction in the number of the voids. The optimization of experimental parameters above mentioned, through the repeated fabrication and characterization of unit layers and devices, led to the highest conversion efficiency of 15.4% from CIGS-based thin film solar cell with a structure of Al/ZnO/CdS/CIGS/Mo/glass.

• 한국세라믹학회지
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• 제56권3호
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• pp.284-290
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• 2019

Ternary MoS₂/graphene (G)-TiO₂ photocatalysts were prepared by a simple hydrothermal method. The morphology, phase structure, band gap, and catalytic properties of the prepared samples were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV-vis spectrophotometry, and Brunauer-Emmett-Teller surface area measurement. The H₂ production efficiency of the prepared catalysts was tested in methanol-water mixture under visible light. MoS₂/G-TiO₂ exhibited the highest activity for photocatalytic H₂ production. For 5 wt.% and 1 wt.% MoS₂ and graphene (5MT-1G), the production rate of H₂ was as high as 1989 µmol^-1h^-1. The catalyst 5MT-1G showed H₂ production activity that was ~ 11.3, 5.6, and 4.1 times higher than those of pure TiO₂, 1GT, and 5MT, respectively. The unique structure and morphology of the MoS₂/G-TiO₂ photocatalyst contributed to its improved hydrogen production efficiency under visible light.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.64-64
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• 2000

Since its discovery in 1991, the carbon nanotube has attracted much attention all over the world; and several method have been developed to synthesize carbon nanotubes. According to theoretical calculations, carbon nanotubes have many unique properties, such as high mechanical strength, capillary properties, and remarkable electronical conductivity, all of which suggest a wide range of potential applications in the future. Here we report the synthesis in the catalytic decomposition of acetylene at ~65 $0^{\circ}C$ over Ni deposited on SiO2, For the catalyst preparation, Ni was deposited to the thickness of 100-300A using effusion cell. Different approaches using porous materials and HF or NH3 treated samples have been tried for synthesis of carbon nanotubes. It is decisive step for synthesis of carbon nanotubes to form a round Ni particles. We show that the formation of round Ni particles by heat treatment without any pre-treatment such as chemical etching and observe the similar size of Ni particles and carbon nanotubes. Carbon nanotubes were synthesized by chemial vapour deposition ushin C2H2 gas for source material on Ni coated Si substrate. Ni film gaving 20~90nm thickness was changed into Ni particles with 30~90nm diameter. Heat treatment of Ni fim is a crucial role for the growth of carbon nanotube, High-resolution transmission electron microscopy images show that they are multi-walled nanotube. Raman spectrum shows its peak at 1349cm-1(D band) is much weaker than that at 1573cm-1(G band). We believe that carbon nanotubes contains much less defects. Long carbon nanotubes with length more than several $\mu$m and the carbon particles with round shape were obtained by CVD at ~$650^{\circ}C$ on the Ni droplets. SEM micrograph nanotubes was identified by SEM. Finally, we performed TEM anaylsis on the caron nanotubes to determine whether or not these film structures are truly caron nanotubes, as opposed to carbon fiber-like structures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.9-10
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• 2010

Since the discovery of graphene by mechanical exfoliation from graphite[1], various fabrication methods are available today such as chemical exfoliation, epitaxial graphene on SiC substrates, etc. In view of industrialization, the mechanical exfoliation method may not be an option. Epitaxial graphene on SiC substrates, in this respect, is by far more practical because the method consists of conventional thermal treatments familiar to semiconductor industry. Still, the use of the SiC substrate itself, and hence the incompatibility with the Si technology, lessens the importance of this technology in its future industrialization. In this context, we have tackled the problem of forming graphene on Si substrates (GOS). Our strategy is to form an ultrathin (~80 nm) SiC layer on top of a Si substrate, and to graphitize the top SiC layers by a vacuum annealing. We have actually succeeded in forming the GOS structure [2,3,4]. Raman-scattering microscopy indicates presence of few-layer graphene (FLG) formed on our annealed SiC/Si heterostructure, with the G ($1580\;cm^{-1}$) and the G'($2700\;cm^{-1}$) bands, both related to ideal graphene, clearly observed. Presence of the D ($1350\;cm^{-1}$) band indicates presence of defects in our GOS films, whose elimination remains as a challenge in the future. To obtain qualified graphene films on Si substrate, formation of qualified SiC films is crucial in the first place, and is achieved by tuning the growth parameters into a process window[5]. With a potential for forming graphene films on large-scale Si wafers, GOS is a powerful candidate as a key technology in bringing graphene into silicon technology.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.