• JSTS:Journal of Semiconductor Technology and Science
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• 제2권1호
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• pp.1-6
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• 2002

A new closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD-oriented equivalent-circuit modeling approach.