• 한국위성정보통신학회논문지
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• 제7권1호
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• pp.21-26
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• 2012

우리나라는 지난 20여 년 디지털 정보기술 강국을 지향해 왔지만 선진국에서 이미 투자를 시작한 양자 정보 과학 분야에 대한 연구 및 투자는 거의 이루어지지 않았으며, 양자 정보 통신 기술의 수준 또한 개발 선진국들에 비해 턱없이 부족한 상황이다. 최근, 양자역학에 기반을 두고 있는 양자 정보 처리 및 통신에 대한 연구가 세계적으로 활발히 진행 중이다. 90년대부터 본격화된 양자정보이론의 연구는 양자 컴퓨팅, 양자 통신, 양자 정보이론 등의 분야에서 발전해오고 있으며, 90년대 말에 이르러 양자 암호 통신 및 양자 알고리즘 등의 분야에서 큰 연구 성과를 나타내기 시작하였다. 본 논문에서는, 양자 통신 시스템에서 효율적인 양자 신호 전송 및 검출을 위해 직교 시퀀스를 이용한 효율적인 양자 신호 검출 방안에 대해 논하고자 한다.

• 한국진공학회지
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• 제15권2호
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• pp.209-215
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• 2006

PL (photoluminescence), PLE (PL excitation) 그리고 근 적외선 투과 분광법을 활용하여 InAsGa/GaAs 우물 내 InAs 양자점 구조의 광학적 특성과 전자 버금 띠 구조에 대하여 연구하였다. 투과 스펙트럼과 PLE 스펙트럼으로부터 InAs 양자점 내 세 개의 구속 상태와 InGaAs/GaAs 우물 내에 두 개의 구속 상태가 존재함을 발견하였고, 광전류 스펙트럼에서 관측된 버금 띠 사이 전이들과 연관지어 해석하였다.

• 융합보안논문지
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• 제21권1호
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• pp.3-7
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• 2021

양자 역학을 기반으로 하는 양자암호통신에서는 각각의 정보를 개별적인 광자에 실어 전송하기 때문에 일부만 도청하는 것이 기본적으로 불가능하며, 침입자가 광자를 불법적으로 가로채 수신자에게 재전송을 하여도 양자 복제 불가능성 원리에 의해 같은 정보를 광자에 실어 보내는 것이 불가능하다. 한편 네트워크 기반 다양한 서비스의 폭발적 증대와 함께 해당 서비스의 보안성 보장이 필수적으로 요구되면서 양자암호 통신망의 구축 및 관련 서비스가 다양한 형태로 추진되고 있다. 그러나 양자키 분배(QKD: Quantum Key Distribution) 기술의 발전과는 별개로 이를 활용한 네트워크 구축 및 다양한 양자암호 기반 서비스 제공 방안에 관해서는 많은 연구가 필요한 상태이다. 본 논문에서는 양자암호 장치를 기반으로, 다양한 양자암호 통신망 장비 간에 양자키를 전달하고 암호화된 전송환경 구현을 위한 통합 데이터 구조를 제안하였다.

• 전자공학회논문지SC
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• 제44권3호
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• pp.45-50
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• 2007

1550nm의 파장대를 이용하는 자동 위상보정 양자암호 시스템을 소개한다. 양자키 분배 시스템에서 자동위상보정된 양자키 분배를 위한 메인 컨트롤보드와 phase modulator를 제어할 수 있는 보드를 제작하였고, 단일광자검출기를 위한 dark count당 photon count, quantum key distribution rate($R_{sift}$)와 quantum bit error rate(QBER)값을 측정하였다. 이 시스템은 25km의 광섬유상에서 quantum bit error rate(QBER) 3.5%의 결과값을 얻었고, 이는 상용화가 가능할 것으로 예상된다.

• 한국재료학회지
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• 제22권3호
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• pp.140-144
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• 2012

Compared with bulk material, quantum dots have received increasing attention due to their fascinating physical properties, including optical and electronic properties, which are due to the quantum confinement effect. Especially, Luminescent CdSe quantum dots have been highly investigated due to their tunable size-dependent photoluminescence across the visible spectrum. They are of great interest for technical applications such as light-emitting devices, lasers, and fluorescent labels. In particular, quantum dot-based light-emitting diodes emit high luminance. Quantum dots have very high luminescence properties because of their absorption coefficient and quantum efficiency, which are higher than those of typical dyes. CdSe quantum dots were synthesized as a function of the synthesis time and synthesis temperature. The photoluminescence properties were found strongly to depend on the reaction time and the temperature due to the core size changing. It was also observed that the photoluminescence intensity is decreased with the synthesis time due to the temperature dependence of the band gap. The wavelength of the synthesized quantum dots was about 550-700 nm and the intensity of the photoluminescence increased about 22~70%. After the CdSe quantum dots were synthesized, the particles were found to have grown until reaching a saturated concentration as time increased. Red shift occurred because of the particle growth. The microstructure and phase developments were measured by transmission electron microscopy (TEM) and X-ray diffractometry (XRD), respectively.

• Journal of Information Display
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• 제13권2호
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• pp.91-95
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• 2012

Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.127-130
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• 2005

The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy and electroluminescence measurements. As the quantum well growth time was changed, the wavelength was varied from 451 to 531 nm. In the varied current conditions, the blue LED with the InN MQW structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN MQW structures do not show the color temperature changes with the variations of applied currents.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1027-1031
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• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.121-125
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square- and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.19-23
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.