• 제목/요약/키워드: quantum effect

검색결과 655건 처리시간 0.035초

Peak-to-zero modulation of optical absorption via electrically controllable quantum interference

  • Lee, Byoung-Ho;Kim, Kyoung-Youm
    • Journal of the Optical Society of Korea
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    • 제6권2호
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    • pp.33-36
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    • 2002
  • We propose a modulation scheme of optical absorption in a coupled asymmetric quantum well (QW) structure via electrically controllable quantum interference. It is based on the parallel-perpendicular energy coupling effect. We show that by applying an external electric Held in the parallel direction (to the QW layers), we can obtain a maximum (peak-type) absorption at a specific wavelength where absorption cancellation would occur due to electrically induced transparency without such an external Held .

시간지연을 이용한 양자비밀직접통신 (Quantum Secure Direct Community using Time Lag)

  • 임광철;임동호
    • 한국정보통신학회논문지
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    • 제21권12호
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    • pp.2318-2324
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    • 2017
  • 차세대 암호로 대두 되고 있는 양자암호는 양자키전송 프로토콜과 양자비밀직접통신으로 나뉘어 연구되고 있다. 양자키전송 프로토콜은 사용상의 비효율성 때문에 현대암호와 병합하여 사용하거나 OTP를 포기한 형태로 사용될 수 있다. 본 고에서는 양자키전송이 아닌 직접통신을 양자암호화 하여 진행하는 알고리즘을 제안하였다. 양자비밀 직접통신을 구현하는 방식은 2채널 방식을 이용하였다. 두 채널 중 한쪽 채널에 아인슈타인의 중력장에의한 시간지연 함수를 적용하여 두 채널간 시간차를 적용하는 방식의 양자비밀직접통신 프로토콜을 설계 하였다. 제안하는 시간 지연 효과는 중력렌즈 현상을 반영한 것으로 점질량에 의한 시간지연을 제안하였다. 원심가속도를 이용한 중력 발생기는 점질량계에 포함되며 이를 이용한 시간지연은 중력계의 변화에 의한 상관관계를 보임을 알 수 있다.

Quantum Confinement Effect Induced by Thermal Treatment of CdSe Adsorbed on $TiO_2$ Nanostructure

  • Lee, Jin-Wook;Im, Jeong-Hyeok;Park, Nam-Gyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.213-213
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    • 2012
  • It has been known that quantum confinement effect of CdSe nanocrystal was observed by increasing the number of deposition cycle using successive ionic layer adsorption and reaction (SILAR) method. Here, we report on thermally-induced quantum confinement effect of CdSe at the given cycle number using spin-coating technology. A cation precursor solution containing $0.3\;M\;Cd(NO_3)_2{\cdot}4H_2O$ is spun onto a $TiO_2$ nanoparticulate film, which is followed by spinning an anion precursor solution containing $0.3\;M\;Na_2\;SeSO_3$ to complete one cycle. The cycle is repeated up to 10 cycles, where the spin-coated $TiO_2$ film at each cycle is heated at temperature ranging from $100^{\circ}C$ to $250^{\circ}C$. The CdSe-sensitized $TiO_2$ nanostructured film is contacted with polysulfide redox electrolyte to construct photoelectrochemical solar cell. Photovoltaic performance is significantly dependent on the heat-treatment temperature. Incident photon-to-current conversion efficiency (IPCE) increases with increasing temperature, where the onset of the absorption increases from 600 nm for the $100^{\circ}C$- to 700 nm for the $150^{\circ}C$- and to 800 nm for the $200^{\circ}C$- and the $250^{\circ}C$-heat treatment. This is an indicative of quantum size effect. According to Tauc plot, the band gap energy decreases from 2.09 eV to 1.93 eV and to 1.76 eV as the temperature increases from $100^{\circ}C$ to $150^{\circ}C$ and to $200^{\circ}C$ (also $250^{\circ}C$), respectively. In addition, the size of CdSe increases gradually from 4.4 nm to 12.8 nm as the temperature increases from $100^{\circ}C$ to $250^{\circ}C$. From the differential thermogravimetric analysis, the increased size in CdSe by increasing the temperature at the same deposition condition is found to be attributed to the increase in energy for crystallization with $dH=240cal/^{\circ}C$. Due to the thermally induced quantum confinement effect, the conversion efficiency is substantially improved from 0.48% to 1.8% with increasing the heat-treatment temperature from $100^{\circ}C$ to $200^{\circ}C$.

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Study on Efficiency Droop in a-plane InGaN/GaN Light Emitting Diodes

  • Song, Hoo-Young;Suh, Joo-Young;Kim, Eun-Kyu;Baik, Kwang-Hyeon;Hwang, Sung-Min;Yun, Joo-Sun;Shim, Jong-In
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.145-145
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    • 2011
  • Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.

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온도에 따른 InZnP/ZnSe/ZnS (핵/다중껍질) 양자점의 형광 특성 변화 (The Effect of Temperature on the Photoluminescence Properties of the InZnP/ZnSe/ZnS (Core/Multishell) Quantum Dots)

  • 손민지;정현성;이윤기;구은회;방지원
    • 한국전기전자재료학회논문지
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    • 제31권7호
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    • pp.443-449
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    • 2018
  • We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

비카드뮴계 InZnP/ZnSe/ZnS 코어쉘 양자점의 발광 특성 (Luminescence Properties of Cd-Free InZnP/ZnSe/ZnS Core/Shell Quantum Dots)

  • 이영기;이민상;이정미;원대희;김종만
    • 한국전기전자재료학회논문지
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    • 제34권6호
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    • pp.454-460
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    • 2021
  • In this work, we synthesized alloy-core InZnP quantum dots, which are more efficient than single-core InP quantum dots, using a solution process method. The effect of synthesis conditions of alloy core on optical properties was investigated. We also investigated the conditions that make up the gradient shell to minimize defects caused by lattice mismatch between the InZnP core and ZnS is 7.7%. The stable synthesis temperature of the InZnP alloy core was 200℃. Quantum dots consisting of three layered ZnSe gradient shell and single layered ZnS exhibited the best optical property. The properties of quantum dots synthesized in 100 ml and in 2,000 ml flasks were almost equal.

Effect of Photo-darkening on the Response Time of PbSe Quantum-dots Doped Optical Fiber

  • Watekar, Pramod R.;Lin, Aoxiang;Ju, Seong-Min;Han, Won-Taek
    • 한국광학회:학술대회논문집
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    • 한국광학회 2008년도 동계학술발표회 논문집
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    • pp.251-252
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    • 2008
  • We fabricated silica glass optical fiber containing PbSe quantum-dots (QD) of average size 3.2 nm. The response time of the PbSe-QD doped optical fiber was measured to be around 200 ps. However, after exposure to 1064 nm laser emission for 15 minutes, the response time dramatically reduced to around 2.5 ps, which may be due to photo-darkening effect.

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