• Proceedings of the Korea Information Processing Society Conference
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• 2019.05a
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• pp.129-132
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• 2019

현재 양자컴퓨터 개발에 대한 전폭적인 연구가 이루어지고 있다. 지금의 양자컴퓨터의 개발수준은 기존 암호 시스템에 위협이 될 정도는 아니지만, 가까운 미래에 다가올 양자컴퓨터 시대에 대한 양자내성암호가 필요한 상황이다. 이에 양자내성암호 표준화를 위해 미국 NIST는 공모전을 열었고, 본 논문에서는 양자컴퓨터 개발현황과 NIST(National Institute of Standards and Technology) 양자내성암호 공모전의 암호알고리즘 설명과 동향을 살펴보고자 한다.

• ETRI Journal
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• v.44 no.3
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• pp.504-511
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• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.298-298
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• 2014

Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.

• Proceedings of the Korea Information Processing Society Conference
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• 2017.11a
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• pp.360-362
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• 2017

올해 초, 구글(Google)이 SHA-1의 충돌 현상을 입증했다. 이것은 모든 타 암호 알고리즘 역시 안전할 수 없다는 것을 뜻하며, 향후 SHA-256을 사용하는 비트코인도 취약해질 수 있음을 의미한다. 이유인즉슨, 비트코인에서 사용되는 암호 및 해시 알고리즘은 답을 찾기 위해 상당한 시간이 소요되지만, 양자 컴퓨터의 큐비트를 바탕으로 하는 연산처리 능력은 그 시간을 대폭 감소시킬 수 있기 때문이다. 본 논문에서는 이와 같은 양자 컴퓨터가 비트코인에 얼마나 위협적일 수 있는지와 더불어 양자 컴퓨터 출현에 대비하고자 등장한 새로운 암호 화폐인 Byteball 및 QRL코인을 살펴보고자 한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1467-1469
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• 2007

We report on the effect of ambient gas on the OLED degradation. The operating voltage and quantum efficiency increases when the device is exposed to the atmospheric gas and then returns to the initial level of the device in vacuum when the atmospheric gas is evacuated. These changes in the OLED performance can be attributed to the ambient gas pressure.

• Proceedings of the Korea Information Processing Society Conference
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• 2014.11a
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• pp.118-121
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• 2014

격자 양자 색역학(Lattice Quantum ChromoDynamics; Lattice QCD)은 자연계에 존재하는 중력, 전자 기력, 약한 핵력, 그리고 강한 핵력 등의 기본적인 상호작용 중 강한 핵력의 상호작용을 이해하기 위한 핵물리 분야의 이론이다. 이 물리 역학은 몬테 카를로(Monte Carlo) 기법을 이용하여 대규모 수치 연산을 필요로 하고, 수행시간 단축을 위하여 병렬처리가 필요하다. 본 논문에서는 격자 양자 색역학에서 요구되는 대규모 수치 연산에 대하여 마이크로프로세서와 성능가속기에 최적의 작업부하 분배를 통한 이기종 병렬처리 방법을 제안하고 성능가속기반을 사용한 방법과 제안 방법의 성능을 비교한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1407-1410
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• 2007

This work reports on three primary color fluorescent white organic light emitting diode (WOLED) with simple device structure where only a part of the hole transporting layer was doped with dye. The maximum luminance of the device reaches $35000\;cd/m^2$ at a drive voltage below 11V and external quantum efficiency of the device is above 1% in the wide range of luminance from 10 to $35000\;cd/m^2$ and reaches its highest 1.6% at $500\;cd/m^2$. The chromaticity coordinate shift of the device is negligible in this wide range of luminance. The blue shift of emission color with an increase of current density was attributed to the narrowing of recombination zone width with raise of current density.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1042-1045
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• 2006

The electrical and optical properties of electrophosphorescent organic light-emitting diodes (OLEDs) with modified hole blocking layer (HBL) were investigated. Well-known 2,9-dimethyl-4,7- diphenyl-1,10-phenanthroline (BCP) HBL is mixed with electrophosphorescent host material (4,4'-N,N'- dicarbazole-biphenyl: CBP) or electrophosphorescent dopant material (fac-tris(2-phenylpyridine) iridium: $Ir(ppy)_3$) or both. The highest external quantum efficiency was obtained in the device with $BCP-CBP-Ir(ppy)_3$ mixed HBL and we attribute this result to the additional charge recombination in mixed-HBL.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1410-1412
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• 2005

We present that the electroluminescence (EL) efficiency can be improved by doping an electron transport layer (ETL) with organic materials which can make electron current increase. The electron transport layer of aluminum tris(8 -hydroxyquinoline) (Alq3) is doped with 2-(4-Biphenylyl)-5-(4-tertbutylphenyl)- 1,3,4-oxadiazole) (butyl-PBD) to enhance the electron mobility of the ETL. The higher quantum efficiency of device having ETL using Alq3 doped with butyl-PBD can be attributed to the improved electron and hole balance.

• Journal of Information Display
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• v.12 no.4
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• pp.219-222
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• 2011

Iridium-(III)-bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^2$' ]picolinate-based blue phosphorescent organic light-emitting diodes with different electron transport materials were fabricated. Each electron transport material had different electron mobilities and triplet energies. The device with 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene had the highest external quantum efficiency (20.1%) and luminous current efficiency (33.1 cd/A) due to its high electron mobility and triplet energy. The operational stability of each device was also compared with that of the others. The device with 2,2',2"(1,3,5-benzenetriyl)tris-(1-phenyl-1H-benzimidazole) was found to have a longer lifetime than the other devices.