• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.65-68
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• 2000

Polyethylene, has long history and is widely used, was researched due to good electrical properties by many authors. But PE under stress has the critical defects of space charge accumulation and tree growth, so various methods such as catalyst, additives and blend to improve these problems have been execute, of which we selected blending method. As in our previous papers we investigated electrical conduction, dielectric and AC dielectric breakdown characteristics, we did DC dielectric breakdown characteristics in this paper. We selected pure LLDPE, pure EVA and LLDPE films mixed with EVA as specimens, which were mixed with the weight percentages of 50, 60, 70 and 80[wt%] to be thin film. DC applying voltage speed was 500[V/sec]. The relation between dielectric breakdown characteristics and the variations of super structure due to mixing was investigated, and especially trap level at amorphous region, threshold energy increment of conductive electron at free volume were considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.65-68
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• 2000

Polyethylene, has long history and is widely used, was researched due to good electrical properties by many authors. But PE under stress has the critical defects of space charge accumulation and tree growth, so various methods such as catalyst, additives and blend to improve these problems have been execute, of which we selected blending method. As in our previous papers we investigated electrical conduction, dielectric and AC dielectric breakdown characteristics, we did DC dielectric breakdown characteristics in this paper. We selected pure LLDPE, pure EVA and LLDPE films mixed with EVA as specimens, which were mixed with the weight percentages of 50, 60, 70 and 80[wt%] to be thin film. DC applying voltage speed was 500[V/sec]. The relation between dielectric breakdown characteristics and the variations of super structure due to mixing was investigated, and especially trap level at amorphous region, threshold energy increment of conductive electron at free volume were considered.

• Korean Journal of Food Science and Technology
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• v.30 no.2
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• pp.260-265
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• 1998

In this study, volatile flavor compounds in sesame oils were analyzed by using pure-and-trap method and a gas chromatography. 2-ethoxy-3-ethylpyrazine was used as an internal standard and retention index (Kovat's number) for the volatiles were determined through the use of a n-paraffin $(C_5-C_{25})$ standards. A total of 33 volatile compounds including 14 pyrazines, 7 thiazoles, 4 pyridines, 2 oxazoles and 6 others were identified in the sesame oils. By comparing the total yields of volatile flavor compounds, the pyrazines are the most abundant compounds all of the oil samples and considered as good contributor to characteristic flavor of sesame oil. The oil from the seeds roasted in the electric pan at $200^{\circ}C$ and $230^{\circ}C$ for 10 minutes generated 277.06 ppm, 264.81 ppm in pyrazine and 15.16 ppm, 13.19 ppm in thiazole, respectively. The sensory evaluation of oil samples was also investigated. The sesame oil obtained from the sesame seeds roasted at $200^{\circ}C$ for 10 minutes with electric pan showed good flavor scores and quality among the all of samples.

• Korean Journal of Organic Agriculture
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• v.25 no.4
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• pp.759-772
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• 2017

This experiment was conducted to develop control method for Bemisia tabaci (Gennadius) on eggplant using sticky trap method. According to the color of the sticky traps, the attractiveness of the B. tabaci was the highest in the yellow trap, followed by the green and orange. However, white, blue, red, black and green sticky traps have reduced attractiveness of B. tabaci. In order to improve the efficiency and attractiveness of sticky trap to the B. tabaci, the different kinds of sugars such as glucose, fructose, oligosaccharide, starch syrup and pure sugar were added to sticky traps respectively. However, the effect of B. tabaci attractiveness was low in starch syrup, pure sugar, and non-treated sticky traps. The attracting effect of B. tabaci was depending on the location of sticky trap. The highest value was obtained where sticky traps were located in the top of the eggplant, followed by 30 cm above from the top level. In addition, we were installed up to 40 sticky traps to determine the optimal amount of sticky traps to control B. tabaci in eggplant. When increasing the sticky traps, the number of adult and nymphs of B. tabaci were tended to be decreased significantly. This tendency was more effective in the latter stages than in the early stages. As the number of sticky traps increased, not only the growth rate of eggplant, leaf length, and stem diameter were to be better. But also number of fruits and product marketable value were increased at the early stage of growing as well. The study had proven that the sticky traps had an effect on increasing the yield at the early stage of growth, but the efficiency of controlling decreased due to the high density of B. tabaci of the next generation.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.241-244
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• 2014

Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.411-414
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• 1999

70 ${\AA}$-thick oxides nitridied at various conditions were reoxidized at pemperatures of 900$^{\circ}C$ in dry-O$_2$ ambients for 5～40 mininutes. The gate oxide interface porperties as well as the oxide substrate interface properties of MOS(Metal Oxide Semiconductor) capacitors with various nitridation conditions, reoxidation conditions and pure oxidation condition were investigated. We stuided I$\sub$g/-V$\sub$g/ characteristics, $\Delta$V$\sub$g/ shift under constant current stress from electrical characteristics point of view and breakdown voltage from leakage current point of view of MOS capacitors with SiO$_2$, NO, RNO dielectrics. Overall, our experimental results show that reoxidized nitrided oxides show inproved charge trapping porperites, I$\sub$g/-V$\sub$g/ characteristics and gate $\Delta$V$\sub$g/ shift. It has also been shown that reoxidized nitridied oxide's leakage currented voltage is better than pure oxide's or nitrided oxide's from leakage current(1${\mu}$A) point of view.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.43-50
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• 1995

Eu or Fe doped BGO scintillation crystals were grown by Czochralski method. In order to get information about traps in the grown BGO crystals, we measured trap parameters including activation energy, frequency factor and the kinetic order of thermoluminescence, and compared such parameters with thermoluminescent characteristics of pure BGO scintillation crystals. In addition, optical transmittance of the grown BGO crystals was measured.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.633-638
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• 2014

We report experimental behaviors of condensed $^{87}Rb$ atoms responding to changes in the trap potential of the atomchip. The two-types of adiabatic and non-adiabatic overall changes were implemented by changing the ramp-down speed of the chip-wire current, which can dominantly modify the one-axis magnetic field gradient. Under the adiabatic process, a pure condensate stayed in the initial spin state and collectively oscillated with both monopole and dipole modes, while an atomic cloud above the critical temperature exhibited sound waves in a dense ultracold gas. On the other hand, Bose-Einstein condensate atoms with non-adiabatic perturbation were split into spatially different positions by spin states through spin-flip. We investigated the split ratio among spin states depending on final evaporation frequency. Potential changes, of course, cause collective oscillations regardless of the changing process.

• Analytical Science and Technology
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• v.15 no.1
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• pp.7-14
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• 2002

Laser ablation ion trap mass spectrometry (LAITMS) was developed for the analysis of metal and ceramic samples. For this study, XeCl excimer laser (308 nm) was used for ablating the samples and ITMS was used as a detector. Samples were introduced from outside of a ring electrode and this way of sample introduction was very effective for solid samples when laser ablation was employed. Helium gas was used as a buffer gas, and its effect on sensitivity and some parameters (buffer gas pressure, ion storage time, and cut-off RF voltage) were studied. The optimized conditions were $1{\times}10^{-4}$ Torr of buffer gas pressure, 100 ms of ion storage time and $1150V_{p-p}$ of cut-off RF voltage. From that results, copper (Cu) and molybdenum (Mo) metals were tested with LAITMS and the mass spectra of these pure metals were compared with the natural abundance of isotope ratio. We also examined ceramic samples ($Al_2O_3$, $ZrO_2$) and represented the result of elemental analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.587-587
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• 2013

ZnS is well-known direct band gap II-VI semiconductor, and it attracts intense interest due to its excellent properties of luminescence which enable ZnS to have promising materials for optical, photonic and electronic devices. Especially, the emission wavelength of ZnS falls in the UV absorption band of most organic compoundsand biomolecules, thus it is envisaged that ZnS based devices may find applications in increasingly important fluorescence sensing. We have developed a facile and effective one-step process for the fabrication of single-crystalline and pure-wurtzite ZnS nanostructures possessing sharp band-edge emission at room-temperature having diverse length-to-width ratios. Each of nanostructures was composed of chemically pure, structurally uniform, single-crystalline, and defect-free ZnS. These features not only suppress trap or surface states emission centered at 420 nm, but also enhance UV band-edge emission centered at 327 nm, which give as-synthesized our ZnS nanostructures possible sharp UV emission at room temperature. The reaction medium consisting of mixed solvents such as hydrazine, ethylenediamine, and water as well as proper reaction time and temperature have played an important role in the crystallinity and optical properties of ZnS nanostructures. As-synthesized our ZnS nanostructures possessing sharp UV emission guarantee high potential for both fundamental research and technological applications.