• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

• 열처리공학회지
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• 제13권3호
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• pp.143-150
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• 2000

Ferritic plasma nitrocarburising was performed on pure iron using a modified DC plasma unit. This investigation was carried out with various gas compositions which consisted of nitrogen, hydrogen and carbon monoxide gases, and various gas pressures for 3 hours at $570^{\circ}C$. After treatment, the different cooling rates(slow cooling and fast cooling) were used to investigate its effect on the structure of the compound layer. The ${\varepsilon}$ phase occupied the outer part of the compound layer and ${\gamma}^{\prime}$ phase existed between the ${\varepsilon}$ phase and the diffusion zone. The gas composition of the atmosphere influenced the constitution of the compound layer produced, i.e. high nitrogen contents were essential for the production of ${\varepsilon}$ phase compound layer. It was found that with increasing carbon content in the gas mixture the compound layer thickness increased up to 10%. In the gas pressure around 3 mbar, the compound layer characteristics were slightly effected by gas pressure. However, in the low gas pressure and high gas pressure, the compound layer characteristics were significantly changed. The constitution of the compound layer was altered by varying the cooling rate. A large amount of ${\gamma}^{\prime}$ phase was transformed from the ${\varepsilon}$ phase during slow cooling.

• 공업화학
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• 제19권6호
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• pp.640-644
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• 2008

저온 플라스마 공정을 이용하여 알루미늄 표면에 묻은 윤활유를 세정하였다. 아르곤이 혼합된 산소 플라스마를 사용하였으며, 아르곤의 혼합비, 방전전력, negative DC potential 등의 공정변수를 변화시키면서 실험을 수행하였다. 저온 플라스마 세정 후 케이스의 표면을 FTIR과 EDX를 사용하여 분석한 결과 순수 윤활유의 경우 대부분이 20 min 안에 제거되었다. 제거효율은 저온 플라스마 공정조건에 따라 크게 달라졌으며, 산소에 아르곤이 약 30% 혼합된 기체를 사용하여 케이스에 -500 V 이상의 negative DC potential을 걸어주고 300 W로 처리할 때 가장 높은 효율을 보였다. 하지만, 무기물이 함유된 윤활유의 경우에는 어떤 조건에서도 60% 이상의 제거효율을 얻을 수 없었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.950-952
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• 1998

DC Arc Plasma was applied in order to convert of hydrocabon fuels (Methane) to hydrogen, which has higher available energy. Plasma can generate very high temperatures with a high degree of control, using electricity. Plasma can be used to produce the pure hydrogen fuel, and has rapid response time. In addition, the use of plasma could provide for a greater variety of operating modes including the posibility of virtual elimination of $CO_2$ production by pyrolytic operation and could obtain byproduct (Carbonblack).

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• 한국초전도ㆍ저온공학회논문지
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• 제21권2호
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• pp.36-39
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• 2019

Effects of the spherically shaped Ge and the rod-like carbon-coated Ge on the superconducting properties of $MgB_2$ were investigated. Pure Ge and carbon-coated Ge nano-powders were synthesized under the different amount of $CH_4$ (0 to 5 kPa) by using DC thermal plasma method. When the $CH_4$ was added ~100 nm sized Ge with a spherical shape changed to rod-like morphology with a diameter of ~30-70 nm and a length of ~400-500 nm. Also it was confirmed that thin carbon layers of a few nanometers were formed along the rod length and the agglomerated carbons were found on the edges of rods. Pure spherical Ge and Ge/C rods were mixed and milled with Mg & B precursor to form the doped $MgB_2$ bulk samples by the solid-state reaction method. Almost no change of $T_c$ was noticed for the pure Ge-added $MgB_2$, whereas $T_c$ was found to decrease with the Ge/C-added $MgB_2$ samples. It was found that the pure spherical Ge showed to have a negative effect on the flux pinning of $MgB_2$. However, Ge/C rods can enhance the flux pinning property of $J_c$ due to the coated carbon on Ge rods.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권4호
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• pp.185-189
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• 2004

The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.

• 열처리공학회지
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• 제13권5호
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• pp.318-323
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• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.622-628
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• 2001

We developed 1- and 2-dimensional fluid model for the analysis of a capacitively coupled Ar RF(Radio Frequency) glow discharge. This discharge is in pure Ar gas at the pressure 100[mTorr], frequency 13.56[MHz] and voltage amplitude 120[V}. This model is based on the equations of continuity and electron energy conservation coupled with Poison equation. 2-dimensional model is simulated on the condition of GEC(Gaseous Electronic Conference cell). The geometry of the discharge chamber and the electrodes used in the model is cylindrically simmetric; tow cylinders for the electrodes are surrounded by the grounded chamber. It is shown that 1-dimensional model is very useful on the understanding of RF glow discharge property and of the movement of charged particles. 2-dimensional model predicts off-axis maximum structure as in the experiments and has the results in qualitatively and quantitatively good agreement with the experiments. Effects of dc self-bias voltage, guard ring and reactor geometry is discussed.