• Transactions of Materials Processing
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• v.23 no.7
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• pp.413-418
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• 2014

The current study presents experimental and numerical results on the effect of ultrasonic vibrations on a cylindrical cup drawing of a cold rolled steel sheet(SPCC). An experimental apparatus, which can superimpose high frequency oscillations during deep drawing, was constructed by installing on the tooling ultrasonic vibration generators consisting of a piezoelectric transducer and a resonator. Conventional and vibration-assisted cylindrical deep drawing tests were conducted for various drawing ratios, and the limiting drawing ratios(LDR) for both methods were compared. To evaluate quantitatively the contribution from the ultrasonic vibrations to the reduction of friction between tools and material finite element analyses were conducted. Through a series of parametric analyses, the friction coefficients, which minimized the differences of punch load data between the experiments and simulations, were determined. The results show that the application of ultrasonic vibration effectively improves the LDR by reducing the friction between the tools and the material.

• Journal of the Korean institute of surface engineering
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• v.46 no.1
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• pp.42-47
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• 2013

The strain-induced phase transformation from austenite to martensite is responsible for the high strength and ductility of TRIP steels. However high strength steels are susceptible to hydrogen embrittlement. This study aimed to evaluate the effects of hydrogen on the behavior of hydrogen delayed fracture in TRIP steel with hydrogen charging conditions. The electrochemical hydrogen charging was conducted at each specimen with varying current density and charging time. The relationship between hydrogen concentration and mechanical properties of TRIP steel was established by SP test and SEM fractography. The maximum loads and displacements of the TRIP steel in SP test decreased with increasing hydrogen charging time. The results of SEM fractography investigation revealed typical brittle mode of failure. Thus it was concluded that hydrogen delayed fracture in TRIP steel result from the diffusion of hydrogen through the ${\alpha}$' phase.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.67-78
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• 1984

EAROM device is an n-channel MOS transistor with a control gate stack ed on the floating gate. On account of channel injection type, channel lengths are designed 4-8 $\mu$m and chinnel widths 5-14 $\mu$m. These devices which have fourstructures of different type control gate are designed by NMOS 5 $\mu$m design rule and fabricated by double polysilicon gate NMOS Process. Double ion implantation is applied to increase punchthrough voltage and gate-controlled channel breakdown voltage. The drain and gate voltage for programming was 13-17V and 20-25V, respectively. EPROM cell fabricated could be erased not by optical method but by electrical method. The result of charge retention test showed decrease in stored charges by 4% after 200 hours at 1$25^{\circ}C$.

• Archives of Craniofacial Surgery
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• v.21 no.3
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• pp.202-205
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• 2020

Trichoepithelioma is a benign hair follicle tumor that can undergo malignant transformation into basal cell carcinoma in rare cases. Due to the similar clinical and histological features of trichoepithelioma and basal cell carcinoma, distinguishing between these types of tumors can be a diagnostic challenge. Punch biopsy obtains only a small sample of the entire lesion, and thus inherently involves a risk of misdiagnosis between histologically similar diseases. Therefore, if the possibility of misdiagnosis can reasonably be suspected, clinicians should conduct an excisional biopsy or immunohistochemical staining (e.g., CD10 and Bcl-2) to ensure an exact diagnosis. Although trichoepithelioma is benign, the surgical excision of solitary trichoepithelioma should be considered in order to avoid the possibility of malignant transformation, which has occasionally been documented for multiple familial trichoepitheliomas. Herein, we report a case that was initially misdiagnosed as trichoepithelioma before ultimately being diagnosed as basal cell carcinoma through excision and immunohistochemical staining.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.2
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• pp.149-157
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• 2004

Implicit finite element analysis of the flat surface-straight edge hemming process is performed by using a commercial code ABAQUS/Standard. Methods of finite element modeling for springback simulation and contact pair definition are discussed. An optimal mesh system is chosen through the error analysis that is based on the smoothing of discontinuity in the state variables. This study has focused on the investigation of the influence of process parameters in flanging, pre-hemming and main hemming on final hem quality, which can be defined by turn-down, warp and roll-in. The parameters adopted in this parametric study are flange length, flange angle, flanging die corner radius, face angle and insertion angle of pre-hemming punch, and over-stroke of pre-hemming and main hemming punches.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.3
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• pp.370-375
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• 2010

Tungsten carbide microshaft is used as micro punch, electrode of micro electro discharge machining, and micro tool because of its high hardness and rigidity. In this research, tungsten carbide microshaft was fabricated using electrochemical machining. $H_2SO_4$ solution was used as the electrolyte because it can dissolve tungsten carbide and cobalt simultaneously. Experimentally studied were the effects of electrolyte concentration, machining time, and machining voltage on material removal rate and the shape of the microshaft. To eliminate the effects of bubbles and metal corrosion layer on microshaft shape, the machining was performed below the electrolysis voltage. Three step electrochemical process was suggested to fabricate the straight tungsten carbide microshaft. As a result, a straight tungsten carbide microshaft of $30{\mu}m$ in diameter and $500{\mu}m$ in length was obtained through the proposed three step electrochemical process.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Design & Manufacturing
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• v.10 no.2
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• pp.50-54
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• 2016

In the semiconductor industry the final products were checked for several environments before sell the products. The burning test of memory and chip was implemented in reliability for all of parts. The memory and chip were developed to high density memory and high performance chip, so circuit design was also high integrated and the test bed was needed to be thin and fine pitch socket. LGA(Land Grid Array) IC socket with thin wall thickness was designed to satisfy this requirement. The LGA IC socket plastic part was manufacture by injection molding process, it was needed accuracy, stiffness and suit resin with high flowability. In this study, injection molding process analysis was executed for 2 and 4 cavities moldings with runner, gate and sprue. The warpage analysis was also implemented for further gate removal process. Through the analyses the total deformations of the moldings were predicted within maximum 0.05mm deformation. Finally in consideration of these results, 2 and 4 cavities molds were designed and made and tested in injection molding process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.