• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.374-377
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• 2003

In this paper, turn on characteristics of (Punch-Through Insulated Gate Bipolar Transistor) PT-IGBT has been studied. Based on the transient power loss, turn on charges first base to collector capacitance. Furthermore we present the charge variation in the base including n+ buffer layer to express the transient turn-on characteristics of the device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.16-17
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• 2005

Local lifetime control by ion implantation has become an useful tool for production of modern power devices. In this work, punch-through diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation was executed at the various energy and dose conditions. Characterization of the device was performed by I-V, C-V and Trr measurement. We obtained enhanced reverse recovery time characteristics which was about 45% of original device and about 73% of electron irradiated device. The measurement results showed that proton irradiation was able to effectively reduce minority carrier lifetime.

• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.216-221
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• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.

• 소성∙가공
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• 제18권1호
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• pp.13-19
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• 2009

In the recent years, the production of light-weight products has become important because of increasing demands for the energy savings through weight reduction. Therefore the advanced manufacturing technology with Al alloy is continuously required in many industrial fields. Bending characteristics of Al rectangular tube with hollow and solid section has been analyzed by FE analysis in press bending with wing-die. Bending stress is affected by punch stroke and rotation of wing-die. There were different sectional sagging characteristics between the solid rectangle section and the hollow rectangle section.

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 2000년도 가을 학술발표회 논문집(II)
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• pp.989-994
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• 2000

Nine tests to failure are performed on full-scale eight composite beams with unreinforced web opening having ribbed slabs with formed deck which are perpendicular to the steel section and one steel beam. The effects of slab width, reinforcing of stud, moving of rib, moment-shear ratio are studied. At the low M/V ratio, Vierendeel action around the high moment end of the opening is occurred and the large deflection across the opening and transverse cracking are occurred with increasing of applied load. As the M/V ratio increases, the relative deflection across the opening decreases. And at failure, full tensile strain are occurred at bottom T section of steel beam, and concrete crushes at the High Moment End of the opening. With narrow slabs, diagonal tension failure at the high moment end of the opening is occurred. And with wide slabs, rib punch-through failure is occurred near the high moment end of the opening. The implications for design are discussed.

• Transactions on Electrical and Electronic Materials
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• 제2권3호
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• pp.33-37
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• 2001

A vertical trench electrode type EST has been proposed in this paper. The proposed device considerably improves snapback which leads to a lot of problems of device applications. In this paper, the vertical dual gate Emitter Switched Thyristor (EST) with trench electrode has been proposed for improving snab-back effect. It is observed that the forward blocking voltage of the proposed device is 745V. The conventional EST of the same size were no more than 633V. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and the punch through breakdown of the proposed EST is occurred at latest.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.61-65
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• 2011

The capabilities of finite elements codes allow now accurate simulations of blanking processes when appropriate materials modelling are used. Over the last decade, numerous numerical studies have focused on the influence of process parameters such as punch-die clearance, tools geometry and friction on blanking force and blank profile. In this study, three dimensional finite element analysis is carried out to design a lead frame blanking die using LS-Dyna3D package. After design of the blanking die, an experiment is also carried out to investigate the characteristics of blanking for nickel alloy Alloy42, a kind of IC lead frame material. In this paper, it has been researched the investigation to examine the influence of process parameters such as clearance and air cylinder pressure on the accuracy of sheared plane. Through the experiment results, it is shown that the quality of sheared plane is less affected by clearance and air cylinder pressure.

• 대한기계학회논문집
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• 제13권3호
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• pp.330-336
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• 1989

본 연구에서는 상계해법을 이용하여 축대칭 후방압출에 있어서 압출하중뿐 아니라 소성변형역의 형상 및 비유동영역(dead metal zone)까지 에측이 가능한 단순하고 체계적인 이론해석법을 제안하고 이에 대한 실험을 수행하여 확인해 보고자 한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.424-428
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• 1987

A $2{\mu}m$ CMOS P-well double metal technology has been developed. Phosphorus deep implantation and drive-in diffusion steps were utilized to prevent the low voltage bulk punch through in the short channel, 1.6[${\mu}m$] Leff, PMOS device. Double metal process with the rules of 5[${\mu}m$] 1st metal pitch and 7[${\mu}m$] 2nd metal pitch was successfully implemented by using VLTO, low temperature oxide, as on intermetal dielectric.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.225-230
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• 1994

In this paper, we have fabricated short channel MOSFETs with these parameters to verify the validity of process parameters extraction by DTC method. The experimental results of fabricated short channel devices according to the optimal process parameters demonstrate good device characteristics such as good drain current-voltage characteristics, low body effects and threshold voltage of$\leq$+-.1.0V, high punch through and breakdown voltage of$\leq$12V, low subthreshold swing(S.S) values of$\leq$105mV/decade.