• 소성∙가공
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• 제23권7호
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• pp.413-418
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• 2014

The current study presents experimental and numerical results on the effect of ultrasonic vibrations on a cylindrical cup drawing of a cold rolled steel sheet(SPCC). An experimental apparatus, which can superimpose high frequency oscillations during deep drawing, was constructed by installing on the tooling ultrasonic vibration generators consisting of a piezoelectric transducer and a resonator. Conventional and vibration-assisted cylindrical deep drawing tests were conducted for various drawing ratios, and the limiting drawing ratios(LDR) for both methods were compared. To evaluate quantitatively the contribution from the ultrasonic vibrations to the reduction of friction between tools and material finite element analyses were conducted. Through a series of parametric analyses, the friction coefficients, which minimized the differences of punch load data between the experiments and simulations, were determined. The results show that the application of ultrasonic vibration effectively improves the LDR by reducing the friction between the tools and the material.

• 한국표면공학회지
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• 제46권1호
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• pp.42-47
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• 2013

The strain-induced phase transformation from austenite to martensite is responsible for the high strength and ductility of TRIP steels. However high strength steels are susceptible to hydrogen embrittlement. This study aimed to evaluate the effects of hydrogen on the behavior of hydrogen delayed fracture in TRIP steel with hydrogen charging conditions. The electrochemical hydrogen charging was conducted at each specimen with varying current density and charging time. The relationship between hydrogen concentration and mechanical properties of TRIP steel was established by SP test and SEM fractography. The maximum loads and displacements of the TRIP steel in SP test decreased with increasing hydrogen charging time. The results of SEM fractography investigation revealed typical brittle mode of failure. Thus it was concluded that hydrogen delayed fracture in TRIP steel result from the diffusion of hydrogen through the ${\alpha}$' phase.

• 대한전자공학회논문지
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• 제21권5호
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• pp.67-78
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• 1984

프로팅 게이트 위에 컨트롤 게이트를 갖는 n-채널 이중 다결정 실리콘게이트 EAROM을 제작하였다. 채널 길이는 4-8μm, 채널 폭은 5-14μm로 하여 5μm design rule에 따라 설계하였으며 서로 다른 4가지 컨트롤게이트 구조를 갖는 채널 주입형 기억소자를 얻었다. 그리고 소자의 Punch through 전압과 게이트에 의해 조절되는 채널파괴 전압을 증가시키기 위해 이중 이온주입 (double ion implantation)과 active 영역에 보론이온을 주입 하였다. 프로그래밍을 위해 드레인 전압 및 게이트 전압이 각각 13-l7V 및 20-25V 정도 필요하였다. 그리고 제조된 기억소자의 소거는 광학적 방법뿐 아니라 전기적 방법으로도 가능하였으며 125℃에서 200시간 유지하였을 때 축적된 전자가 약 4 %정도 감소함을 알 수 있었다.

• 대한두개안면성형외과학회지
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• 제21권3호
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• pp.202-205
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• 2020

Trichoepithelioma is a benign hair follicle tumor that can undergo malignant transformation into basal cell carcinoma in rare cases. Due to the similar clinical and histological features of trichoepithelioma and basal cell carcinoma, distinguishing between these types of tumors can be a diagnostic challenge. Punch biopsy obtains only a small sample of the entire lesion, and thus inherently involves a risk of misdiagnosis between histologically similar diseases. Therefore, if the possibility of misdiagnosis can reasonably be suspected, clinicians should conduct an excisional biopsy or immunohistochemical staining (e.g., CD10 and Bcl-2) to ensure an exact diagnosis. Although trichoepithelioma is benign, the surgical excision of solitary trichoepithelioma should be considered in order to avoid the possibility of malignant transformation, which has occasionally been documented for multiple familial trichoepitheliomas. Herein, we report a case that was initially misdiagnosed as trichoepithelioma before ultimately being diagnosed as basal cell carcinoma through excision and immunohistochemical staining.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• 대한기계학회논문집A
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• 제28권2호
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• pp.149-157
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• 2004

Implicit finite element analysis of the flat surface-straight edge hemming process is performed by using a commercial code ABAQUS/Standard. Methods of finite element modeling for springback simulation and contact pair definition are discussed. An optimal mesh system is chosen through the error analysis that is based on the smoothing of discontinuity in the state variables. This study has focused on the investigation of the influence of process parameters in flanging, pre-hemming and main hemming on final hem quality, which can be defined by turn-down, warp and roll-in. The parameters adopted in this parametric study are flange length, flange angle, flanging die corner radius, face angle and insertion angle of pre-hemming punch, and over-stroke of pre-hemming and main hemming punches.

• 한국생산제조학회지
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• 제19권3호
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• pp.370-375
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• 2010

본 연구에서는 전해가공을 이용해서 직경이 균일한 텅스텐 카바이드 미세축을 제작하는 실험을 수행하였다. 전해가공을 통해 미세축으로 사용 가능한 형상을 얻기 위한 최적의 가공 조건에 대해 고찰하였다 이 과정에서 미세축의 형상에 영향을 주는 여러 인자들을 적절하게 조절하여 최적의 형상을 얻을 수 있었다. 그리고 가공된 미세축을 이용하여 적절한 조건으로 2차, 3차 가공을 수행하여 초미세축을 가공할 수 있음을 보였다. 그리하여 실험 결과 직경 $30{\mu}m$, 길이 $500{\mu}m$의 텅스텐 카바이드 미세축을 제작하였다.

• Transactions on Electrical and Electronic Materials
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• 제2권4호
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Design & Manufacturing
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• 제10권2호
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• pp.50-54
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• 2016

In the semiconductor industry the final products were checked for several environments before sell the products. The burning test of memory and chip was implemented in reliability for all of parts. The memory and chip were developed to high density memory and high performance chip, so circuit design was also high integrated and the test bed was needed to be thin and fine pitch socket. LGA(Land Grid Array) IC socket with thin wall thickness was designed to satisfy this requirement. The LGA IC socket plastic part was manufacture by injection molding process, it was needed accuracy, stiffness and suit resin with high flowability. In this study, injection molding process analysis was executed for 2 and 4 cavities moldings with runner, gate and sprue. The warpage analysis was also implemented for further gate removal process. Through the analyses the total deformations of the moldings were predicted within maximum 0.05mm deformation. Finally in consideration of these results, 2 and 4 cavities molds were designed and made and tested in injection molding process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.