• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• 한국초전도ㆍ저온공학회논문지
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• 제11권1호
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• pp.30-34
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• 2009

This paper deals with charging and persistent-current mode operating characteristics of BSCCO magnet load using high-temperature superconducting (HTS) power supply. The HTS power supply consists of two heater-triggered switches, an iron-core transformer with the primary copper winding and the secondary BSCCO solenoid, and a BSCCO magnet load. The magnet load was fabricated by double pancake winding and its inductance is about 21 mH. A hall sensor was installed at the middle of the magnet load to measure the current in the load. In order to investigate the efficient pumping characteristics, operating tests of heater-triggered switch with respect to dc heater current were carried out, and the electromagnet current was determined by considering saturation characteristics of its iron core. The saturation characteristics of charged current in the magnet load were observed with respect to various pumping periods: 12 s, 14 s, 24 s and 32 s. After charging the magnet load, the persistent current was measured. The operating characteristics of the persistent current mode were mainly determined by joint resistance and magnet load.

• 한국초전도ㆍ저온공학회논문지
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• 제6권2호
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• pp.29-34
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• 2004

The linear type flux pump aims to compensate a little bit decremental persistent current of the HTS magnet in NMR and MRI spectrometers. The flux pump mainly consists of DC bias coil, 3-phase AC coil and Nb foil. The persistent current in closed superconductive circuit can be easily adjusted by the 3-phase AC current, its frequency and the DC bias current. In the experiment, it has been investigated that the flux pump can effectively charge the current in the load coil of 543 mH for various frequencies in 18 minutes under the DC bias of 10 A and the AC of 5 $A_{rms}$. The maximum magnitudes of pumping current and load magnet voltage are 0.72 A/min and 20 ㎷, respectively. Based on simulation results by the FEM are proved to nearly agree with experimental ones.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.318-321
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• 2002

Superconductivity has various applications in the whole industry such as the generation of high magnetic field for medical care and diagnosis, the lossless power transmission, environment-friendly vehicles and clean energy storage systems. This paper deals with the High-Tc superconducting(HTS) power supply using heater-triggered switch for the charging of the superconducting magnets. HTS superconducting power supply consists of two heaters, an electromagnet, and Bi-2223 solenoid and Bi-2223 pancake is used as a superconducting load, similar to real HTS magnet. The timing sequential control of two heaters and an electromagnet is an important factor to generate pumping- current in the Bi-2223 load. The thermal analysis of switching parts of the Bi-2223 solenoid according to the heater input was carried out. Based upon the analysis, the 0.8A of heater current were optimally derived. The maximum pumping current reached 1.7A.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2007년도 추계학술대회 논문집
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• pp.295-299
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• 2007

This paper presents the photovoltaic(PV) water pumping system with a maximum power point tracking(MPPT). The wale- pumping system uses a variable speed single phase induction motor(SPIM) driven a centrifugal pimp by field oriented control(FOC) inverter. The MPPT using a DC-DC converter controlled the duty cycle to track maximum power from PV under different insolation conditions. The duty cycle directly relate with a flux producing current control($i_{ds}$). The FOC inverter uses a current control voltage source inverter(CC-VSI). The simulation results are shown that the characteristics and performance of drive system, which varies as each conditions of light by expresses in voltage ($V_{dq}$), current($I_{dq}$), speed of motor and torque.

• 대한전자공학회논문지
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• 제25권7호
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• pp.780-790
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• 1988

We have studied the hot-carrier-induced degradation caused by the high channel electric field due to the decrease of the gate length of MOSFET used in VLSI. Under DC stress, the condition in which maximum substrate current occures gave the worst degradation. Under AC dynamic stress, other conditions, the pulse shape and the falling rate, gave enormous effects on the degradation phenomena, especially at 77K. Threshold voltage, transconductance, channel conductance and gate current were measured and compared under various stress conditions. The threshold voltage was almost completely recovered by hot-injection stress as a reverse-stress. But, the transconductance was rapidly degraded under hot-hole injection and recovered by sequential hot-electron stress. The Si-SiO2 interface state density was analyzed by a charge pumping technique and the charge pumping current showed the same trend as the threshold voltage shift in degradation process.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.97-101
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• 2003

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

• 한국수자원학회논문집
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• 제46권7호
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• pp.719-733
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• 2013

본 연구에서는 죽산천 유역에 대해 지표수와 지하수의 통합거동을 유역 스케일로 장기간 모의할 수 있고 양수정의 공간분포 및 저수지 운영을 복합적으로 고려할 수 있는 유역단위 통합수문해석모형 SWAT-MODFLOW를 적용하여 지하수 양수 및 농업용 저수지가 하천유량에 미치는 영향을 평가하였다. 지하수 양수 및 농업용저수지 고려 유무에 따라 4가지 시나리오(1) 현 지하수 이용량 고려, 저수지 고려, (2) 현 지하수 이용량 고려, 저수지 미고려, (3) 지하수 이용량 미고려, 저수지 고려), (4) 지하수 이용량 미고려, 저수지 미고려(자연상태)를 구성하고 각 시나리오별로 하천유량의 변화를 모의한 결과, 죽산천 유역 출구부를 기준으로 지하수 양수로 인한 영향이 농업용 저수지에 의한 영향보다 상대적으로 크게 발생하였으며, 갈수량은 용수이용이 없는 자연 상태(natural flow)에 비해서 지하수 양수만의 영향으로 약 17%, 저수지만의 영향으로 약 11%, 양수 및 저수지의 복합영향으로 인해 약 23% 만큼 감소하는 것으로 분석되었다. 농업용 저수지로부터 떨어진 거리에 따른 하천유량의 변화를 평가하기 위해서 죽산천 본류를 따라 비갈수량을 산정한 결과, 저수지 관개용수의 회귀수 영향으로 하류로 내려갈수록 비갈수량이 증가하였으며, 죽산천 상류에 위치한 덕산 저수지로부터 약 6.5 km까지는 저수지의 영향이 상당히 미치는 것으로 분석되었다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권4호
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• pp.164-169
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• 2001

This paper deals with comparison of characteristics of continuous-sheet type low-Tc superconducting (LTS) power supply and discrete-sheet type LTS power supply. These characteristics have been analyzed through experiments. These power supplies consist of two exciters, a rotor, a stator, and a LTS load. A continuous-sheet type has a single continuous niobium (Nb) sheet attached to the inner surface of on the stator. In the case of discrete-sheet type, four separated Nb sheets are used. this experiment is using 1.81 mH LTS magnet load and maximum 30 A dc exciter current. A discrete-sheet type is expected to produce much better pumping rate than a continuous-sheet type. The experimental observations have been compared with the theoretical predictions. In this experiment, the maximum pumping-current has reached about 926 A.

• 한국정보통신학회논문지
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• 제11권10호
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• pp.1899-1909
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• 2007

본 논문에서는 TFT-LCD 구동 IC 모듈의 소형화 측면에서 유리한 DC-DC 변환기 회로인 펌핑 커패시터 내장형 크로스-커플드 전하펌프(Cross-Coupled Charge Pump with Internal Pumping Capacitor) 회로가 새롭게 제안되었다. VGH 및 VGL 전하펌프 각각의 입력단과 전하 펌핑 노드를 연결하는 NMOS 및 PMOS 다이오드를 두어, 초기 동작 시 전하 펌핑 노드를 서로 같은 값으로 프리차지하여 대칭 적으로 전하 펌핑을 하도록 하였다. 그리고 첫 번째 전하 펌프의 구조를 다르게 설계하여 펌핑된 전하가 입력단으로 역류되는 현상을 방지하였다. 또한, 펌핑 클럭 구동 드라이버의 위치를 펌핑 커패시터 바로 앞에 두어 기생 저항으로 인한 펌핑 클럭 라인의 전압강하를 방지하여 구동능력을 향상 시켰다. 마지막으로 내장형 펌핑 커패시터를 Stack-MIM 커패시터를 사용하여 기존의 크로스-커플드 전하펌프 보다 레이아웃 면적을 최소화하였다. 제안된 TFT-LCD 구동 IC 용 전하펌프 회로를 $0.13{\mu}m$ Triple-Well DDI 공정을 사용하여 설계하고, 테스트 칩을 제작하여 검증하였다.