• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.453-456
• /
• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• Progress in Superconductivity and Cryogenics
• /
• v.11 no.1
• /
• pp.30-34
• /
• 2009

This paper deals with charging and persistent-current mode operating characteristics of BSCCO magnet load using high-temperature superconducting (HTS) power supply. The HTS power supply consists of two heater-triggered switches, an iron-core transformer with the primary copper winding and the secondary BSCCO solenoid, and a BSCCO magnet load. The magnet load was fabricated by double pancake winding and its inductance is about 21 mH. A hall sensor was installed at the middle of the magnet load to measure the current in the load. In order to investigate the efficient pumping characteristics, operating tests of heater-triggered switch with respect to dc heater current were carried out, and the electromagnet current was determined by considering saturation characteristics of its iron core. The saturation characteristics of charged current in the magnet load were observed with respect to various pumping periods: 12 s, 14 s, 24 s and 32 s. After charging the magnet load, the persistent current was measured. The operating characteristics of the persistent current mode were mainly determined by joint resistance and magnet load.

• Progress in Superconductivity and Cryogenics
• /
• v.6 no.2
• /
• pp.29-34
• /
• 2004

The linear type flux pump aims to compensate a little bit decremental persistent current of the HTS magnet in NMR and MRI spectrometers. The flux pump mainly consists of DC bias coil, 3-phase AC coil and Nb foil. The persistent current in closed superconductive circuit can be easily adjusted by the 3-phase AC current, its frequency and the DC bias current. In the experiment, it has been investigated that the flux pump can effectively charge the current in the load coil of 543 mH for various frequencies in 18 minutes under the DC bias of 10 A and the AC of 5 $A_{rms}$. The maximum magnitudes of pumping current and load magnet voltage are 0.72 A/min and 20 ㎷, respectively. Based on simulation results by the FEM are proved to nearly agree with experimental ones.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2002.02a
• /
• pp.318-321
• /
• 2002

Superconductivity has various applications in the whole industry such as the generation of high magnetic field for medical care and diagnosis, the lossless power transmission, environment-friendly vehicles and clean energy storage systems. This paper deals with the High-Tc superconducting(HTS) power supply using heater-triggered switch for the charging of the superconducting magnets. HTS superconducting power supply consists of two heaters, an electromagnet, and Bi-2223 solenoid and Bi-2223 pancake is used as a superconducting load, similar to real HTS magnet. The timing sequential control of two heaters and an electromagnet is an important factor to generate pumping- current in the Bi-2223 load. The thermal analysis of switching parts of the Bi-2223 solenoid according to the heater input was carried out. Based upon the analysis, the 0.8A of heater current were optimally derived. The maximum pumping current reached 1.7A.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2007.11a
• /
• pp.295-299
• /
• 2007

This paper presents the photovoltaic(PV) water pumping system with a maximum power point tracking(MPPT). The wale- pumping system uses a variable speed single phase induction motor(SPIM) driven a centrifugal pimp by field oriented control(FOC) inverter. The MPPT using a DC-DC converter controlled the duty cycle to track maximum power from PV under different insolation conditions. The duty cycle directly relate with a flux producing current control($i_{ds}$). The FOC inverter uses a current control voltage source inverter(CC-VSI). The simulation results are shown that the characteristics and performance of drive system, which varies as each conditions of light by expresses in voltage ($V_{dq}$), current($I_{dq}$), speed of motor and torque.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.7
• /
• pp.780-790
• /
• 1988

We have studied the hot-carrier-induced degradation caused by the high channel electric field due to the decrease of the gate length of MOSFET used in VLSI. Under DC stress, the condition in which maximum substrate current occures gave the worst degradation. Under AC dynamic stress, other conditions, the pulse shape and the falling rate, gave enormous effects on the degradation phenomena, especially at 77K. Threshold voltage, transconductance, channel conductance and gate current were measured and compared under various stress conditions. The threshold voltage was almost completely recovered by hot-injection stress as a reverse-stress. But, the transconductance was rapidly degraded under hot-hole injection and recovered by sequential hot-electron stress. The Si-SiO2 interface state density was analyzed by a charge pumping technique and the charge pumping current showed the same trend as the threshold voltage shift in degradation process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.2
• /
• pp.97-101
• /
• 2003

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

• Journal of Korea Water Resources Association
• /
• v.46 no.7
• /
• pp.719-733
• /
• 2013

In this study, a watershed-based surface-water and groundwater integrated model, SWAT-MODFLOW was used to evaluate streamflow depletion induced by groundwater withdrawals and irrigation reservoirs for the Juksan-cheon watershed in South Korea. The streamflow responses to groundwater pumping and irrigation reservoirs were simulated under several different scenarios. The scenarios were (1) current pumping well withdrawals with reservoirs; (2) current pumping well withdrawals without reservoirs; (3) no pumping well withdrawals with reservoirs; (4) no pumping well withdrawals without reservoirs (natural condition). The simulated results indicated that the effects of groundwater pumping on streamflow depletion are a little more significant than those of irrigation reservoirs. Particularly, the groundwater withdrawals with irrigation reservoirs at current status (scenario 1) has induced the decrease of more than 20% in drought flow against the natural condition (scenario 4) at the outlet of the watershed. The specific drought flows through the main stream of Juksan-cheon watershed were simulated in order to assess the irrigation effects on downstream flows. It was found out that the specific drought flows are increasing as the distance from the reservoir increases due to the accumulation of the return flows to stream.

• The Transactions of the Korean Institute of Electrical Engineers B
• /
• v.50 no.4
• /
• pp.164-169
• /
• 2001

This paper deals with comparison of characteristics of continuous-sheet type low-Tc superconducting (LTS) power supply and discrete-sheet type LTS power supply. These characteristics have been analyzed through experiments. These power supplies consist of two exciters, a rotor, a stator, and a LTS load. A continuous-sheet type has a single continuous niobium (Nb) sheet attached to the inner surface of on the stator. In the case of discrete-sheet type, four separated Nb sheets are used. this experiment is using 1.81 mH LTS magnet load and maximum 30 A dc exciter current. A discrete-sheet type is expected to produce much better pumping rate than a continuous-sheet type. The experimental observations have been compared with the theoretical predictions. In this experiment, the maximum pumping-current has reached about 926 A.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.10
• /
• pp.1899-1909
• /
• 2007

A cross-coupled charge pump with internal pumping capacitor, witch is advantages from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using a NMOS and a PMOS diode connected to boosting node from VIN node, the pumping node is precharged to the same value each pumping node at start pumping operation. Since the lust-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located the font side of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with conventional cross-coupled charge pump by using a stack-MIM capacitors. A proposed charge pump for TFT-LCD driver IC is designed with $0.13{\mu}m$ triple-well DDI process, fabricated, and tested.