• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1631-1633
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• 2001

In manufacturing processes, various and suitable pulse shapes are required for the purpose of material processing and the pulseshape is regarded as a dominant factor due to the specific property of processing materials. Therefore, in this study, a variable pulse width, high duty cycle Pulse Forming Network(PFN) is constructed by time sequently. The power supply for this experiment consists of three switching circuits. The PFN elements operate at low voltage and drive the primary of HV leakage transformer. The secondary of the transformer has a full-wave rectifier, which passes the pulse energy to the load in a continuous sequence of properly phased and nested increments. We investigated laser pulse width as various delay time among three switching circuit. As a result, we tan obtain various laser pulse width from about 4ms to 10ms. The maximum laser pulse width obtained at this experiment was about 10ms at delay time of 4ms among each switching circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.273-273
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• 2008

This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.13-16
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• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.219.1-219.1
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• 2014

전자소자 산업의 미세화 및 대형화에 따라 플라즈마 밀도, 전위, 온도, 균일도 등 과 같은 플라즈마 특성을 제어하는 것은 차세대 플라즈마 장치 개발에 있어 매우 중요한 요소라고 할 수 있다. 특히, 급격한 소자의 미세화에 따라 플라즈마 공정을 통해 발생할 수 있는 damage는 큰 issue가 되어 왔고, 많은 연구자들은 이를 해결하기 위해서 다각적인 노력을 진행해 왔다. 그중 높은 전자 온도는 높은 전자 에너지에 의해 공정 중 소자를 손상 시키는 주된 원인이라고 보고되고 있으며, 이에 대한 제어기술은 매우 중요하다고 할 수 있다. 본 연구에서는 서로 다른 두 개의 내/외측으로 나뉘어진 나선형 모양의 ICP 안테나를 이용 하여 연구를 진행하였다. 내측의 안테나에는 2 MHz를 연결 하였으며, 외측의 안테나에는 13.56 MHz를 연결 하였으며, 내/외측 안테나에 각각 pulse mode로 입력전력을 인가해 줌으로써 플라즈마의 특성을 관찰하였다. Pulse / CW (Continuous Wave) mode에 있어서 전자온도의 측정을 위해 emissive probe 를 이용하여 plasma potential과 floating potential을 측정하였으며, 이를 통하여 전자온도를 계산하여 구할 수 있었다. Duty ratio 및 pulsing frequency의 변화에 따른 전자온도의 변화를 확인 할 수 있었으며, 그에 따른 플라즈마 균일도를 ion saturation current를 측정함으로써 관찰할 수 있었다. 실제 식각 공정에 있어서 Pulsing 조건에 따른 식각 특성을 관찰하기 위해, SiO2, ACL (Amorphous Carbon Layer)에 대해 식각을 진행하였으며, 식각 메커니즘 분석을 위해 이온에너지 분포의 변화를 PSM (Plasma Sampling Mass-spectroscopy)을 이용하여 측정하였다.

• Journal of the Korean Society of Propulsion Engineers
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• v.12 no.3
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• pp.1-8
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• 2008

We present a model for simulating high energy laser heating of metal for ignition of energetic materials. The model considers effect of ablation of steel plate with long laser pulses and continuous lasers of several kilowatts and the thermal response of well-characterized high explosives for ignition. Since there is enough time for the thermal wave to propagate into the target and to create a region of hot spot in the high explosives, electron thermal diffusion of ultra-short (femto- and pico-second) lasing is ignored; instead, heat diffusion of absorbed laser energy in the solid target is modeled with thermal decomposition kinetic models of high explosives. Numerically simulated pulsed-laser heating of solid target and thermal explosion of RDX, TATB, and HMX are compared to experimental results. The experimental and numerical results are in good agreement.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2195-2197
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• 1999

Electric breakdown in the liquid produces a spark channel. The energy input into the channel causes expansion of a vapor gas cavity. If the power of the discharge is high enough, this expansion is fast enough to produce a shock wave which propagates through the liquid to the subject of destruction. We focused our attention on the correlation between electric parameters and the characteristics of the flash caused by point to-point electrode discharge in the water. By varying firing voltage and gap length, we obtained the features of the flash : amplitude, pulse width, and so on. In this paper, We have known that there is a concrete interrelation between underwater firing voltage and photodiode output.

• 전자공학회논문지 IE
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• v.44 no.1
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• pp.1-5
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• 2007

This experiment was analysed the discharge characteristics of FFL(flat fluorescent lamp). FFL is operated by sine and pulse wave source. We use FFL which has the electrodes covered with dielectric, observed the discharge characteristics of FFL by V-Q Lissajous' figure. When FFL is operated with pulsed, the discharge current flows after the applied voltage is risen. When the duty ratio increases, the number of metastable xenon atoms seem to increase. Consequently, the 172nm radiation becomes strong as the duty ratio increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.10-11
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• 2008

We developed the equipment palpating cell proliferation using a high brightness LED. This equipment was fabricated using a micro-controller and a high brightness LED, and designed to enable us to control light irradiation time, intensity, frequency and so on. Especially, to control the light irradiation frequency, FPGA was used, and to control the change of output value, TLC5941 was used. Control stage is divided into 30 levels by program. Consequently, the current value could be controlled by the change of level in Continue Wave(CW) and Pulse Width Modulation(PWM), and the output of a high brightness LED could be controlled stage by stage. And then, each experiment was performed to irradiation group and non-irradiation group for bone marrow cells. MIT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590nm transmittance of ELISA reader. As a result, the cell increase of bone marrow cells was verified in irradiation group as compared to non-irradiation group.

• Journal of the Korea Society of Computer and Information
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• v.3 no.4
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• pp.35-43
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• 1998

This study has been experimented the characteristics of synchronous oscillator for clock recovery of Direct Sequence/Spread Spectrum(DS/SS) communication. When external wave is not provided, The Synchronous Oscillator(SO) oscillates at its natural frequency. As soon as external signal is applied, the SO starts tracking the external frequency which can be sinusoidal, pulsed or some other waveform. Thus, the output is synchronized with the range of wide tracking bandwidth to the external frequency Specifically, the SO also posses frequency division and multiplication capability. All of these indicate that the SO can overcome difficulties to get synchronization in coherent digital communication systems. We make a practical application of DS/SS communication with study on the synchronous properties of SO. As the result, we have a good performance.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.1
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• pp.80-84
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• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.