• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.1-3
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• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1306-1308
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• 1998

Diamond like carbon(DLC) thin films possesed not only marvelous material charateristics such as large thermal conductivity, high hardness and being chemically inert, but also possesed negative electron affinity(NEA) properties. The NEA is an extremely desirable property of the material used in microelestronics and vacuum microelestronics device. DLC films were fabricated by pulsed laser deposition(PLD). The effect of the laser energy density and the substrate temperature on the properies of DLC films was investigated. The experiment was accomplished at temperatures in the range of room temperature to $400^{\circ}C$. The laser energy density was in the range of $6 J/cm^2$ to $16 J/cm^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.88-89
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• 2007

ZnO thin films were deposited on $Al_2O_3$ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355nm, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200m Torr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, $600^{\circ}C$. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased foil width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature ($700^{\circ}C$).

• 센서학회지
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• 제7권5호
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• pp.372-376
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• 1998

기능성 소자 응용을 위한 다양한 박막을 성장시키기 위하여 PLD(Pulsed Laser Deposition) 장치를 제작 개발하였다. 이 PLD 장치를 이용하여 $NbS_2$ 박막을 $Al_2O_3$(012) 기판과 Si(111) 기판 위에 성장시켰다. 결정성 박막의 성장조건을 조사하기 위하여 기판온도를 실온${\sim}600^{\circ}C$, 타겟의 성분비(S/Nb)를 $2.0{\sim}5.25$로 변화시켰다. XRD 패턴으로부터 기판온도가 $600^{\circ}C$이고 타겟의 성분비가 4.0일 때 c-축 배향을 나타내는 양호한 결정성의 $NbS_2$박막이 성장되었다. Si(111) 기판 위보다 $Al_2O_3$(012) 기판 위에서 보다 양질의 $NbS_2$ 박막이 성장되었음을 알 수 있었다.

• 한국세라믹학회지
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• 제50권6호
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• pp.551-556
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• 2013

AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

• 한국초전도ㆍ저온공학회논문지
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• 제20권4호
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• pp.41-45
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• 2018

We have investigated the effect of $Y_2O_3$ nanoparticles on the pinning properties of $Y_2O_3$-doped $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films. Both undoped and $Y_2O_3$-doped GdBCO films were grown on $CeO_2$-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (${\lambda}=248nm$) laser. The $Y_2O_3$ doping contents were controlled up to ~ 2.5 area% by varying the internal angles of $Y_2O_3$ sectors put on the top surface of GdBCO target. Compared with the $Gd_2O_3$-doped GdBCO films previously reported by our group [1], the $Y_2O_3$-doped GdBCO films exhibited less severe critical temperature ($T_c$) drop and thus slightly enhanced critical current densities ($J_c$) and pinning force densities ($F_p$) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field $J_c$ and $F_p$ values of all $Y_2O_3$-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that $Y_2O_3$ inclusions might act as effective pinning centers.

• 한국표면공학회지
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• 제29권5호
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• pp.430-436
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• 1996

We have grown superconducting thin films on various substrates using a pulsed laser deposition (PLD) method. $YBa_2Cu_3O_7-\delta$ (YBCO) superconducting thin films with the superconducting transition temperature ($T_{c. offset}$) of 87K were grown on Si substrates using yittria-stabilized zirconia (YSZ) and $CeO_2$ double buffer layers. We have developed a large area pulsed laser deposition system. The system was designed to deposit up to 6 different materials on a large area substrate up to 7.5cm in diameter without breaking a vacuum. The preliminary runs of the deposition of YBCO superconducting thin films on $SrTiO_3$ substrate using this system showed a very uniform thickness profile over the entire substrate holder area. $T_{c}$ of the deposited YBCO thin film, however, was scattered depending on the position and the highest value was 85K.

• 한국세라믹학회지
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• 제48권6호
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• pp.487-492
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• 2011

The effect of the application of lanthanum strontrium manganite and yttria-stabilized zirconia (LSM-YSZ) nano-composite fabricated by pulsed laser deposition (PLD) as a cathode of solid oxide fuel cell (SOFC) is studied. A gradient-structure thin-film cathode composed of 1 micron-thick LSM-YSZ deposited at an ambient pressure ($P_{amb}$) of 200 mTorr; 2 micron-thick LSM-YSZ deposited at a $P_{amb}$ of 300 mTorr; and 2 micron-thick lanthanum strontium cobaltite (LSC) current collecting layer was fabricated on an anode-supported SOFC with an ~8 micron-thick YSZ electrolyte. In comparison with a 1 micron-thick nano-structure single-phase LSM cathode fabricated by PLD, it was obviously effective to increase triple phase boundaries (TPB) over the whole thickness of the cathode layer by employing the composite and increasing the physical thickness of the cathode. Both polarization and ohmic resistances of the cell were significantly reduced and the power output of the cell was improved by a factor of 1.6.

• Journal of Magnetics
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• 제19권2호
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• pp.121-125
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• 2014

$CoFe_2O_4(CFO)/BaTiO_3(BTO)/CoFe_2O_4(CFO)$ multilayered thin films were deposited on $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition (PLD) system with KrF excimer laser (${\lambda}=248nm$). BTO, CFO, BTO/CFO and CFO/BTO/CFO structured thin films were prepared and their crystal structures and microstructures, as well as their magnetic and magneto-electrical properties, were studied. The C-V characteristics of these multilayered thin films with different capacitor structures were obtained to confirm the change in their capacitances under a magnetic field. Finally, the capacitance of the CFO/BTO/CFO thin film as a function of bias voltage under an in-plane magnetic field of 1,000 Oe increased to 951.04 pF at 1 MHz, from 831.90 pF measured under no magnetic field, indicating 14.3% increase in magnetocapacitance.